本論文以溶膠－凝膠法所鍍製之PZT系統為主要研究對象，探討光源照光輔助的條件下作烘烤(baking)，對三種不同組成與結構之PZT薄膜的結晶行為及電性的影響，討論可能的作用機制。
實驗結果顯示，紫外光對數種不同PZT薄膜皆具有明顯影響。PZT(Z40)與PZT(Z52)薄膜之結晶方向及表面形貌明顯受UVC與UVA光照效應的影響，且極化值(2Pr)及介電常數獲得提升；PZT(Z60)薄膜只受UVC光照效應的作用，極化值(2Pr)及介電常數略為提升。
依據TGA、FTIR及UV-Vis.等分析結果與參考相關文獻資料，推測PZT薄膜特性受紫外光影響之主要原因，為溶膠－凝膠鍍膜製程中受紫外光光照效應可促進有機物的分解與揮發，影響薄膜之結晶優選方位及表面形貌，並進一步影響其電性表現。

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