Analysis of Non-Nucleoside Reverse Transcriptase Inhibitors for Human Immunodeficiency Virus Type 1 by AlGaN/GaN High Electron Mobility Transistors and Binding-site Model

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研究生：	康晏文
論文名稱：	Analysis of Non-Nucleoside Reverse Transcriptase Inhibitors for Human Immunodeficiency Virus Type 1 by AlGaN/GaN High Electron Mobility Transistors and Binding-site Model
指導教授：	葉哲良王玉麟
口試委員:	王禎翰鄭暉騰
學位類別：	碩士 Master
系所名稱：	工學院 - 奈米工程與微系統研究所 Institute of NanoEngineering and MicroSystems
論文出版年：	2014
畢業學年度：	102
語文別：	英文
論文頁數：	35
中文關鍵詞：	AlGaN/GaN高電子遷移率電晶體、人類免疫缺陷病毒、非核苷類反轉錄酶抑制劑
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由第一型人類免疫缺陷病毒(HIV-1)所引起的後天免疫缺乏症候群(AIDS)在全球已成為一非常嚴重的傳染疾病。常見的治療方式為藉由高專一性藥物直接抑制人類免疫缺陷病毒中的反轉錄酶(RT)活性，藉以降低病毒的傳染力以及治病幸而達到療效，而非核苷類反轉錄酶抑制劑(NNRTIs)即為常見的三種抗第一型人類免疫缺陷病毒的藥物之一。

藉由將反轉錄酶固定在AlGaN/GaN高電子遷移率電晶體上(AlGaN/GaN HEMTs)，並輔以接合點模型來分析非核苷類反轉錄酶抑制劑對反轉錄酶之間的反應，進而分析出其藥物的效果。本實驗中利用一已被美國食品藥品監督管理局認證之非核苷類反轉錄酶抑制劑，依法韋侖(Efavirenz)，作為試驗目標，介意測試本實驗分法的準確性。由實驗的結果得出依法韋侖對反轉錄酶的解離常數為0.212 nM。而由結合點模型可得出依法韋侖對反轉錄酶為一個接合點的反應。此兩結果皆與文獻相符合。

利用AlGaN/GaN高電子遷移率電晶體以及接合點模型來分析非核苷類反轉錄酶抑制劑對反轉錄酶的藥物效果有非常高的準確度以及可靠性，我們相信此一方法在未來能有效的輔助新型的分析非核苷類反轉錄酶抑制劑的開發。

Chapter 1 Introduction………………………………………………………………1
1 Motivation………………………………………………………………………...1
Chapter 2 Literature Review………………………………………………………...3
1 Acquired Immunodeficiency Syndrome (AIDS) ……………………………….3
1.1 HIV-1 and Reverse Transcriptase (RT)……………………………………….4
1.2 Non-nucleoside Reverse Transcriptase Inhibitors (NNRTIs)………………..6
2 AlGaN/GaN High Electron Mobility Transistors (HEMTs)…………………...7
3 Surface Cleaning Process……………………………………...…………………8
Chapter 3 Experimental……………………………………………………………10
1 HEMTs Fabrication……………………….…………………………………….10
2 HIV-1 RT Immobilization………………………………………………………12
3 Signal Measurement…………………………………………………………….15
Chapter 4 Result and Discussion……………………………….………………….17
1 Real Time Result………………………………………………………………...17
2 Data Analysis……………………………………………………………………20
3 Curve Fitting with One Binding-site Model…………………………………..22
4 Curve Fitting with Two Binding-site Model………………………….……….26
5 Curve Fitting with linear regression of the Langmuir isotherm equation…..28
Chapter 5 Conclusion and Future work…………………………………………...30
Reference…………………………………………………………………………….33

                                

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