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研究生： 張郁□
Yu-Hsien Chang
論文名稱： 以原子力顯微術製作氧化鎳奈米結構並應用於奈米材料選區成長
Fabrication of Nickel Oxide Nanostructures by Atomic Force Microscopy and Its Application to the Selective Growth of Nanomaterials
指導教授： 林鶴南
Heh-Nan Lin
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2004
畢業學年度： 92
語文別： 中文
論文頁數： 63
中文關鍵詞： 原子力顯微術 、奈米氧化 、奈米碳管 、氧化矽奈米線
外文關鍵詞： atomic force microscopy, nano-oxidation, carbon nanotubes, silicon oxide nanowires
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    • 原子力顯微術近年來在奈米微影技術方面具有相當大的潛力。尤其，以原子力顯微術的奈米氧化基於適用樣品廣泛、可於大氣環境下操作、具有奈米級解析度等優點，對於製作奈米結構及奈米元件已經建立了一套具重複性且可靠的技術。
    本實驗利用原子力顯微術施加負偏壓於導電探針製作各式的氧化鎳奈米結構，其中所製作的氧化點寬度最小可至36 nm。利用稀硝酸移除未氧化的鎳膜而留下氧化鎳結構後，再利用氧化鎳作為觸媒，達到以感應耦合電漿化學氣相沈積系統選區成長垂直排列的奈米碳管之目的。此外亦可將氧化鎳奈米結構透過氣-液-固反應生成氧化矽奈米線。當氧化鎳點的平均大小縮小，奈米碳管或氧化矽奈米線的平均直徑也將隨著下降。本實驗所發展之技術，可用來有效控制奈米碳管或氧化矽奈米線的直徑大小與成長位置。

    Atomic force microscopy (AFM) has recently demonstrated a mighty potential in the domain of nanolithography. Particularly, AFM nano-oxidation has been established as a reliable and routine technique for nanostructure and nanodevice fabrication, owing to its advantages of wide range of applicable samples, operation under ambient conditions and nanoscale resolution.
    We have employed AFM nano-oxidation to produce a variety of nickel oxide nanostructures by applying a negative bias to a conductive tip. A minimum oxide dot width of about 35 nm was achieved by this technique. After a dip in diluted nitric acid solution, the unoxidized nickel film was etched away and the oxide patterns were preserved. The nickel oxide patterns were then used as catalytic templates and the selective growth of vertically aligned carbon nanotubes by inductively coupled plasma chemical vapor deposition (ICP-CVD) was realized. Besides, the nickel oxide patterns were also used to grow silicon oxide nanowires through a vapor-liquid-solid reaction. In addition, it was found that the average diameter of carbon nanotubes or silicon oxide nanowires decreased as the average size of the nickel oxide dots was reduced. The present technique can used effectively to control the position and the diameter of carbon nanotubes or oxide nanowires.

    目 錄 中文摘要 Ⅰ 英文摘要 Ⅱ 誌謝 Ⅲ 目錄 Ⅳ 圖目錄 Ⅶ 表目錄 Ⅹ 第一章、簡介 1 1.1 奈米氧化............................................1 1.2 奈米碳管............................................2 1.3 氧化矽奈米線........................................4 1.4 實驗目的............................................6 第二章、文獻回顧 8 2.1 奈米氧化原理與理論..................................8 2.1.1奈米氧化原理.......................................8 2.1.2奈米氧化理論......................................10 2.1.2.1 Cabrera-Mott model.............................10 2.1.2.2 Avouris-Hertel-Martel model....................12 2.2奈米氧化發展與影響因素..............................13 2.2.1奈米氧化發展......................................13 2.2.2奈米氧化影響因素..................................14 2.2.2.1水橋尺度與環境濕度..................14 2.2.2.2不同操作模式比較....................15 2.2.2.3外加偏壓與脈衝時間..................16 2.2.2.4偏壓模式............................17 2.2.2.5掃描速率............................17 2.3以氫氣還原氧化鎳....................................18 2.4奈米碳管選區成長發展................................19 2.5氧化矽奈米線發展....................................20 第三章、實驗儀器與方法 22 3.1原子力顯微術( AFM ).................................22 3.2奈米氧化............................................24 3.3感應耦合電漿化學氣相沈積系統( ICP-CVD ).............27 3.4遠紅外線快速升溫爐( MILA3000-P-N )..................28 3.5 X射線能量散佈光譜儀( EDS ).........................29 3.6歐傑電子能譜儀( AES )...............................30 第四章、氧化鎳圖樣製備與還原 32 4.1氧化鎳奈米結構製作..................................32 4.1.1試片製備..........................................32 4.1.2局部區域氧化圖樣製備..............................33 4.1.3點陣列氧化圖樣製備................................34 4.2氧化鎳成長速率......................................36 4.3氧化前後成分分析....................................38 4.4以氫氣還原氧化鎳圖樣................................39 4.4.1高度量測..........................................39 4.4.2歐傑電子能譜儀分析................................42 第五章、選區成長奈米碳管及氧化矽奈米線 44 5.1選擇性蝕刻..........................................44 5.2選區成長奈米碳管....................................46 5.3定點成長單根奈米碳管................................48 5.4選區成長氧化矽奈米線................................50 第六章、結論 57 參考文獻 59

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