微晶矽薄膜電漿輔助化學氣相沉積製程之電漿放射光譜量測分析研究

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研究生：	張雅嵐 Chang, Ya-Lan
論文名稱：	微晶矽薄膜電漿輔助化學氣相沉積製程之電漿放射光譜量測分析研究 Parametric Study of Microcrystalline Silicon Thin Films Deposition by Plasma Enhanced Chemical Vapor Deposition Using Plasma Optical Emission Spectroscopy
指導教授：	柳克強 Leou, Keh-Chyang
口試委員:
學位類別：	碩士 Master
系所名稱：	原子科學院 - 工程與系統科學系 Department of Engineering and System Science
論文出版年：	2010
畢業學年度：	98
語文別：	英文
論文頁數：	98
中文關鍵詞：	微晶矽、電漿輔助化學氣相沉積、電漿放射光譜
外文關鍵詞：	Microcrystalline silicon, PECVD, OES
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The relations between process parameters for hydrogenated microcrystalline silicon (μc-Si:H) thin films and properties of deposited films are demonstrated in this thesis. μc-Si:H thin films are prepared by plasma-enhanced chemical vapor deposition (PECVD) with very high frequency (VHF) at 27.12 MHz. Several process parameters can influence properties of deposited films and also be studied in our results, as the hydrogen dilution ratio, the VHF-power, the pressure and the electrode gap. The glow of the plasma associated with properties of deposited films is detected by optical emission spectroscopy (OES). The spectral lines for our interest are the SiH* (412.8 nm), the Hα (656.2 nm), the Hβ (486.2 nm) and the H2 Fulcher (600-630 nm). OES measurement results are shown in the types of OES-ratios (Hα/ SiH*, Hβ/ SiH*) to analyze the connection with properties of deposited films. The degree of crystalline (Xc) as the material property is obtained by Raman system. The photosensitivity as the electrical property is detected by solar simulator. In our case, the correlations between process parameters for μc-Si:H thin films and properties of deposited films can be proved that the variations of OES-ratios at different deposition parameters are similar with the degree of crystalline but opposite to the photosensitivity. From these results, we can predict properties of deposited films from measurement results of OES.

Abstract………………………………………………………………………………..ii
Acknowledgment……………………………………………………………………..iii
Contents .................................................................................................................... v
List of Tables ......................................................................................................... viii
List of Figures ........................................................................................................ xiii
Chapter1. Introduction………………………………………………………………...1
1 Background……………………………………………………………………...1
2 Motivation………………………………………………………………………4
3 Purpose………………………………………………………………………….6
Chapter2. Literature Review…………………………………………………………..7
1 OES as the diagnostic technique for the morphological phase transition………7
2 The relation between the degree of crystalline (Xc) and the OES measurement result……………………………………………………………………………….10
3 The process drift and the process control are monitored by OES……………..12
4 Summary……………………………………………………………………….17
Chapter3. The fundamental principles……………………………………………….18
1 Principle of plasma…………………………………………………………….18
2 Chemical reactions in SiH4/H2 plasma………………………………………...21
2.1 Primary reaction…………………………………………………………..21
2.2 Secondary reaction………………………………………………………..22
3 Deposition mechanism for microcrystalline silicon…………………………...23
3.1 Surface-diffusion model ………………………………………………….23
3.2 Etching model …………………………………………………………….24
3.3 Chemical-annealing model………………………………………………..24
4 Principle of plasma optical emission spectroscopy…………………………....26
Chapter4. Investigation methods and experimental setups…………………………..28
vi
1 Investigation methods……………………………………………………….…28
2 Plasma enhanced chemical vapor deposition system (PECVD)……………....31
3 Optical emission spectrometer (OES)…………………………………………35
3.1 Fitting for optical emission spectrum……………………………………..37
4 Micro-Raman microscopy……………………………………………………..46
4.1 Fitting for Raman spectrum……………………………………….………48
5 Photosensitivity………………………………………………………………..50
6 Grain size………………………………………………………………………52
Chapter5. Results and Discussions .......................................................................... 53
1 Hydrogen Dilution Ratio (R)………………………………………………......53
1.1 Optical Emission Spectrum………………………………………………..54
1.2 Material Property………………………………………………………….57
1.3 Electrical Property…………………………………………………………59
1.4 Deposition Rate (Rd)………………………………………………………62
2 Pressure………………………………………………………………………...63
2.1 Optical Emission Spectrum………………………………………………..64
2.2 Material Property………………………………………………………….67
2.3 Electrical Property…………………………………………………………70
2.4 Deposition Rate (Rd) ……………………………………………………...72
3 Power…………………………………………………………………………..74
3.1 Optical Emission Spectrum………………………………………………..75
3.2 Material Property………………………………………………………….78
3.3 Electrical Property…………………………………………………………80
3.4 Deposition Rate (Rd) ……………………………………………………...83
4 Electrode gap ……………………….………………………………………….84
4.1 Optical Emission Spectrum……………………………….……………….85
4.2 Material Property………………………………………………………….88
vii
4.3 Electrical Property…………………………………………………………90
4.4 Deposition Rate (Rd) ……………………………………………………...92
Chapter6. Conclusions ............................................................................................. 94
References ............................................................................................................... 96

                                

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