二硫化鎢/二硒化鎢單層側向異質結構的製備與特性

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研究生：	李承翰 Lee, Cheng-Han
論文名稱：	二硫化鎢/二硒化鎢單層側向異質結構的製備與特性 Synthesis and Characterization of Monolayer WS2-WSe2 Lateral Heterostructures
指導教授：	呂明諺 Lu, Ming-Yen
口試委員:	呂明霈 Lu, Ming-Pei 張育誠 Chang, Yu-Cheng
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2018
畢業學年度：	106
語文別：	中文
論文頁數：	64
中文關鍵詞：	二維材料、二硫化鎢、二硒化鎢、異質材料、低壓化學氣相沉積法
外文關鍵詞：	two-dimensional materials, WS2, WSe2, Heterostructures, LPCVD
相關次數：	點閱：2 下載：0
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本研究旨在利用的低壓化學氣相沉積法爐管配置，藉此控制蒸氣首先成長出二硫化鎢與二硒化鎢兩者單層結晶，接著利用二階段法合成出WS2-WSe2與WSe2-WS2兩個內外層相反之N-P與P-N側向異質結構，從光學顯微鏡上可看到兩者對比的差異，並透過拉曼、PL與原子力顯微鏡確定兩者皆為單層材料。同時我們觀察異質結構的界面，發現角落處發生拉曼與PL強度的變化，現象類似於因應力擠壓造成結晶性的改變，交叉比對後發現此現象只存在於異質結構上，因此判斷出此改變是在二階段成長中發生的。最後我們使用濕式轉印法將材料移到已預鍍電極的二氧化矽基板上，並使用電子束微影定位量測其基本電子特性。

In this research, we developed a modified furnace configuration to control vapor during the chemical vapor deposition(CVD) process. By this idea, we first synthesized WS2 and WSe2 single layer crystal on sapphire substrate and followed by an epitaxial growth of WSe2 and WS2 on the edge with two-step CVD to get WS2/WSe2 and WSe2/WS2 two different lateral junctions. We can see the color contrast between them from optical microscope image, and confirmed the single layer charteristic by Raman、PL and AFM analysis. Furthermore, we discovered the different of Raman peak intensity between corner and edge in the outer region of lateral junction and concluded this phenomenon which caused by the decrease of crystallinity occurred only during the second step CVD.

目錄……………………………………………………………1
圖目錄…………………………………………………………4
表目錄…………………………………………………………8
摘要……………………………………………………………9
Abstract…………………………………………...………….10
致謝……………………………………………………….…..11
第一章    緒論與文獻回顧………………………………….11
1-1二維材料( 2D material )…………………………………12
1-1-1 二硫化鎢( WS2 )與二硒化鎢 ( WSe2 )……..……...13
1-2二維異質結構的種類…………………………………….15
1-2-1 側向磊晶(Lateral epitaxy)異質結構………………15
1-2-2 垂直堆疊(Vertical stacking)異質結構…………….16
1-3過渡金屬二硫族化合物(TMDs)異質材料的合成方式...18
1-3-1 機械堆疊法(Mechanical stacking)……………...…18
1-3-2 直接硫化法(Sulfurization)………………………....19
1-3-3 化學氣相沉積法(Chemical Vapor Deposition,
CVD)……………………………………………….20
1-3-3-1 單階段成長法(Single-step growth)…………...21
1-3-3-2 多階段成長法(Multi-step growth)……………22
1-4二維異質材料的應用…………………………………….24
1-4-1 太陽能電池(Solar cells)…………………………….24
1-4-2 記憶體(Memory)………………...…………………25
1-4-3 光感測器(Photodetector)…………………………..26
1-5 研究動機………………………………………...……….29
第二章    實驗步驟…………………...……………………..30
2-1化學氣相沉積成長WS2/WSe2異質結構……….………31
2-2濕式轉印( Transfer )……………………………………..33
2-3電子束微影（Electron beam lithography）…………...34
2-4儀器使用介紹…………………………………………….36
2-4-1 三區真空爐管(Three-zone vacuum furnace)……..36
2-4-2 光學顯微鏡(Optical Microscope, OM)……………37
2-4-3 µ-拉曼頻譜儀( µ-Raman spectroscope )………..….38
2-4-4光激發螢光頻譜( Photoluminescence, PL )……….39
2-4-5原子力顯微鏡(Atomic Force Microscope, AFM)…40
2-4-6 掃描式電子顯微鏡(Scanning Electronic
Microscope, SEM)…………………………………41
2-4-7 電子束微影系統(Electron beam lithography)……42
2-4-8 電子槍真空蒸鍍系統( Electron gun)…….……..43
2-4-9電性量測系統(Electrical measurement system)..44
第三章    結果與討論……………………………………….45
3-1化學氣相沉積成長WS2與WSe2………...……………..45
3-1-1 WS2特性探討……………………………………….45
3-1-2 WSe2特性探討…………………..………………….47
3-1-3 無檔板之成長結果………………………………….49
3-2 二階段成長WS2/WSe2異質結構………………..……...50
3-2-1 WS2-WSe2異質結構………………………………...50
3-2-2 WSe2-WS2異質結構………………………………...54
3-3 異質結構界面分析………………………………………56
3-4 電性分析…………………………………………………58
第四章 結論………………………………………………….60
第五章 未來展望…………………………………………….61
參考文獻……………………………………………………...62

                                

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