The novel material a-IGZO has been attracted much attention due to low temperature deposition, flexible, high transmission, and uniformity. As active layer, a-IGZO thin film has better reliability and higher mobility (>10cm2V-1s-1) than conventional hydrogenated amorphous silicon TFT (a-Si: H TFT). The uniformity of a-IGZO TFT is better than Low Temperature Polycrystalline Silicon TFT (LTPS TFT). a-IGZO thin film can fabricate at low temperature process. Therefore, the a-IGZO TFTs have the potential to replace a-Si: H TFT and LTPS TFT forming Active Matrix Organic Light Emitting Display (AMOLED). By different process conditions and post treatments, the characteristics of IGZO thin film can be change. The thesis studies that top-gate polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with an indium gallium zinc oxide (IGZO) nanocrystals charge trapping layer. Experimental results indicate that good characteristics of NVM with the IGZO nanocrystals charge trapping layer. The contribution of IGZO is to achieve system on panel (SOP). This can integrate such as circuits, key devices, driving circuits and memory all on glass substrate. Nonvolatile memory (NVM) is the key component to realize the system on panel. This thesis also does the novel construction of NVM (tri-gate nano wires construction) and compares the memory’s reliability with the conventional construction. Additionally, the important issues about diffusion of silicon and oxygen from silicon dioxide (SiO2) layer into IGZO nanocrystals charge trapping layer should be seriously considered as fabricating memories with SiO2 and IGZO thin-films during high temperature process.

非晶相銦鎵鋅氧化物(Amorphous InGaZnO: a-IGZO)已被受到矚目，由於它具有可低溫沉積、高透光性、可撓曲、及均勻度佳。作為主動層(Active layer)的薄膜電晶體(Thin Film Transistors: TFTs)它的載子遷移率與可靠度比傳統氫化非晶矽薄膜電晶體(a-Si:H TFT)高、以及均勻性優於低溫複晶矽薄膜電晶體(Low Temperature Polycrystalline Silicon TFT: LTPS TFT)並可以低溫下製作，因此a-IGZO薄膜電晶體具有取代氫化非晶矽薄膜電晶體與低溫複晶矽薄膜電晶體來製作主動矩陣有機發光顯示器(Active Matrix Organic Light Emitting Display: AMOLED)的潛力。藉由不同的製作條件及後續處理方式，可以改變IGZO薄膜的特性，此論文討論將IGZO奈米晶粒作為電荷儲存層製作在非揮發性記憶體(Nonvolatile Memory: NVM)上的良好特性，IGZO薄膜將幫助系統面板(System on Panel: SOP)的實現；即是將所有的周邊電路，關鍵元件，記憶體元件，驅動電路等，全部整合於玻璃基板上，非揮發性記憶體元件是實現系統面板的關鍵。此論文也製作新穎的三向閘極奈米線非揮發性記憶體元件，並將之與傳統製作元件特性做比較。此外本文意外發現二氧化矽層與銦鎵鋅氧化物奈米晶粒層的接面在高溫製程下會擴散，此現象將對記憶體元件特性造成影響，在元件製作上需要多加以考量。

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