本論文會稍微介紹奈米碳管的發展，奈米碳管的種類、奈米碳管的應用、奈米碳管的成長方式、實驗結構的設計、光罩佈局和旋塗技術，並介紹所使用的機台和實驗流程以及所使用的碳管種類。接著介紹多重閘極穿隧式奈米碳管電晶體，在本研究中其次臨界曲線( sub-threshold swing ，S.S)可以達到55mV/dec。而再同一顆元件上利用這種P-i-N結構跟以往的N-i-N結構，來比較其開關電流比，可觀察到P-i-N型會比N-i-N型穿隧奈米碳管電晶體的導通電流大15%以上。藉由將一端的能帶提高來降低穿隧能障，提高其穿隧機率可以增加穿隧電流約40%。改變通道中能帶的分布來改善其雙極特性，對於奈米碳管在未來應用於電子元件上將有很大的助益。因此本章節將就非對稱多重閘極碳管電晶體做詳細的電性分析並由能帶圖的觀點載子是如何經由閘極電場所產生的能帶從源極端到達汲極端。
為了瞭解半導性奈米碳管隨著元件表面起伏所造成的彎曲和電性之間的關係，於是我們使用不同厚度的氧化層造成結構表面有明顯高低差來製作電晶體。經由本章的量測結果，我們可以觀察到當半導性奈米碳管彎曲時，會使得截止電流下降，且有較高的on/off ratio的開關特性，寄望未來利用此一特性的調整，可以達成更好的元件特性。

[1]. R.Rao, A.Srivastave, D.Blaauw, D.Sylvester,”Statistical analysis of
subthreshold leakage current for VLSI circuits” TVLSI. 2003. 821549 p.58
[2]. Leland Chang, Stephen Tang, Tsu-Jae King, Jeffrey Bokor, and Chenming Hu,“Gate Length Scaling and Threshold Voltage Control of Double-Gate MOSFETs” IEDM-2000,p.719
[3]. M. Pourfath∗, H. Kosina∗, B.H. Cheong†, W.J. Park□, and S. Selberherr “The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors” Proceedings of 2005 5th IEEE Conference on Nanotechnology , Nagoya, Japan, July 2005
[4]. C. H. Choi, T. S. Jeon, R. Clark, and D. L. Kwong, ” Electrical Properties and Thermal Stability of CVD HfOxNy Gate Dielectric With Poly-Si Gate Electrode”, IEEE EDL, VOL. 24, NO. 4, p. 215, 2003
[5]. Alexei Svizhenko, M. P. Anantram, and T. R. Govindan,” Ballistic Transport and Electrostatics in Metallic Carbon Nanotubes” IEEE Transactions On Nanotechnology, VOL. 4, NO. 5, p. 557, 2005
[6]. Ali Javey1, Jing Guo, Qian Wang, Mark Lundstrom and Hongjie Dai1”Ballistic carbon nanotube field-effect transistors” Nature VOL 424, p. 654, 2003
[7]. W. Hoenlein, F. Kreupl, G.S. Duesberg, A.P. Graham, M. Liebau, R. Seidel, E. Unger” Carbon nanotubes for microelectronics: status and future prospects” Materials Science and Engineering C 23, p. 663–669, 2003
[8]. H. W. Kroto, J. R. Heath, S. C. Obrien, R. F. Curl and R. E. Smalley. “C-60 - Buckminsterfullerene", Nature, Vol.318, p.162-163, 1985
[9]. C. Zhou, J. Kong, and Hongjie Dai, “Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters”, Appl. Phys. Lett. vol. 76, pp. 1597-1599, 2000
[10]. A. Javey, M. Shim, and H. Dai, “Electrical properties and devices of large-diameter single-walled carbon nanotubes,” Appl. Phys. Lett., vol. 80, pp. 1064-1066, 2002
[11]. Teri Wang Odom, Jin-Lin Huang, Philip Kim and Charles M. Liebe,”Atomic structure and electronic properties of single-walled carbon nanotubes”, Nature, Vol.391, p.62-64, 1998.
[12]. J. W. Mintmire, B. I. Dunlap, and C. T. White,” Are fullerene tubules metallic?”, Phys. Rev. Lett., vol. 68, pp. 631-634, 1992
[13]. J. Wild□er et al., “Atomic structure and electronic properties of single-walled carbon nanotubes,” Nature vol. 391, pp. 59-61, 1998
[14]. Ando Y.1; Zhao X.; Hirahara K.; Suenaga K.; Bandow S.; Iijima S.” Mass production of single-wall carbon nanotubes by the arc plasma jet method”, Chem Phys Lett,2000,323:580
[15]. Xiaolei Liu, Chenglung Lee, Song Han, Chao Li, Chongwu Zhou,”Carbon Nanotubes: Synthesis, Devices, and Integrated Systems”, Molecular Nanoelectronics, American Scientific Publishers, 2003.
[16]. Sander J. Tans, Alwin R.M. Verschueren, Cees Dekker,” Organic-
functionalized molecular sieves as shape-selective catalysts”, Nature,Vol.393, p.49-51, May 1998.
[17]. Phillip G. Collins, Michael S. Arnold, Phaedon Avouris,”Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown”, Science,Vol.292, p.706, Apr 2001.
[18]. V. Derycke, R. Martel, J. Appenzeller, and Ph. Avouris,”Carbon Nanotube Inter- and Intramolecular Logic Gates”, Nano Letters, Vol.1, No.9,p.453-456, Apr 2001.
[19]. Adrian Bachtold, Peter Hadley, Takeshi Nakanishi, CeesDekker
”Logic Circuits with Carbon Nanotube Transistors”, Science, Vol.294, p.1317-1320,Nov 2001.
[20]. Hongjie Dai,” Carbon nanotubes: opportunities and challenges”, Surface Science, Vo500, p.218-241, Mar 2002
[21]. F. Kreupl, A.P. Graham, G.S. Duesberg, W. Steinhogl, M. Liebau, E. Unger,W.Honlein,”Carbon nanotubes in interconnect applications,” Micro-electronic Engineering,vol. 64, pp. 399-408, 2002
[22]. J. Hone,”Carbon nanotube Topics in Applied Physics,”pp. 273, 2001.
[23]. H. Dai, E. W. Wong, and C. M. Lieber, “Probing electrical transport in anomaterials : conductivity of individual carbon nanotubes,” Science, vol.272, pp. 523-526, 1996.
[24]. S. Frank, P. Poncharal, Z. L. Wang, and W. A. deHeer, ”Carbon nanotube quantum resistors,” Science, vol. 280, pp. 1744-1746, 1998
[25]. Zhihong Chen,1 Joerg Appenzeller,1* Yu-Ming Lin,1 Jennifer Sippel-Oakley2Andrew G. Rinzler,2 Jinyao Tang,3 Shalom J. Wind,4 Paul M. Solomon,1Phaedon Avouris1”An Integrated Logic Circuit Assembled on a Single Carbon Nanotube”Science 24 March 2006: Vol. 311. no. 5768, p. 1735
[26]. 奈米通訊。第六卷第三期36.雙鑲嵌結構製作技術簡介
[27]. Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger” Carbon Nanotubes for Interconnect Applications” Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International p 683- 686
[28]. Teri Wang Odom, Jin-Lin Huang, Philip Kim and Charles M. Liebe,”Atomic structure and electronic properties of single-walled carbon nanotubes”, Nature, Vol.391, p. 62, 1991
[29]. J. Tersoff,”Contact resistance of carbon nanotubes”, Applied Physics Letters, Vol.74, No.15, p.2122-2124, 1999
[30]. Y. Zhang, T. Ichihashi, E. Landree, F. Nihey, and S. Iijima,” Heterostructures of Single-Walled Carbon Nanotubes and Carbide Nanorods,” Science, Vol.285, p.1719-1722, 1999
[31]. Jeong-O Lee, ”Formation of low-resistance ohmic contacts between carbon nanotube and metal electrodes by a rapid thermal annealing method” Applied Physics Letters, vol. 33, p.1953-1956, 2000
[32]. Jeng-Hua Wei, Hung-Hsiang Wang, Hsin-Hui Chen, Ming-Jiunn Lai,
ing-Jer Kao, and Ming-Jinn Tsai “A Novel Short-Gate Carbon Nanotube Thin Film transistors” VLSI Technology, Systems, and Applications, 2003 International Symposium on,p.42-45
[33]. Yu-Ming Lin Joerg Appenzeller, Joachim Knoch, and Phaedon Avouris, ” High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities” IEEE Transactions On Nanotechnology, Vol. 4, No. 5, p. 481, 2005
[34]. Z. Guangyu, W. Xinran, “Carbon Nanotubes: From Growth, Placement
and Assembly Control to 60mV/decade and Sub-60 mV/decade Tunnel
Transistors IEEE IEDM Technical Digest, p. 4 pp., 2006
[35]. S.Lundstrom ,” Computational Study of Carbon Nanotube p-i-n Tunnel FETs”, IEEE IEDM, p. 518, 2005
[36]. M P Anantram1 and F L´eonard2,“Physics of carbon nanotube electronic devices”, Rep. Prog. Phy,s. 69 (2006) 507–561
[37]. course: “deep-submircon-device” chapter 1 p.111
[38]. course: “deep-submircon-device” chapter 1 p.112
[39]. Phaedom Avouris, member, IEEE, Joerg appenzeller, Richard Martel, and Shalom J. Wind, senior member, IEEE” Carbon Nanotube Electronics”, Proceedings of the IEEE, VOL. 91, NO. 11, NOVEMBER 2003
[40]. Paul L. McEuen, Michael S. Fuhrer, and Hongkun Park,”Single-Walled Carbon Nanotube Electronics”, IEEE Transactions on Nanotechnology, Vol.1, No.1, p.78-85, Mar 2002
[41]. E. D. Minot, Yuval Yaish,Vera Sazonova, Ji-Yong Park, Markus Brink, and Paul L. McEuen “Tuning Carbon Nanotube Band Gaps with Strain” Phys.Rev.Lett.90.156401
[42]. Amitesh Maiti,1,* Alexei Svizhenko, and M. P. Anantram“Electronic
Transport through Carbon Nanotubes: Effects of Structural Deformation and Tube Chirality” Phys.Rev.Lett.88.126805
[43]. M. P. Anantram,* Jie Han, and J. P. Lu†,Band-gap change of carbon
nanotubes: Effect of small uniaxial and torsional strain, PHYSICAL
REVIEW B VOLUME 60, Number 19 15 NOVEMBER 1999-I
[44]. Yoon, Y.; Jing Guo,” Analysis of Strain Effects in Ballistic Carbon
Nanotube FETs ” Electron Devices, IEEE Transactions on Volume 54,
Issue 6, June 2007 Page(s):1280 – 1287
[45]. Introduction to Semiconductor Manufacturing Technology Hong Xiao 著
羅正忠 張鼎張 譯 p.355
[46]. 李亞叡 ”多閘極穿襚式奈米碳管場效電晶體之電性研究”, NTHU ESS p.62