本論文主要是使用高溫爐管進行非晶氧化矽奈米線之合成，並涵蓋了其成長機制之探討及其陰極發光性質之研究兩大部分。對於氧化矽奈米線之合成，吾人使用晶面為(100)的單晶矽晶圓直接作為奈米線的固態來源，經由濺鍍一層約5奈米的白金觸媒層，在爐管中通入含10%氫氣的氬氣及1100°C高溫條件下，持溫5小時，來合成長度可達數百微米、直徑約40-60奈米的非晶氧化矽奈米線，經由電子顯微鏡、X光繞射…等多種分析方法來証明成長機制為固態－液態－固態機制。接著我們改良此成長機制為二階段成長法，包含第一階段的熱氧化在矽晶圓表面製作一層二氧化矽的薄膜，一樣鍍上白金觸媒之後，進入第二階段的高溫合成條件，在通入不同的氣氛下，此二階段合成法可大量成長平直或彎曲的氧化矽奈米線，並在短時間內(<2小時)即可成長出極厚的奈米線膜層，效率比傳統的固態－液態－固態機制高出許多。我們並使用化學分析電子能譜儀及紅外線光譜儀等儀器對其結構變化進行研究。第二部份，在陰極發光性質量測方面，我們分別針對單一根氧化矽奈米線及氧化矽奈米線組成之薄膜進行分析，發現奈米線的藍光發光強度比紅光發光強度高出20倍以上，與傳統塊材或是薄膜的二氧化矽發光性質極不相同，如此強烈的藍光強度是前所未見的，相信可以提供未來奈米光電元件上無窮潛力的應用。最後，我們比較純的氧化矽奈米線以及摻雜碳和錫的氧化矽奈米線之間陰極發光性質的差異，證明了摻雜對發光的影響，並可做為將來調變發光波段的開發與研究參考。

In this work, amorphous silicon oxide nanowires were successfully synthesized by a furnace and its growth mechanism and cathodoluminesce properties were well studied as well. For the synthesis, a Si(100) wafer is used as the solid source for the silicon oxide nanowire growth and the a sputtered platinum thin film ~ 5 nm is used as the catalyst. The growth is achieved under an atmosphere of a mixture of Ar gas with 10% H2 at temperature of 1100°C for 5 hrs. The product is amorphous SiOx nanowires with a diameter of ~40-60 nm and a length of ~hundreds of μm. The growth is confirmed as the solid-liquid-solid mechanism. Then we improved this SLS mechanism to a two-step growth method for a large scale of amorphous SiOx nanowire films. The two-step growth method introduces an oxidation process of the silicon wafer before the SLS growth. Two kinds of nanowires can be obtained by this method: for one is a thick amorphous SiOx nanowire film with smooth and straight nanowires inside and the other is a thinner film with curved and coarsening nanowires. The two-step growth method can provide higher efficiency and more flexibility than the traditional SLS mechanism. In the second part, the cathodoluminescence of these SiOx nanowires were characterized and an intense blue emission at ~2.73 eV was found out with an intensity of more than 20 times than the red emission at ~1.99 eV, which is very different from the bluk or thin film silica. This strong cathodoluminescence can have applications in the nano optoelectronics and in the fundamental research of mesoscopic science as well. At last, we have compared the difference in the cathodoluminescence of the pure and doped silica nanowires and the origin of the defects associating the luminescence were discussed. The manipulation of the doping elements can achieve the modification of the cathodoluminescence and thus provide potential applications in the optoelectronics devices in the future.

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