隨著時代的演進，人類對於電子產品的需求量越來越大，從以前無法隨身帶著移動的電視，桌上型電腦，到現代強調可攜式的手機、智慧型個人數位助理(PDA)、數位相機、筆記型電腦等，都強調功能的多樣化，尤其是手機從單純的撥打電話到數位相機，到後來的內建視窗軟體，要處理這些複雜的功能相對對記憶體的需求量也越來越高。
在現代減碳節能的趨勢下，資料在移除電源就會消失的揮發性記憶體就不符合需求，非揮發記憶體也慢慢成為電子產品裡的重要元件，理想的非揮發記憶體應具備結構簡單、操作速度快、操作電壓低、耐久性好、記憶時間長、非破壞性讀取等優點，不過還沒有一種非揮發記憶體可以完全達到這些條件，而且還有很多材料可以被應用在非揮發性記憶體上(電極及氧化薄膜)，因此還有很大的研究空間。
本實驗成功以rf磁控濺鍍系統(rf magnetron sputtering)鍍製出氧化鋅(002)軸向薄膜，利用XRD繞射得知薄膜為(002)軸向，SEM及TEM則發現到薄膜有類似柱狀晶的結構，並利用白金/氧化鋅/白金的三明治結構製作出RRAM電阻式記憶體元件，觀察到電阻轉換效應，發現為雙極性轉換效應(Bipolar resistance switching)，再利用厚度不同的薄膜來觀察其對於電阻轉換機制有何影響，並比較其操作電壓、耐久性、記憶時間能力及高低電阻值分佈等特性，最後藉由氧氣氛下退火觀察與未退火薄膜電性的差異，試圖從中找出電阻轉換效應的轉換機制。

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