本晶片旨在以陣列式金電極構成可區域性給予電刺激的生物實驗平台，成功展示以具有高輸出電流的Class AB buffer做為對於金電極/培養液之間的阻抗之驅動。透過適當的封裝，實現培養液中之量測並且培養細胞於晶片上，並由量測之結果證明電訊號可順利至PC12細胞上。而在電刺激PC12細胞的實驗方面，使用透明之玻璃基板輔以ITO電極做為測試晶片以驗證電刺激的效果。可發現以100 ng/ml之神經生長因子處理之PC12，在受到強度100 mV，頻率100 Hz的雙相(biphasic)訊號刺激時，其神經線的延伸有明顯的增加。由其在剛開始分化神經線上約有10%的差異。另一方面，我們亦透過西方墨點法驗證，受到電刺激的PC12在此信號通道中之ERK磷酸化的情形為無電刺激的1.4倍，此結果指出電會刺激NGF所誘導的ERK磷酸化情形上升，暗示電刺激可能加強神經線之生長。

The chip is designed to realize a platform which is an array of gold electrodes that could provide local electrical stimulation of biological cells for enhancing growth. A Class AB buffer with a high output current is utilized as a driver of the interfacial impedance between gold electrodes and medium. In order to achieve the measurement in medium and cells culture on the CMOS MEMS chip, we also designed a special package method. Rectangular pulse wave potentials were applied to the electrode at amplitudes of 50mV and 100 mV with a frequency of 100Hz. PC12 cells cultured on an indium-tin oxide (ITO) electrode has been shown to grow longer neurites with an enhanced initial growth rate in the existence of nerve growth factor (NGF) and electrical stimulation, especially at the amplitudes of 100 mV. And the result of Western Blot also implied that electrical stimulation will affect the neurite growth of PC12, because the phosphorylation of ERK1/2 after NGF treatment increased under the treatment of electrical stimulation.

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