簡易檢索 / 詳目顯示

研究生: 衛 星
Singh, Somnath
論文名稱: 用於振動監測系統模組之氮化鋁微機電加速度計與介面電路設計及實作
AlN-MEMS Accelerometer and Interface Circuit Design for Vibration Monitoring System Module
指導教授: 李昇憲
Li, Sheng-Shian
口試委員: 方維倫
Fang, Wei-Leun
盧向成
Lu, Shiang-Cheng
梁凱智
Liang, Kai-Chih
學位類別: 碩士
Master
系所名稱: 工學院 - 奈米工程與微系統研究所
Institute of NanoEngineering and MicroSystems
論文出版年: 2023
畢業學年度: 111
語文別: 英文
論文頁數: 174
中文關鍵詞: 三軸危機電加速度計氮化鋁 (AlN) 壓電材料錐形樑設計傳統設計半圓形切割梁設計膜型設計溝槽膜型設計電壓放大器電荷放大器差分放大器三階低通濾波器TINA 軟件PCB 設計PCB 表面漏電流保護環Altium 設計軟件系統級開發STM32Cortex-M3嵌入式編程VMS 模塊
外文關鍵詞: 3-axis MEMS Accelerometer, Aluminum Nitride (AlN) Piezoelectric Material, Tapered Beam Design, Conventional Design, Semicircular Cut Beam Design, Membrane Type Design, Trench-Membrane Type Design, Voltage Amplifier, Charge Amplifier, Differential Amplifier, 3rd-Order Lowpass Filter, TINA Software, PCB Design, PCB Surface Leakage Current, Guard Ring, Altium Design Software, System Level Development, STM32, Cortex-M3, Embedded Programming, VMS-Module
相關次數: 點閱:2下載:0
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • 隨著工業 4.0 的蓬勃發展,機台預測性維護的需求大幅增長。預測性維護中,振動監測系統是一種用於測量一個或多個參數以識別機台老化的工具。本研究展示振動監測系統模塊的開發過程,該模組包括一個三軸微機電加速度計、讀取電路、嵌入式微控制器。加速度計部分,本文共提出了六種不同的彎曲型壓電 (氮化鋁) 微機電加速計結構。本研究主要使用兩種類型的晶圓(10 µm-SOI 晶圓和 3 µm-SOI 晶圓),並利用COMSOL進行模擬並分析元件模態。其中結構設計包括50% - 錐形懸臂樑設計、75% - 錐形懸臂樑設計、傳統設計(較小中心質量塊)、傳統設計(較大中心質量塊)、半圓切割梁設計、薄膜型設計,薄膜溝槽設計。另外,本研究也會討論使用電極串聯而不是傳統並聯的優點。此次研究也聚焦在低頻電路的設計與開發,低頻電路帶寬範圍為 5 Hz 至 5 kHz。文中會根據兩種電路架構(電荷感測和電壓感測)進行研究及推導,並分析兩者的優點和缺點,透過疊接放大以實現更高的增益。此研究使用TINA軟體進行電路模擬並選擇適合之主動與被動元件。適合此類設計的 IC 也根據其特性列在表中進行比較。本次研究也會對電路板設計與開發進行討論。電路設計透過導入保護環的方式可控制電路板的漏電流,相關原理也會在此研究進行探討。至於電路板設計、焊接、測試之注意事項也會在文中討論,並對每一版本模組進行檢討與修改。電路量測的部分分別使用示波器和 Lock-In實現足夠的增益和平坦的增益帶寬以驗證電路的功能性。三軸壓電氮化鋁加速規則是利用雷射都普勒分析儀(LDV)進行模態分析。振動監測模組開發包含三個不同領域: 微機電加速計、讀取電路以及微控制器。系統特性利用震動儀進行分析,並使用頻譜分析儀研究其雜訊性能。


    The need for machine predictive maintenance has grown substantially as Industry 4.0 thrives. As part of preventive maintenance, a vibration monitoring system is a tool for measuring one or more parameters to identify changes as machinery ages. This work demonstrates a system-level approach to develop a Vibration-Monitoring-System Module which includes a 3-axis MEMS accelerometer, Readout Circuit, Embedded programming and interface with the microcontroller. For 3-axis MEMS accelerometer, six different accelerometer designs of bending type piezoelectric (AlN) MEMS are proposed. Using two different types of wafer (10 µm-SOI wafer and 3 µm-SOI wafer), a detailed COMSOL simulations and studies of mode shapes are carried out for 50%-Tapered beam design, 75%-Tapered beam design, Conventional Design with smaller proof-mass, Conventional Design with bigger proof-mass, Semi-Circular-cut beam design, Membrane type, Trench-Membrane type. The derivations and benefits from the use of a series connection of electrodes rather than the traditional parallel connection is also discussed thoroughly. It also focuses on the design and development of interface circuits for low frequency circuits design with bandwidths ranging from 5 Hz to 5 kHz. The two topologies (charge sensing and voltage sensing) are widely researched, along with their respective derivations. The benefits and drawbacks of these two are also thoroughly discussed. Cascaded amplification of various types is also covered to achieve higher gain. TINA software is used for simulation to design and select active and passive circuit components. Best suitable IC for such design is also listed in the table depending upon their properties. It also talks about PCB design and development for Interface Circuits. The use of a Guard Ring to control the PCB leakage current is also explained in detail. Precautions are also noted down while designing, soldering, and testing the PCB. The failure of PCBs and the lessons learned from each version are also discussed. The circuit measurement is performed to ensure that the circuit is functioning properly in order to achieve the desired gain and flat mid gain bandwidth, using an oscilloscope and Lock-In, respectively. The mode shapes of the 3-axis AlN-MEMS accelerometer is verified using Laser Doppler Vibrometer (LDV). A Vibration-Monitoring-System module is also developed by combining all the three different areas (MEMS accelerometer, readout circuit, and MUC). And it is characterized using Shaker System and Noise performance is studies using Spectrum Analyzer.

    ABSTRACT 摘要 Chapter 1. Introduction----------------------------------------------1 1.1 Background, Motivation and Introduction--------------------------1 1.2 Vibration Monitoring Systems (VMS) Module------------------------5 1.3 Faults Identified Through Vibration Analysis Techniques----------6 1.4 Thesis Overview--------------------------------------------------8 Chapter 2. PIEZOELECTRIC (AIN) MEMS ACCELEROMETER-------------------10 2.1 Basic Principle of Piezoelectricity Effect----------------------10 2.1.1 Piezoelectric Coupling Coefficient(d)-------------------------11 2.1.2 Dielectric Parameter: Permittivity----------------------------12 2.1.3 Elastic Stiffness Constant and Elastic Compliance Constant Parameter-----------------------------------------------------------12 2.2 Independent Components of Piezoelectric, Dielectric, and Elastic Matrices------------------------------------------------------------13 2.3 The Basic Terminology of Accelerometer--------------------------14 2.3.1 Sensitivity---------------------------------------------------14 2.3.2 Frequency Response and Bandwidth------------------------------14 2.3.3 Dynamic Range-------------------------------------------------15 2.3.4 Full-Scale Range----------------------------------------------15 2.3.5 Noise---------------------------------------------------------16 2.3.6 Noise Floor---------------------------------------------------16 2.3.7 Noise Density-------------------------------------------------16 2.3.8 Minimum Detectable Signal (MDS)-------------------------------17 2.4 Principal of Piezoelectric Accelerometer------------------------17 2.4.1 Benefits of Piezoelectric Accelerometers----------------------18 2.5 Modelling of MEMS Accelerometer---------------------------------18 2.5.1 Simulation Settings-------------------------------------------20 2.5.2 SOI Wafer Description-----------------------------------------21 2.5.3 Design Consideration------------------------------------------21 2.6 Piezoelectric (AlN) MEMS Accelerometer Designs------------------22 2.6.1 50%-Tapered Beam Design and Working Principal of 3-axis Accelerometer-------------------------------------------------------22 2.6.2 Series Connection of Electrodes-------------------------------27 2.6.3 Parallel Connection of Electrodes-----------------------------29 2.6.4 75%-Tapered Beam Design---------------------------------------32 2.6.5 Conventional Design-------------------------------------------37 2.6.6 Semi-Circular-Cut Beam Design---------------------------------46 2.6.7 Trench-Membrane Type Design-----------------------------------52 2.6.8 Membrane Type Design------------------------------------------57 2.7 Summary of the AlN-MEMS Design----------------------------------61 2.8 In-House AlN Fabrication Process Flow---------------------------63 2.8.1 Layouts-------------------------------------------------------65 2.8.2 Optical Image of all the MEMS-Accelerometer Designs-----------68 Chapter 3. INTERFACE CIRCUIT----------------------------------------72 3.1 Charge and Voltage Sensitivity of an Accelerometer--------------72 3.2 Charge Amplifier------------------------------------------------74 3.2.1 Charge Attenuation due to Input Cable Capacitance-------------80 3.2.2 Gain of a Charge Amplifier------------------------------------81 3.2.3 Noise in Charge Amplifier-------------------------------------81 3.3 Voltage Amplifier-----------------------------------------------82 3.3.1 Noise in a Voltage Amplifier----------------------------------86 3.3.2 Gain of a Voltage Amplifier-----------------------------------87 3.4 Phase Shift for Charge and Voltage Amplifier--------------------87 3.5 Op-Amp based Single Supply Preamplifiers------------------------90 3.5.1 Basic Charge Amplifier----------------------------------------90 3.5.2 Voltage Amplifier---------------------------------------------90 3.6 Voltage Amplifier over Charge Amplifier-------------------------91 3.7 Comparative Study of Best Suitable ICs--------------------------92 3.8 Cascading of Different Stage of Amplifiers----------------------94 3.9 PCB Surface Leakage Current-------------------------------------95 3.9.1 Guard Ring----------------------------------------------------96 3.10 Guard Ring creation using Altium PCB Design Software----------100 3.10.1 Steps to Layout the Guard Ring on PCB using Altium Design Software-----------------------------------------------------------101 3.11 PCB Design/Layout Guideline-----------------------------------105 3.12 Importance of ENIG finished PCB-------------------------------113 3.13 PCB Soldering and Testing Precautions-------------------------115 3.14 Lesson Learn from the Failure of the PCB----------------------120 3.15 Circuit Simulation and Measurements Results-------------------131 3.15.1 Voltage Amplifier-------------------------------------------131 3.15.2 Oscilloscope Measurement of Voltage Amplifier---------------134 3.15.3 Lock-In Measurement of Voltage Amplifier--------------------135 3.15.4 Differential Amplifier-Second Stage Amplification-----------135 3.15.5 Oscilloscope Measurement of Differential Amplifier----------138 3.15.6 Lock-In Measurement of Differential Amplifier---------------138 3.15.7 3rd Order Low Pass Filter-Third Stage Amplification---------139 3.15.8 Oscilloscope Measurement of 3rd order Lowpass Filter--------140 3.15.9 Lock-In Measurement of 3rd order Lowpass Filter-------------141 3.16 Cascaded Circuit with Voltage Amplifier as the First Stage----142 3.17 Cascaded Circuit with Charge Amplifier as the First Stage-----144 3.18 Summary-------------------------------------------------------145 Chapter 4. MEASUREMENTS & RESULTS for VMS-Module-------------------146 4.1 Simplified Block Diagram of LDV Measurement Setup--------------146 4.1.1 LDV Response of 50%-Tapered Beam Design (Parallel connection of Electrodes)--------------------------------------------------------146 4.1.2 LDV Response of 50%-Tapered Beam Design (Series connection of Electrodes)--------------------------------------------------------149 4.1.3 LDV Response of 75%-Tapered Beam Design (Parallel connection of Electrodes)--------------------------------------------------------151 4.1.4 LDV Response of 75%-Tapered Beam Design (Series connection of Electrodes)--------------------------------------------------------153 4.2 Measurement Setup for Shaker System----------------------------155 4.3 Measurement Setup for Spectrum Analyzer------------------------160 4.4 Block Diagram of VMS Module------------------------------------162 4.4.1 Simplified Block Diagram of VMS-Module-----------------------162 Chapter 5. SUMMARY & FUTURE WORK-----------------------------------166 5.1 Conclusion-----------------------------------------------------166 5.2 Future Work----------------------------------------------------167 5.2.1 LDV Measurement for 3 µm-SOI Wafer Design--------------------167 5.2.2 Improved Charge Amplifier------------------------------------167 5.2.3 MEMS Sensitivity Measurement for Series Connected Electrode--168 5.2.4 VMS-Module---------------------------------------------------169 BIBLIOGRAPHY-------------------------------------------------------170

    1. J. A. Plaza, A. Collado, E. Cabruja, and J. Esteve, "Piezoresistive accelerometers for MCM package," Journal of Microelectromechanical Systems, vol. 11, no. 6, pp. 794-801, 2002, doi: 10.1109/JMEMS.2002.805213.

    2. S. A. Prasad et al., "Analytical electroacoustic model of a piezoelectric composite circular plate," AIAA journal, vol. 44, no. 10, pp. 2311-2318, 2006.

    3. A. Smeti, W. Chagra, and M. Ksouri, "Implementation of a Predictive controller on the STM32 board," 2013 International Conference on Control, Decision and Information Technologies (CoDIT), pp. 250-253, 2013.

    4. S. Thanagasundram and F. S. Schlindwein, "Comparison of integrated micro-electrical-mechanical system and piezoelectric accelerometers for machine condition monitoring," Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science, vol. 220, no. 8, pp. 1135-1146, 2006/08/01 2006, doi: 10.1243/09544062C07405.

    5. N. Yazdi, F. Ayazi, and K. Najafi, "Micromachined inertial sensors," Proceedings of the IEEE, vol. 86, no. 8, pp. 1640-1659, 1998, doi: 10.1109/5.704269.

    6. P. Scheeper, J. O. Gulløv, and L. M. Kofoed, "A piezoelectric triaxial accelerometer," Journal of Micromechanics and Microengineering, vol. 6, no. 1, p. 131, 1996.

    7. I. Koene, R. Viitala, and P. Kuosmanen, "Internet of things based monitoring of large rotor vibration with a microelectromechanical systems accelerometer," IEEE Access, vol. 7, pp. 92210-92219, 2019.

    8. J.-M. Tsai, I. Sun, and K.-S. Chen, "Realization and performance evaluation of a machine tool vibration monitoring module by multiple MEMS accelerometer integrations," The International Journal of Advanced Manufacturing Technology, vol. 114, no. 1, pp. 465-479, 2021.

    9. M. O. Reze, M., "MEMS sensors for automotive vehicle stability control applications. In MEMS for Automotive and Aerospace Applications; Woodhead," pp. pp. 29–53, UK, 2013.

    10. R. Mukhiya et al., "Design, modelling and system level simulations of DRIE-based MEMS differential capacitive accelerometer," Microsystem technologies, vol. 25, no. 9, pp. 3521-3532, 2019.

    11. G. Pang and H. Liu, "Evaluation of a low-cost MEMS accelerometer for distance measurement," Journal of Intelligent and Robotic Systems, vol. 30, no. 3, pp. 249-265, 2001.

    12. H. Sheng and T. Zhang, "MEMS-based low-cost strap-down AHRS research," Measurement, vol. 59, pp. 63-72, 2015.

    13. M. Y. Chao, A. Ali, S. Ghosh, and J. E.-Y. Lee, "An aluminum nitride on silicon resonant MEMS accelerometer operating in ambient pressure," in 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2017: IEEE, pp. 607-610.

    14. C. Ai, X. Zhao, S. Li, Y. Li, Y. Bai, and D. Wen, "Fabrication and characteristic of a double piezoelectric layer acceleration sensor based on Li-doped ZnO thin film," Micromachines (Basel), vol. 10, no. 5, p. 331, 2019.

    15. K. Ramany et al., "Experimental study of different vanadium dopant concentrations in ZnO nanorods for a low frequency piezoelectric accelerometer," Journal of Electronic Materials, vol. 48, no. 8, pp. 5310-5322, 2019.

    16. A. L. Gesing, Z. N. Masson, D. C. Arellano, F. Alves, S. Paul, and J. A. Cordioli, "Middle ear ossicular chain vibration detection by means of an optimized MEMS piezoelectric accelerometer," IEEE Sensors Journal, vol. 19, no. 6, pp. 2079-2086, 2018.

    17. N. Gupta, A. Pandey, S. R. K. Vanjari, and S. Dutta, "Influence of residual stress on performance of AlN thin film based piezoelectric MEMS accelerometer structure," Microsystem Technologies, vol. 25, no. 10, pp. 3959-3967, 2019.

    18. M.-h. Xu et al., "Design and fabrication of a D33-mode piezoelectric micro-accelerometer," Microsystem Technologies, vol. 25, no. 12, pp. 4465-4474, 2019.

    19. C. Fei et al., "AlN piezoelectric thin films for energy harvesting and acoustic devices," Nano Energy, vol. 51, pp. 146-161, 2018.

    20. F. Gerfers, M. Kohlstadt, H. Bar, M.-Y. He, Y. Manoli, and L.-P. Wang, "Sub-μg ultra-low-noise MEMS accelerometers based on CMOS-compatible piezoelectric AlN thin films," in TRANSDUCERS 2007-2007 International Solid-State Sensors, Actuators and Microsystems Conference, 2007: IEEE, pp. 1191-1194.

    21. M. Akiyama, K. Kano, and A. Teshigahara, "Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films," Applied Physics Letters, vol. 95, no. 16, p. 162107, 2009.

    22. M. Akiyama, T. Kamohara, K. Kano, A. Teshigahara, Y. Takeuchi, and N. Kawahara, "Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering," Advanced Materials, vol. 21, no. 5, pp. 593-596, 2009.

    23. P. Mayrhofer et al., "ScAlN MEMS cantilevers for vibrational energy harvesting purposes," Journal of Microelectromechanical Systems, vol. 26, no. 1, pp. 102-112, 2016.

    24. A. Kovacs and Z. Vı́zváry, "Structural parameter sensitivity analysis of cantilever-and bridge-type accelerometers," Sensors and Actuators A: Physical, vol. 89, no. 3, pp. 197-205, 2001.

    25. M. Tahmasebipour and A. Vafaie, "A highly sensitive three axis piezoelectric microaccelerometer for high bandwidth applications," Micro and Nanosystems, vol. 9, no. 2, pp. 111-120, 2017.

    26. Q.-M. Wang, Z. Yang, F. Li, and P. Smolinski, "Analysis of thin film piezoelectric microaccelerometer using analytical and finite element modeling," Sensors and Actuators A: Physical, vol. 113, no. 1, pp. 1-11, 2004/06/15/ 2004, doi: https://doi.org/10.1016/j.sna.2004.02.041.

    27. R. Mukhiya, R. Gopal, B. Pant, V. Khanna, and T. Bhattacharyya, "Design, modeling and FEM-based simulations of a 1-DoF MEMS bulk micromachined piezoresistive accelerometer," Microsystem Technologies, vol. 21, no. 10, pp. 2241-2258, 2015.

    28. D. L. Devoe and A. P. Pisano, "Surface micromachined piezoelectric accelerometers (PiXLs)," Journal of Microelectromechanical Systems, vol. 10, no. 2, pp. 180-186, 2001.

    29. Q. Zou, W. Tan, E. S. Kim, and G. E. Loeb, "Single-and triaxis piezoelectric-bimorph accelerometers," Journal of Microelectromechanical Systems, vol. 17, no. 1, pp. 45-57, 2008.

    30. M.-h. Xu, J.-y. Wang, R.-h. Han, H. Zhou, and H. Guo, "Analytical and finite element analysis of a new tri-axial piezoelectric accelerometer," in 2016 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA), IEEE, pp. 71-75,2016.

    31. B. Tian, H. Liu, N. Yang, Y. Zhao, and Z. Jiang, "Design of a piezoelectric accelerometer with high sensitivity and low transverse effect," Sensors, vol. 16, no. 10, p. 1587, 2016.

    32. H. Yang and H. Guo, "P6H-8 Design of a Bulk-Micromachined Piezoelectric Accelerometer," in 2007 IEEE Ultrasonics Symposium Proceedings,IEEE, pp. 2598-2601, 2007.

    33. D. Eichner, M. Giousouf, and W. von Münch, "Measurements on micromachined silicon accelerometers with piezoelectric sensor action," Sensors and Actuators A: Physical, vol. 76, no. 1-3, pp. 247-252, 1999.

    34. H. G. Yu, L. Zou, K. Deng, R. Wolf, S. Tadigadapa, and S. Trolier-McKinstry, "Lead zirconate titanate MEMS accelerometer using interdigitated electrodes," Sensors and Actuators A: Physical, vol. 107, no. 1, pp. 26-35, 2003.

    35. Q. Zou, W. Tan, E. S. Kim, and G. E. Loeb, "Highly symmetric tri-axis piezoelectric bimorph accelerometer," in 17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest, 2004: IEEE, pp. 197-200.

    36. J. Chae, H. Kulah, and K. Najafi, "A monolithic three-axis silicon capacitive accelerometer with micro-g resolution," in TRANSDUCERS'03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No. 03TH8664), 2003, vol. 1: IEEE, pp. 81-84.

    37. J.-C. Yu and C.-B. Lan, "System modeling of microaccelerometer using piezoelectric thin films," Sensors and Actuators A: Physical, vol. 88, no. 2, pp. 178-186, 2001/02/15/ 2001, doi: https://doi.org/10.1016/S0924-4247(00)00502-1.

    38. T. Gomathi and M. Shaby, "Comparative Analysis Of MEMS Piezoelectric Energy Harvesters Capacitive Pressure Sensor Based On The Mechanical Vibrations Using Different Materials," European Journal of Molecular & Clinical Medicine, vol. 7, no. 03, p. 2020, 2020.

    39. K. Kanda, Y. Iga, T. Hashimoto, T. Fujita, K. Higuchi, and K. Maenaka, "Microfabrication and application of series-connected PZT elements," Procedia Chemistry, vol. 1, no. 1, pp. 808-811, 2009.

    40. A. S. Shaik and I. M. Mirzana, "Stress concentration of rectangular plate with a hole made with composite material using finite element analysis," IOSR J Mech Civil Eng, vol. 13, no. 4, pp. 2278-1684, 2016.

    41. N. Aupetit, "Signal conditioning for shock sensors," Application Note–STMicroelectronics, 2015.

    42. M. Serridge and T. R. Licht, "Piezoelectric accelerometers and vibration preamplifiers: theory and application handbook," 1987.

    43. M. Serridge and T. Licht, "Piezoelectric Accelerometer and Vibration Preamplifier Handbook, Brüel & Kjær," ed: November, 1987.

    44. B. Yaghootkar, S. Azimi, and B. Bahreyni, "A high-performance piezoelectric vibration sensor," IEEE Sensors Journal, vol. 17, no. 13, pp. 4005-4012, 2017.

    45. N. Aupetit, "Signal conditioning for shock sensors," Application Note AN4708, STMicroelectronics,[online], 2015.

    46. K. Blake, "Op Amp Precision Design: PCB Layout Techniques," Microchip Technology Inc., Tech. Rep. AN1258, 2009.

    47. P. D. Bruce Archambeault, Associate Editor, "Design Tips: PCB Decoupling Capacitor Mounting Top – Bottom – Either?," 18th Internation Zurich Symposium, September 24-28, 2007 2017.

    48. C. C. Hindrichsen, J. Larsen, E. Thomsen, K. Hansen, and R. Lou-Møller, "Circular piezoelectric accelerometer for high band width application," in SENSORS, 2009 IEEE, 2009: IEEE, pp. 475-478.

    49. L.-P. Wang, K. Deng, L. Zou, R. Wolf, R. Davis, and S. Trolier-McKinstry, "Microelectromechanical systems (MEMS) accelerometers using lead zirconate titanate thick films," IEEE Electron Device Letters, vol. 23, no. 4, pp. 182-184, 2002.

    QR CODE