藉由在1000 ℃和1 atm 條件下，可利用金屬薄膜、矽基板以及
金奈米顆粒，在1000 ℃和1 atm 條件下合成出矽奈米線。可調控之
矽奈米線直徑或是成長方向可經由不同大小尺寸的金奈米顆粒做為
催化劑和使用不同晶向的矽基板。剛產出的奈米材料的晶體結構、微
結構、化學成分、光學的性質，可分別透過X 光繞射儀、穿透式電子
顯微鏡、掃描穿透式電子顯微鏡、臨場穿透式電子顯微鏡去分析。另
外也會將可控制成長方向和半徑的矽奈米線當成模板，利用四氯化鈦
當成鈦的來源合成出矽與矽化鈦異質接面的奈米線。
實驗結果發現，利用臨場穿透式電子顯微鏡觀測矽與矽化鈦異質
接面的奈米線，在提供外加鈦來源的情形下，鈦與矽與矽化鈦異質接
面的奈米線反應的結果與薄膜反應不同。此種二階段合成的矽與矽化
鈦異質接面的奈米線，提供了一個製造功能性奈米元件，極具潛力與
發展的合成方法。

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