本實驗調查不同薄膜厚度和退火時間對鎳矽化物的形成的影響。
在 Ni (30 nm) / (001) Si退火 700 ℃ 60 秒 以後的樣品中發現NiSi和磊晶的NiSi2同時存在。雖然矽化物的表面覆蓋率達100％，但觀測到大小約為 0.1 - 0.5毫米的孔洞，這些孔洞主要分佈在NiSi的區域內。在經過750 - 850 ℃退火後，只有NiSi2存在。此時並無孔洞存在。

在 Ni (30 nm) / (001) Si退火 700 ℃ 5 秒 以後的樣品中發現NiSi和磊晶的NiSi2同時存在。雖然矽化物的表面覆蓋率達100％，但觀測到大小約為 0.1 - 0.5毫米的孔洞，這些孔洞主要分佈在NiSi的區域內。在經過750 - 850 ℃退火後，只有NiSi2存在。此時並無孔洞存在。

在 Ni (5 nm) / (001) Si退火 700 ℃ 60 秒 以後的樣品中發現NiSi和磊晶的NiSi2同時存在。雖然矽化物的表面覆蓋率達100％，但觀測到大小約為 0.1 - 0.5毫米的孔洞，這些孔洞主要分佈在NiSi的區域內。在經過750 - 850 ℃退火後，只有NiSi2存在。此時並無孔洞存在。

討論了孔洞形成的可能機制。 發現比NiSi較低密度和較高熱膨脹係數的NiSi2的部分轉換(NiSi和NiSi2共存)會造成更粗糙的表面，並同時有孔洞的發生。

The effects of different film thickness and annealing time on the formation of nickel silicides in nickel thin film on silicon have been investigated.
NiSi and epitaxial NiSi2 were found to form in Ni (30 nm) / (001) Si samples after annealing at 700 ℃ for 60 sec. Although the surface coverage of silicides (NiSi and epitaxial NiSi2) on silicon was almost 100%, pinholes, 0.1 - 0.5 μm in size, were observed. The pinholes were found to distribute mostly in the NiSi regions. After 750 - 850 ℃ annealing, epitaxial NiSi2 with {111} facets was the only silicide phase present. Almost full surface coverage of epitaxial NiSi2 was found. Pinholes were seldom observed.

NiSi and epitaxial NiSi2 were found to form in Ni (30 nm) / (001) Si samples after annealing at 700 ℃ for 5 sec. Pinholes, 0.1 - 0.3 μm in size, were observed. The pinholes were found to distribute mostly in the NiSi2 regions. After 750 - 850 ℃ annealing, epitaxial NiSi2 was the only silicide phase present. Pinholes were seldom observed.

Only epitaxial NiSi2 was found to form in Ni (5 nm) / (001) Si samples after annealing at 700 ℃ for 5 sec. Pinholes, about 0.1 μm in size, were observed. Pinholes, 0.1 - 0.3 μm, were also observed in 750 ℃ annealed samples. After 700 - 850 ℃ annealing, epitaxial NiSi2 was the only silicide phase present. Almost full surface coverage of epitaxial NiSi2 was found. Pinholes were seldom observed

Possible mechanisms for the formation of pinholes are discussed. Partial transformation of epitaxial NiSi2 with lower density and higher thermal expansion compared with those of NiSi in the silicide film was found to cause significantly rougher surface with the occurrence of pinholes.

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