本研究將以TSMC CMOS 0.35µm 2P4M標準製程當作製作平台，製作一CMOS-MEMS熱電式紅外線感測器，著重於熱電偶與吸收層結構設計，並提出利用特殊的蝕刻孔道排列方式，切斷原有的熱傳路徑，並使熱依照設計方向進行熱傳改變熱傳距離，在相同的感測器尺寸、相同的材料、相同的雜訊大小下增加感測器的響應度，期望透過結構的設計有效提升感測器的訊雜比，並設計一對照組以驗證設計概念。設計過程中透過理論分析與ANSYS有限元素模擬軟體協助計算響應度、等下雜訊電壓等參數，並將晶片透過後製程製作出結構，以實現一高靈敏度熱電式紅外線感測器。

This study implements a thermoelectric infrared sensor using TSMC 0.35µm 2P4M standard CMOS process to discuss the distribution of releasing holes affect the performance of the sensor. In MEMS device, releasing holes design is related to the time takes in the releasing process. However, the distribution of the releasing holes may affect the heat transfer path and changed the sensor performance. In this study, a CMOS-MEMS thermoelectric infrared sensor with strip-via releasing holes is designed for high responsivity when operating at low pressure and an existing design as comparison. The discrete releasing holes spread on the absorber membrane as existing design. Strip-via releasing holes split the absorber membrane into serpentine shape as proposed type. The thermocouples are a composite of two poly structure connected by metal1 and patterned along with the absorber membrane. In comparison, the design with strip-via releasing holes will increase responsivity 6.2 times faster than the existing design at low pressure. Moreover, the proposed design has the responsivity of 146.4VW-1, detectivity of 0.29*108cmHz0.5W-1 at 25mtorr and response time of 25.9ms.

[1]R. P. Feynman, “There's plenty of room at the bottom,” Journal of Microelectromechanical Systems, vol. 1, pp. 60-66, 1992.
[2]Nintendo, www.nintendo.com
[3]Yole Développement, www.i-micronews.com/reports/mems-sensors-report.html
[4]Texas Instruments, Inc., www.ti.com
[5] Melexis Microelectronic integrated systems, www.melexis.com
[6]H. Baltes, O. Brand, G. K. Fedder,C. Hierold, J. Korvink, and O. Tabata, CMOS MEMS: Advanced Micro and Nanosystems, vol.2, Weinheim, Germany, John Wiley&Sons Inc, 2005.
[7]J. H. Smith, S. Montague, J. J. Sniegowski, J. R. Murray, and P. J. McWhorter,” Embedded micromechanical devices for the monolithic integration of MEMS with CMOS,” Int. Electron Devices Meeting, Washington, DC, Dec., 1995.
[8] G. K. Fedder, “CMOS-based sensors,” IEEE Sensors Conf., Irvine, CA, Oct., 2005, pp. 125-128.
[9] Wikipedia, https://en.wikipedia.org/wiki/Infrared/
[10]FLIR system, www.flir.com
[11]Antoni Rogalski, "Infrared detectors: status and trends," Progress in quantum electronics, vol.27, 2003, pp. 59-210.
[12]F. Forsberg, A. Lapadatu, G. Kittilsland, S. Martinsen, N. Roxhed, A.C. Fischer, G. Stemme, B. Samel, P. Ericsson, N. Hoivik, T. Bakke, M. Bring, T. Kvisteroy, A. Ror, F. Niklaus, “CMOS-Integrated Si/SiGe Quantum-Well Infrared Microbolometer Focal Plane Arrays Manufactured With Very Large-Scale Heterogeneous 3-D Integration,” IEEE Journal of Selected Topics in Quantum Electronics, vol.21, 2700111, 2015.
[13]Arnold Daniels, "Field Guide to Infrared Systems, Detectors, and FPAs." SPIE, 2010.
[14]Dehui Xu, Bin Xiong, and Yuelin Wang,” Self-aligned thermoelectric infrared sensors with post-CMOS micromachining,” IEEE Electron Device Letters, vol.31, pp. 512-514, 2010.
[15] A.W. Van Herwaarden, and P. M. Sarro. "Thermal sensors based on the Seebeck effect." Sensors and Actuators , vol.10, pp. 321-346, 1986.
[16]Marc C. Foote, "Temperature stabilization requirements for unchopped thermal detectors." AeroSense'99. International Society for Optics and Photonics, 1999.
[17]Hirota, Masaki, Yoshimi Ohta, and Yasuhiro Fukuyama, "Low-cost thermo-electric infrared FPAs and their automotive applications." SPIE Defense and Security Symposium. International Society for Optics and Photonics, 2008.
[18]Omron, www.omron.com
[19]J. T. Cox, G. Hass, and G. F. Jacobus,” Infrared filters of antireflected Si, Ge, InAs, and InSb,” Journal of the Optical Society of America, vol. 51, pp. 714-718, 1961.
[20]Excelitas Technologies, www.excelitas.com/Pages/Product/Thermal-Infrared-Detectors.aspx
[21]M. Muller, W. Budde, R. Gottfried-Gottfried, A. Hubel, R. Jahne, and H. Kuck, ”A thermoelectric infrared radiation sensor with monolithically integrated amplifier stage and temperature sensor,” Proc. 8th Int. Conf. on Solid-State Sensors and Actuators, Stockholm, Sweden, June, 1995, pp. 640-643.
[22]Sarro P M, “Integrated silicon thermopile infrared detectors”, PhD Thesis, Delft Technical University, 1987.
[23]E Socher, O Bochobza-Degani, and Y Nemirovsky,”A novel spiral CMOS compatible micromachined thermoelectric IR microsensor,” J. Micromech. Microeng., vol.11, pp. 574-576, 2001.
[24]Huchuan Zhou, P Kropelnicki, J M Tsai, and Chengkuo Lee, ” CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers,” IEEE 26th Int. Conf. on Micro Electro Mechanical Systems, Taipei, Taiwan, Jan., 2013, pp. 429-432.
[25]J. Tanaka, M. Shiozaki, F. Aita, T. Seki, and M. Oba, ”Thermopile infrared array sensor for human detector application,” IEEE 27th Int. Conf. on Micro Electro Mechanical Systems, San Francisco, CA, Jan., 2014, pp. 1213-1216.
[26]Mohammad J Modarres-Zadeh, and Reza Abdolvand,” High-responsivity thermoelectric infrared detectors with stand-alone sub-micrometer polysilicon wires,” Journal of Micromech. Microeng., vol.24, 125013, 2014.
[27]Chung-Nan Chen,” Temperature error analysis and parameter extraction of an 8–14um thermopile with a wavelength-independent absorber for tympanic thermometer,” IEEE sensors Journal, vol.11, pp. 2310-2317, 2011.
[28] John Lehman, Evangelos Theocharous, George Eppeldauer, and Chris Pannell, "Gold-black coatings for freestanding pyroelectric detectors," Measurement Science and Technology, vol. 14, 2003.
[29] Louis Harris, Rosemary T. McGinnies, and Benjamin M. Siegel, " The Preparation and Optical Properties of Gold Blacks," JOSA, vol.38,pp. 582-589, 1948.
[30]M. Ohira, Y. Koyama, F. Aita, S. Sasaki, M. Oba, T. Takahata, I. Shimoyama and M. Kimata,” Micro mirror arrays for improved sensitivity of thermopile infrared sensors,” IEEE 24th Int. Conf. on Micro Electro Mechanical Systems, Cancun, Mexico, Jan., 2011, pp. 708-711.
[31]J. Schieferdecker, R. Quad, E. Holzenkämpfer, and M. Schulze, "Infrared thermopile sensors with high sensitivity and very low temperature coefficient." Sensors and Actuators A: Physical, vol. 47, pp. 422-427, 1995.
[32]T. Geballe and G. Hull, "Seebeck effect in silicon," Physical Review, vol.98, no. 4, pp. 940-947, 1955.
[33]Z. Dughaish, "Lead telluride as a thermoelectric material for thermoelectric power generation," Physica B, vol. 322, pp. 205-223, 2002.
[34]Klein, Larry A., and Lawrence A. Klein. Millimeter Wave and Infrared Multisensor Design and Signal Processing. Artech House, Inc., 1997.
[35]Akram I. Boukai, Yuri Bunimovich, Jamil Tahir-Kheli, Jen-Kan Yu, William A. Goddard III , and James R. Heath,” Silicon nanowires as efficient thermoelectric materials,” Nature, Jan., 2008, pp. 168-171.