本論文藉由三塊不同成長條件的氮化銦鎵樣品，以X-ray繞射、光制激發光譜與拉曼光譜等後續測量工具來分析樣品濃度並研究其樣品性質。結合三種量測工具，可以了解氮化銦鎵發光波段隨濃度變化的關係。

在光制激發光譜量測中，我們得知了三塊樣品的發光波段，其所處的波段分別位於藍綠光，橘光與紅外光1.55□m附近，展現出氮化銦鎵發光能力的優異性以及其發光波段可以在極大的光譜範圍內調控。在全彩顯示元件、白光照明、光纖通訊元件以及其他非常多應用方面，氮化銦鎵材料都具有發展潛力。

藉由變溫光譜與變激發強度光譜的量測，可讓我們更瞭解材料的發光機制，對改善成長條件以增進更好的發光效率有相當大的幫助。

對於氮化銦鎵三元混晶薄膜，拉曼光譜的峰值會大略的與濃度呈線性變化關係。且對於氮化鎵，可以藉由拉曼光譜形狀擬合出薄膜內的自由載子濃度，然而對於氮化銦則沒觀察到相同的現象。

Reference
[2.1] Porowski, S., Mater. Sci. Eng. B 44 , 407 (1997).
[2.2]紊振瀛。GaN雷射二極體之技術。物理雙月刊，20(2) (1998)。
[2.3] Bernard Gil, Group Ⅲ Nitride Semiconductor Compounds, p99.

[3.1]張石麟。材料分析，汪建民主編：中國材料科學學會 (1998)。
[3.2]許樹恩、吳泰伯。X光繞射原理與材料結構分析(修訂版)：中國材料科學學會 (1993)。
[3.3] B. D. Cullity, Elements of X-ray Diffraction (Addison-Wesley, Reading, MA, 1967).
[3.4] M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, G. Semond, J. Massies, and P. Gibart, J. Appl. Phys. 86 3721 (1999).
[3.5]李匡邦、許東明、何東英。光譜化學分析：國立編譯館主編 (1997)。
[3.6] Surface Analysis-the principle techniques, edited by J. C. Vickerman (John Wiley, New York, 1997).
[3.7] A. Pinczuk and E. Burstein, in Light Scattering in Solids, edited by M. Cardona (Springer, Berlin, 1984), p.23.
[3.8]H. A. Kramers, W. Heisenbers, Z. Phys. Vol. 31, 681, 1925.
[3.9] 許靜宜，拉曼散射有關的理論研究，碩士論文，NTHU PHYS (1987)。

[4.1] a=3.533 c=5.693 c/a=1.6114, A. Zubrulov, in Properties of advanced semiconductor materials: GaN, AIN, InN, BN, SiC, SiGe, edited by M. E. Levinshtein, S. L. Rumyantsev and M. S. Shur (John Wiley, 2001), p.50.
[4.2] a=3.5446 c=5.7034 c/a=1.6090, F. A. Ponce, in Group III nitride semiconductor compounds: Physics and Applications, edited by B. Gil (Clarendon, Oxford, 1998), p.127.
[4.3] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukal, MRS Internet J. Nitride Semicond. Res. 4S1, G1.1 (1999).
[4.4] Varshni Y P, Physica 34, 149 (1967).
[4.5] M. O. Manasreh, Phys. Rev. B. 53, 16 425 (1996).
[4.6] Y.-H Cho, G. H. Gainer, A, J. Fischer, H. H. Song, S. Keller, U. K. Mishra, and S. P. DenBaars. Appl. Phys. Lett. 73, 1370 (1998).
[4.7] P. G. Eliseev, Piotr Perlin, Jinhyun Lee, and Marek Osiski. Appl. Phys. Lett. 71, 569 (1997).
[4.8] H. P. D. Schenk, M. Leroux, and P. de Mierry J. Appl. Phys. 88 1525 (2000).
[4.9] E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, Le Si Dang, and B. Daudin, J. Appl. Phys. 94 3121 (2003).
[4.10] T. L. Tansley and C. P. Foley, J. Appl. Phys. 59 3241 (1986).
[4.11] J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, Hai Lu, and William J. Schaff, J. Appl. Phys. 94,4457 (2003).
[4.12] Daniel Fritsch, Heidemarie Schmidt, and Marius Grundmann PHYS. REV. B 69, 165204 (2004).
[4.13] V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, Phys. Stat. Solidi (b) 230 (2002b), R4
[4.14] K. L. Teo, J. S. Colton, P. Y. Yu, E. R. Weber, M. F. Li, W. Liu, K. Uchida, H. Tokunaga, N. Akutsu, and K. Matsumoto, J. Appl. Phys. 73 1697 (1998).
[4.15] Yong-Tae Moon, Dong-Joon Kim, Jin-Sub Park, Jeong-Tak Oh, Ji-Myon Lee,Young-Woo Ok, Hyunsoo Kim, and Seong-Ju Park, Appl. Phys. Lett. 79, 599 (2001).
[4.16] K. P. O’Donnell, J. F. W. Mosselmans, R. W. Martin, S. Pereira, M. E. White, J. Phys. Condens. Matt. 13, 6977 (2001).
[4.17] A. F. Wright, J. Appl. Phys. 82 2833 (1997).
[4.18] M. Cardona, in Light Scattering in Solids, edited by M. Cardona (Springer, Berlin, 1984).
[4.19] 王志純，氮化鎵材料薄膜之光致激發螢光光譜及拉曼光譜之研究，碩士論文，NTHU PHYS (2003)。
[4.20] T. Kozawa, T. Kachi, H. Kano, Y. Taga, M. Hashimoto, N. Koide, K. Manbe, J. Appl. Phys. 75 1098 (1994).
[4.21] A. Kasic, M. Schubert, Y. Saito, Y. Nanishi, and G. Wagner, Phys. Rev. B 65, 115206 (2002).
[4.22] J. Menendez and M. Cardona, Phys. Rev. B 31, 3696 (1985).
[4.23] V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, A. N. Smirnov, I. N. Goncharuk, A. V. Sakharov, D. A. Kurdyukov, M. V. Baidakova, V. A. Vekshin, S. V. Ivanov, J. Aderhold, J. Graul, A. Hashimoto, A. Yamamoto, Phys. Stat. Solidi (b) 240 425 (2003).
[4.24] H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000).
[4.25] Correia MR, Pereira S, Pereira E, Frandon J, Alves E, Appl. Phys. Lett. 83, 4761 (2003).
[4.26] V. Yu. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, and H. Harima, Phys. Rev. B 65, 125203 (2002).
[4.27]K. L. Teo, J. S. Colton, P. Y. Yu, E. R. Weber, M. F. Li, W. Liu, K. Uchida, H. Tokunaga, N. Akustsu, and Matsumoto, Appl. Phys. Lett. 71, 569 (1997).
[4.28] K. Obata, M. Yamanishi, Y. Kan, J. Hayashi, and I. Suemune, Appl. Phys. Lett. 57. 419 (1990).
[4.29] Y. Narukawa, Y. Kawakami, S. Fujita, and S. Fujita, Phys. Rev. B 55,R1938 (1997).