由於半導體元件尺寸微縮，負責傳遞元件訊號之金屬內連線電阻率隨尺寸微縮而驟升。為降低金屬內連線之電阻，釕金屬與鉬金屬被視為取代銅金屬之低電阻內連線材料。為了解尺寸微縮對於金屬內連線電阻率之影響，每一項影響因素都需要被仔細探討，如本質電阻率、電子平均自由路徑長度、電子對晶界之反射率、電子與界面散射程度。其中，釕金屬與襯墊界面發生非彈性散射對電阻率之影響仍需要被解決。因此，本實驗以不同製程方式將不同厚度之釕金屬或鉬金屬鍍在氧化物或氮化物基板上，藉此了解影響金屬電阻率隨尺寸微縮之機制。此外，採用硫粉或硫化氫氣體進行表面硫化，並在不同基板上形成硫化物層，來抑制釕金屬與襯墊界面處之非彈性散射。本實驗使用AES 、 XPS 、 Raman 、 EDS 和 TEM 對化學成分、鍵結組成和微觀結構進行分析，並使用簡化之FS-MS模型和TLM方法獲得金屬薄膜之電性。以刮痕測試量測金屬與不同襯墊之附著強度。實驗結果表明，本質電阻率受到雜質和製程缺陷影響而上升；晶界反射率由材料熔點和晶界型態決定，如晶界強度較弱或共位晶界可降低晶界反射率；界面反射散射受到鍵結強弱所影響，強鍵結增加非彈性散射。使得界面彈性散射和界面附著強度之間需要取捨。在釕金屬與襯墊層之界面間形成硫化物可以打破這種取捨，硫化層使界面發生更多彈性散射，同時又不降低界面附著度。

Ruthenium and molybdenum are being explored as potential alternatives to copper for low-resistance (low-R) interconnects, primarily due to their resistance scaling behavior. The resistivity scaling is influenced by several factors, e.g., intrinsic resistivity, electron mean free path, grain boundary reflectivity, and interfacial specularity. Among all the factors, the diffuse scattering at the Ru/liner interfaces still needed to be minimized. Hence in this study, variable film thickness of ruthenium or molybdenum films was deposited on oxide and nitride with different processes to investigate the mechanism of the resistivity scaling. Besides, the surface sulfurization with sulfur powder or H2S gas was applied to form a sulfide layer on different substrates to inhibit the diffuse scattering at Ru/liner interfaces. The chemical composition, bonding configuration, and microstructure of scaling films were characterized by AES, XPS, Raman, EDS, and TEM. The electrical properties of scaling films were determined with the simplified FS-MS models and TLM methods. The adhesion strength of ruthenium with different liners was measured with the scratch test. The experimental results indicated that the intrinsic resistivity was increased with the impurity and process defects. The grain boundary reflectivity is determined by the melting point and the grain boundary coherency. Weak grain boundaries and coincident site lattice reduce grain boundary reflectivity. The specular scattering is correlated with bonding strength. The strong bonding causes more serious diffuse scattering. The trade-off phenomenon is found between the specular scattering and interfacial adhesion strength. The sulfide layer formed in the middle of the Ru/liner interface broke the trade-off, which make the interface more specular without sacrificing the interfacial adhesion.

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