摘要

本研究在不同製程參數下合成奈米碳管，發現奈米碳管會因不同溫度及壓力造成碳原子濃度及催化劑顆粒大小的差異而產生不同形貌。
本實驗進一步利用不同角度的尖點改變催化劑的幾何因子來成長奈米碳管，皆可達到跨接單根奈米碳管的目的。同時在成長過程中輔以施加電壓的方式，並配合軟體之電場模擬，證明奈米碳管會受到電場的影響而順著電場線的方向排列；且調變施加電壓的時間亦可證明奈米碳管的成長機制為底端成長機制。
因此利用改變施加電壓的方式可成功使碳管順著平行電場線方向成長，使製程利於製作跨接奈米碳管電晶體或其他的奈米碳管電子元件。

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97.楊杰舜「上閘極單壁奈米碳管場效電晶體之研究」，國立清華大學材料科學工程研究所碩士論文 中華民國九十六年七月