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研究生: 張語涵
論文名稱: 硫化銦薄膜於CIGS太陽能電池之應用
The Application of In2S3 Thin Film on CIGS Solar Cell
指導教授: 賴志煌
口試委員: 莊佳智
侯惟仁
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年: 2012
畢業學年度: 100
語文別: 中文
論文頁數: 83
中文關鍵詞: 銅銦鎵硒太陽能電池緩衝層硫化銦硫化鋅表面改質退火
外文關鍵詞: Light soaking
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  • 銅銦鎵硒(CIGS)太陽能電池是目前所有薄膜型太陽能電池中最有潛力且效率高的一種電池。在CIGS太陽能電池中,通常以硫化鎘來當作電池的緩衝層,但因為鎘為一對環境及人體有嚴重傷害的物質,因此目前許多研究單位都致力於尋找一非鎘材料來取代CdS的位置,而目前在所有已開發的材料中,又以硫化鋅及硫化銦薄膜所做成的緩衝層效率最高。但許多文獻皆指出,利用硫化鋅薄膜做為緩衝層,其元件常有一嚴重的Light soaking效應,而此一現象也被廣泛探討;但在硫化銦薄膜元件方面,其元件是否有嚴重的light soaking的效應卻沒有一個論定,此外,對此元件的缺陷探討也沒有一個確切的定論。因此,在此篇論文中,首先會先探討硫化銦薄膜的基本特性,而後探討應用在CIGS上時其元件上的表現而後就其Light soaking和annealing前後的情況來探討元件的缺陷所在。最後,當我們對ZnS和In2S3- based buffer元件都有一了解後,我們利用一簡單快速的方法,可以大幅改善在ZnS-based buffer元件中嚴重Light soaking的現象。


    目錄 摘要 I ABSTRACT II 致謝 III 目錄 IV 圖目錄 VII 表目錄 IX 第一章 序論 1 1.1 太陽能電池簡介 1 1.2 太陽能電池原理 5 1.3 CIGS太陽能電池簡介 7 1.3.1 CIGS太陽能電池結構 7 1.3.2 CIGS太陽能電池發展 8 1.4 緩衝層 (BUFFER LAYER) 9 1.4.1 緩衝層簡介 9 1.4.2 緩衝層材料選擇 11 1.4.3 CBD製程 12 1.5 研究動機 14 第二章 文獻回顧 15 2.1 硫化銦薄膜 15 2.1.1 硫化銦薄膜的特點 15 2.1.2 硫化銦薄膜的發展 16 2.1.2.1 化學水浴法(CBD)鍍製硫化銦薄膜 17 2.1.3 硫化銦薄膜在CBD中的成長機制 19 2.2 硫化鋅薄膜 20 2.2.1 硫化鋅薄膜的特點 20 2.2.2 硫化鋅薄膜的發展 21 2.2.2.1 化學水浴法(CBD)鍍製硫化鋅薄膜 22 2.2.3 硫化鋅薄膜在CBD中的成長機制 25 2.3 LIGHT SOAKING EFFECT 27 2.4 退火效應(ANNEALING EFFECT) 27 2.5 載子複合機制(RECOMBINATION MECHANISM) 28 第三章 實驗方法與分析概述 30 3.1 實驗概述 30 3.2 實驗流程 30 3.2.1 製備硫化銦薄膜 30 3.2.1.1 於玻璃基板 30 3.2.1.2 於CIGS 31 3.2.2 利用In-S soaking將CIGS表面改質 32 3.3 分析技術 34 3.3.1 場發射掃描電子顯微鏡 (FE-SEM) 34 3.3.2 穿透光譜 (UV-Visible Spectroscope) 34 3.3.3 低略角結晶繞射 (Grazing-incident X-Ray Diffraction, GIXRD) 35 3.3.4 原子力顯微鏡 (Atomic Force Microscopy, AFM) 35 3.3.5 兩點(四點)探針電性量測系統 36 3.3.6 太陽光模擬器(Solar simulator) 36 3.3.7 外部量子轉效應量測儀 (External Quantum Efficiency,EQE) 36 3.3.8 感應耦合電漿原子發射光譜分析儀 (ICP-AES) 37 3.3.9 高解析電子能譜儀 (High resolution X-ray Photoelectron Spectrometer, HR-XPS) 37 3.3.10 光致螢光分析儀 (Photoluminescence, PL) 37 3.3.11 時間解析光致螢光分析儀 (Time-resolved photoluminescence) 38 第四章 結果與討論 39 4.1 硫化銦薄膜基本性質探討 39 4.1.1 表面形貌 39 4.1.2 AFM厚度量測 42 4.1.3 穿透光譜及能隙 43 4.1.4 結構分析 45 4.1.5 結論 46 4.2 硫化銦薄膜應用在CIGS太陽電池上的 元件分析 47 4.2.1 As deposited 47 4.2.2 Annealing effect 51 4.2.2.1 元件製作完成後進行退火 51 4.2.2.2 緩衝層製作完成後進行退火 53 4.2.2.3 結論 54 4.2.3 Light soaking effect 55 4.2.3.1 退火前進行light soaking 55 4.2.3.2 退火後進行light soaking 58 4.2.3.3 結論 61 4.3 利用硫化銦溶液將CIGS做表面改質並 應用於ZNS BUFFER上 62 4.3.1 I-V特性 62 4.3.2 結構分析 (GIXRD and Raman analysis) 66 4.3.3 表面形貌分析 (SEM analysis) 68 4.3.4 缺陷分析 (PL and TRPL analysis) 69 4.3.4 C-V特性 72 4.3.5 載子複合機制分析 (Temp. dependence of Voc) 73 4.3.6 Q.E.量測 75 4.3.7 結論 75 第五章結論 77 參考文獻 79

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