元件閘極氧化層日益變薄的趨勢是一直不斷的，但當氧化層厚度薄至25Å以下時，以熱成長的SiO2為氧化層的元件化因為直接穿遂效應而產生很大的漏電流，使整個元件的特性變差，因此尋找一種新的介電材料來替代原來的氧化層，是很重要的一個課提。
論文中選取的高介電係數材質為Ta2O5。我們知道在Ta2O5沈積過程中會產生一些缺陷，導致元件初始特性不佳、可靠性不良，所以需要界面前處理及沈積後退火處理來改善元件特性。文中發現在沈積Ta2O5前以爐管通入8000C NH3氣體5min且經由PDA N2O anneal 的元件初始特性有明顯的提升。但在經stress過後PDA N2O anneal 的元件可靠性特性就沒有比經由PDA O2 anneal 的元件來的好。

我們發現隨著天線比例的增加受電漿充電效應損傷的機會也越大，造成F-N stress可靠性也有明顯的衰退情形，另外，在PDA部分，我們發現O2 anneal 的元件，較容易隨著天線面積改變；也發現N2O anneal 的元件在經過stress後有較差的界面特性。由電荷分離分析可以知道，在經過電漿製程或是F-N stress過程中是因為有電子被陷在之前因為製程所產生的界面陷阱中，使得臨界電壓增大。在不同通道長度實驗結果可以發現當通道長度縮短時電漿傷害增加，這是因為所受到的電漿充電效應比例上來講較通道長度長的為大。

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