由於氮化鎵材料有著寬能隙、高臨界電場以及高電子飽和速度，適合應用在高速及高功率元件，因此近年來以氮化鋁鎵/氮化鎵(AlGaN/GaN)材料為主的元件開始受到重視及討論，其中又以成長在矽(Si)基板的氮化鋁鎵/氮化鎵元件最為普及。儘管矽基板在特性上不如碳化矽(SiC)和藍寶石(sapphire)基板，但考量到成本以及未來有機會與成熟CMOS電路做整合，矽基板氮化鎵(GaN-on-Silicon)的研究被視為未來的科技主流之一。
本論文首先設計與製作指叉(Finger)結構氮化鋁鎵/氮化鎵蕭特基二極體，接著利用此元件進行直流量測分析與高頻S參數量測分析，試圖了解此元件的直流與高頻特性表現。其中，在元件製作方面，本論文利用電子束顯影的方式製作元件陽極，藉此縮小元件尺寸並提升元件高頻特性。在直流量測分析方面，本論文透過設計不同佈局參數的元件進行直流量測，藉此分析指叉佈局參數對直流特性的影響。此外，本論文也透過直流量測結果萃取出元件理想因子、能障高度及串聯電阻。最後得到，本論文所設計的元件，其導通電壓介於0.5~0.6V之間，崩潰電壓介於35~60V之間，受元件佈局參數影響。
在高頻S參數量測分析方面，本論文透過建立元件小訊號等效模型及大訊號等效模型，將其模擬結果與量測結果進行比對，藉此分析佈局參數對元件高頻特性的影響。最後發現，本論文所設計的最小面積元件在直流偏壓為-10V時，其fc值可達到360.9GHz，有著良好的高頻特性表現。

GaN material has the advantage of wide band-gap, high critical electric field and high electron saturation velocity, which is suitable for high speed and high power devices. Therefore, the research of GaN-based devices began to be valued and implemented in recent years. Among all the research of GaN-based devices, GaN-on-Silicon devices gain ground nowadays. Although its characteristic is not necessary than using SiC and sapphire substrate, considering cost and the compatibility of CMOS process integration, GaN-on-Silicon is expected as one of the mainstream technologies in the future.
In this thesis, we design and fabricate finger structure AlGaN/GaN SBD at first, and then we study DC and RF characteristics of the device by DC and S-parameter measurement. As for device fabrication, to scale down device area and improve its RF characteristics, we use E-beam to fabricate the anode. In terms of DC measurement, we measure device at different device parameters to find out the correlation between device parameters and device DC characteristics. In addition, we can extract device ideality factor, barrier height and series resistance by DC measurement result. Finally, affected by device parameters, we find out that the device has turn-on voltage between 0.5V and 0.6V and breakdown voltage between 35V and 60V.
As for S-parameter measurement, to investigate the relationship between device parameters and device RF characteristics, we establish the small signal model and large signal model of the device and compare simulation results to device measurement results. Finally, we figure out, when DC bias equals -10V, the fc value of the smallest device reaches 360.9 GHz, which shows good RF performance.

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