我們以射頻磁控濺鍍法製備金屬-鐵電(鋯鈦酸鉛)-絕緣層-半導體電容。本實驗採用兩種不同絕緣層(insulator) La2O3與HfO2，以射頻磁控濺鍍法方式，沉積不同厚度的絕緣層(insulator)當作緩衝層(buffer layer)。而後經由不同溫度的熱退火處理後，再以射頻磁控濺鍍法沈積PZT，最後再以lift-off的方式製作上電極，由此完成樣品的製作。自發性極化的特性是鐵電材料應用於非發揮性記憶體的主要精神，故本實驗主要是藉由電容－電壓以及電流－電壓的量測探討鐵電材料在其中所扮演的角色。
在本實驗中我們成功的製作金屬/鐵電薄膜(PZT)/絕緣體(La2O3、HfO2)/半導體(p-Si)電容器，並對其電性作分析，由電容－電壓的量測結果，我們可發現其C-V曲線走向在掃瞄振幅電壓小於6V時為順時針走向，而在掃瞄振幅電壓大於6V時為逆時針走向，這表示在當外加電壓小於6V時，C-V走向是鐵電極化在主導；當外加電壓大於6V時，電荷注入的影響大於鐵電極化，因此C-V走向是電荷注入在主導。
我們同時發現不同的絕緣層對記憶窗有很大的影響，因為不同的絕緣層會對不同的氧化曾電荷有不同的影響，氧化層電荷對記憶窗有很大的關聯，本實驗我們發現La2O3的氧化電荷為介面陷住電荷，而
HfO2為固定氧化層電荷。
我們進ㄧ步用La2O3為絕緣層來製作電晶體，可是卻沒有很好的記憶體的特性，可能是製程上有需要做進ㄧ步的改進。

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