薄膜廣泛的應用在日常生活中。為了確保元件內的材料在長時間使用下的可靠度，薄膜機械性質的的得知便是十分的重要。然而當薄膜尺寸縮小時，其機械性質的量測是較為困難的。
鎳矽化物廣泛使用在積體電路來作為連接使用，降低元件中的接觸電阻與片電阻，以改善電路的效能。本實驗將利用鼓膜測試對鎳矽化物的機械性質做一系列的探討。鼓膜測試為一種量測薄膜機械性質的方法，量測方式為對一懸浮薄膜吹氣，記錄其壓力與鼓起高度的關係，藉由資料處理及曲線凝合，與Vlassak等人所推導公式對照之後，可求得薄膜的殘留應力、楊氏係數、浦松比。
實驗量測出Ni2Si、NiSi、NiSi2的楊氏係數分別為180±30、136±16、265±42 GPa。其中NiSi2的量測值與文獻上160GPa相差甚遠，仍須做進一步驗證。TEM與AES的分析結果均指出Ni2Si的試片製備有問題，其量測結果需在檢驗與探討。
鼓膜測試的準確性受到膜厚量測的準確性影響極大，本實驗薄膜厚度大約為20nm左右，受到粗糙度的影響，使得厚度的量測準確性受到影響，因此楊氏係數的誤差可大到10%以上。本實驗的量測方法在奈米尺度的薄膜仍有改善的空間。

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