第一部份將先利用Cu與Pd催化的方式合成一系列triaryldiamine的衍生物來做為電洞傳輸層（Hole Transporting Layers, HTL），並以tris(8-hydroxyquinolinyl) aluminum（Alq3）及1,3,5-tris(1-phenyl-1H-2- benzimidazolyl)benzene（TPBI）當電子傳輸層（Electron Transporting Layers, ETL）分別與這些電洞傳輸材料來做成雙層之元件，再藉由電流密度與電壓之關係、發光強度與電壓之關係以及發光效率與電流密度之關係來探討元件的發光效能。由實驗的結果可以得知，indium tin oxide（ITO）與HTL之間的界面能障和元件的啟動電壓有關，而發光效率則和ITO/HTL以及HTL/ETL之間的界面能障皆有關聯。
第二部分將合成得到一系列1,3-bis(1-phenyl-1H-2-benzimidazolyl) benzene（BPBI）的衍生物來做為電子傳輸層，並將這些電子傳輸材料分別與4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl（NPB）來做成雙層的元件，再藉由電流密度、發光強度以及發光效率等性質來探討這些官能基的改變對於元件發光效能造成的影響。

A variety of triaryldiamines were synthesized and the use of these compounds as hole transporting layers (HTL) in bilayer organic light-emitting diodes (OLED), fabricated using either tris(8-hydroxyquinolinyl) aluminum (Alq3) or 1,3,5-tris(1-phenyl-1H-2-benzimidazolyl) benzene (TPBI) as the electron transporting layers (ETL), was explored. The efficiency of the devices was assessed by measuring their current density vs. voltage, luminance vs. voltage, and external quantum efficiency vs. current density characteristics. It was discovered that the turn-on voltage is related to the energy barrier of indium tin oxide (ITO) and HTL interface. As well, the external quantum efficiency of the devices is related to not only the energy barrier of the ITO/HTL interface, but also that of the HTL/ETL interface. The details of this study comprised the first part of this thesis.
A series of 5-substituted 1,3-bis(1-phenyl-1H-2-benzimidazolyl) benzene (BPBI) were synthesized and its utility as electron transporting layers of OLEDs, fabricated using 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (NPB) as the HTL, was investigated. The performance of these devices as measured in terms of current density, brightness, and quantum efficiency as a function of substitution is assessed and discussed in the second part of this thesis.

1. Pope, M.; Kallmann, H. P.; Magnante, P. J. Chem. Phys. 1963,
38, 2042.
2. Tang, C. W.; VanSlyke, S. A. Appl. Phys. Lett. 1987, 51,
913.
3. Burroughes, J. H.; Bradley, D. D. C.; Brown, A. R.; Marks,
R. N.; Mackay, K.; Friend, R. H.; Burns, P. L.; Holmes, A.
B. Nature, 1990, 347, 539.
4. 陳金鑫,石建民,鄧青雲,化學, 1996, 54, 125.
5. Kelly, S. M.; Flat Panel Displays Advanced Organic
Materials; The Royal Society of Chemistry, Cambridge, 2000.
6. 吳忠幟,光訊, 1998, 73, 19.
7. Ishida, T.; Kobayashi, H.; Nakato, Y. J. Appl. Phys. 1993,
73, 4334.
8. Tang, C. W.; VanSlyke, S. A.; Chen, C. H. J. Appl. Phys.
1989, 65, 3610.
9. Ko, C. W.; Tao, Y. T.; Danel, A.; Krzeminska, L.; Tomasik,
P. Chem. Mater. 2001, 13, 2441.
10. Mitschke, U.; Bauerle, P. J. Mater. Chem. 2000, 10,
1471.
11. Borsenberger, P. M.; Mey, W.; Chowdry, A. Appl. Phys. 1978,
49, 273.
12. Kraft, A.; Grimsdale, A. C.; Holmes, A. B. Angew. Chem.,
Int. Ed. 1998, 37, 402.
13. Grell, M.; Bradley, D. D. C. Adv. Mater. 1999, 11, 895.
14. Lussem, G.; Wendorff, J. H. Polym. Adv. Technol. 1998, 9,
443.
15. Friend, R. H.; Gymer, R. W.; Holmes, A. B.; Burroughes, J.
H.; Marks, R. N.; Taliani, C.; Bradley, D. D. C.; Dos
Santos, D. A.; Bredas, J. L.; Logdlund, M.; Salaneck, W.
R. Nature, 1999, 397, 121.
16. Greiner, A. Polym. Adv. Technol. 1998, 9, 371.
17. Segura, J. L. Acta Polym. 1998, 49, 319.
18. Chen, C. H.; Shi, J.; Tang, C. W. Macromol. Symp. 1997,
125, 1.
19. Chen, C. H.; Shi, J. Coord. Chem. Rev. 1998, 171, 161.
20. Thelakkat, M.; Schmidt, H. W. Polym. Adv. Technol. 1998, 9,
429.
21. Organic Electroluminescent Materials and Devices; Miyata,
S.; Nalwa, H. S. Eds.; Gordon and Breach, Amsterdam, 1997.
22. Bassler, H. Polym. Adv. Technol. 1998, 9, 402.
23. Blom, P. W. M.; de Jong, M. J. M.; Liedenbaum, C. T. H. F.
Polym. Adv. Technol. 1998, 9, 390.
24. Kido, J. Phys. World, 1999, 12, 27.
25. Freeman, D. C.; White, C. E.; J. Am. Chem. Soc. 1956, 78,
2678.
26. VanSlyke, S. A.; Tang, C. W.; Roberts, L. C. US Patent
4,720,432, 1998.
27. Murthy, S. S. N.; Gangasharan, Nayak, S. K. J. Chem. Soc,
Faraday Trans. 1993, 89, 509.
28. Koene, B. E.; Loy, D. E.; Thompson, M. E. Chem. Mater.
1998, 10, 2235.
29. Bredas, J. L.; Silbey, R.; Boudreaux, D. S.; Chance, R. R.
J. Am. Chem. Soc.1983, 105, 6555.
30. Janietz, S.; Bradley, D. D. C.; Grell, M.; Giebeler, C.;
Inbasekaran, M.; Woo, E. P. Appl. Phys. Lett. 1998, 73(17),
2453.
31. Giebeler, C.; Antoniadis, H.; Bradley, D. D. C.; Shirota,
Y. J. Appl. Lett. 1999, 85, 608.
32. Burrows, P. E.; Shen, Z.; Bulovic, V.; McCarty, D. M.;
Forrest, S. R.; Cronin, J. A.; Thompson, M. E. J. Appl.
Phys. 1996, 79, 7991.
33. Antoniadis, H.; Miller, J. N.; Roitman, D. B. IEEE
Electron. Devices 1997, 44, 1289.
34. Riel, H.; Vestweber, H.; Riess, W. Proc. SPIE 1998, 3281,
240.
35. Perrin, D. D.; Armarego, W. L. F. Purification of
Laboratory Chemicals, 3rd Ed.; Pergamon Press, 1988.
36. Gauthier, S.; Frechet, J. M. J. Synthesis 1987, 383.
37. Driver, M. S.; Hartwig, J. F. J. Am. Chem. Soc. 1996, 118,
7217.
38. Wolre, J. P.; Wagaw, S.; Buchwald, S. L. J. Am. Chem. Soc.
1996, 118, 7215.
39. Beissel, T.; Powers, R. E.; Parac, T. N.; Raymond, K. N. J.
Am. Chem. Soc. 1999, 121(17), 4200.
40. Giumanini, A. G.; Chiavari, G.; Musiani, M. M; Rossi, P.
Synthesis, 1980, 743.
41. Jones II, G.; Jackson, W. R.; Choi, C. Y.; Bergmark, W. R.
J. Phys. Chem. 1985, 89, 294.
42. Hamada, Y.; Kanno, H.; Tsuyoshi, T.; Takahashi, H.; Usuki,
T. Appl. Phys. Lett. 1999, 75, 1682.