氧化鋅是目前被廣泛研究的一種半導體，由於其在大氣下穩定以及良好的載子傳輸能力等特性，我們將其應用於反式結構有機太陽能電池作為電子傳輸層。而我們沉積氧化鋅的方法為化學浴沉積法。此沉積法是ㄧ液像成膜技術，由於可以在常壓下大面積成膜，相當符合有機太陽能電池未來的發展趨勢。但ㄧ般而言，化學浴沉積的薄膜需要一道高溫退火的製程步驟，限制了其往軟性電子的發展性。本論文主要研究如何將化學浴沉積法應用於軟性有機太陽能電池上。我們使用的元件結構為ITO/ZnO/P3HT:PCBM/PEDOT/Ag，以P3HT混合PCBM製成塊材異質接面作為主動層。
我們使用80W/150sec的條件對氧化鋅進行微波處理，其表面有明顯的結晶出現但分布不均勻，應用於元件上效率僅到達0.69%。之後，我們改變製程步驟，使用低溫化學浴法沉積氧化鋅，成功沉積出有良好電子遷移率之薄膜，而所有製程步驟均在115°C以下。此方法製備的氧化鋅薄膜，在玻璃基板上元件效率可以達到3.29%。而在軟板上目前最佳的元件效率為1.6%。

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