提出一種新穎製程製備Cu2ZnSn(S,Se)4 (CZTSSe)吸收層，此新穎製程即為把真空濺鍍製備的前驅層在後硒化製程中添加硫化錫粉末來形成出良好的CZTSSe吸收層。我們從成分上,結構上,表面形貌上,以及電性上探究硫化錫粉末在硒化製程中扮演的角色，最後我們發現硫化錫粉末能夠抑制錫在高溫反應跑出薄膜，並且S/S+Se的比例也能藉由添加硫化錫粉末來調控更影響了吸收層的能隙大小，除此之外，Mo(S,Se)2的厚度也藉由此方法來良好控制，最後利用此方法製備CZTSSe薄膜太陽能電池能達到7.35%的光電轉換效率。

A novel process to obtain high quality Cu2ZnSn(S,Se)4 (CZTSSe) absorber is proposed by incorporating SnS together with selenium during selenization of stacked precursors. The effects of incorporating SnS powder during selenization are investigated in terms of composition, structure, morphology and electric properties. It is demonstrated that tin loss issue has been solved and S/(Se+S) ratio which ranging from 0 to 0.25 can also be preciously controlled at the same time by tuning the amount of SnS powder during selenization process, in addition, the formation of Mo(S,Se)2 also be suppressed. The solar cells show a significant increment of open circuit voltage and filler factor due to the increasing of CZTSSe band gap and reducing the thickness of Mo(S,Se)2, respectively. Good efficiency achieved with CZTSSe absorber produced through IBSD (Ion beam Sputtering deposition) following selenization is proposed. As a result, solar cell efficiency up to 7.35% was obtained, originating from 3.73% for pure selenization without SnS powder.

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