本篇論文是研究如何利用不同的製程與元件結構，改善奈米碳管場效電晶體的電特性，並利用分析儀器來分析所成長之奈米碳管的物理性質。
在元件製程方面，我們使用成長式與旋塗式這兩種方法來製得奈米碳管場效電晶體，經比較這兩者的電特性，我們知道使用成長式方法所製得的電晶體，不管在電特性、製程的穩定性與元件製作效率，其表現都遠比使用旋塗式方法製得的電晶體來的好。在元件結構方面，我們利用具S/D接面隔離的結構，製得了一單極性的奈米碳管場效電晶體，使得其在邏輯電路上實用性大大地提高。我們也試著把試片放到真空下量測，由量測結果得知，在真空下的奈米碳管場效電晶體會由P型變成N型。
在奈米碳管物性分析方面，我們利用SEM及AFM測量碳管的直徑，使用拉曼光譜來分析碳管的性質。經由結合AFM及拉曼分析的結果，我們確認了所成長的碳管確實為單壁奈米碳管。

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