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研究生: 王威超
Wei-Chau Wang
論文名稱: 二氧化鈦延伸式閘極離子感測場效電晶體之研究
Study of Titanium dioxide thin film for extended gate ion sensitivity field effect transistors
指導教授: 陳建瑞
Jiann-Ruey Chan
口試委員:
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年: 2004
畢業學年度: 92
語文別: 中文
論文頁數: 77
中文關鍵詞: 延伸式閘極離子感測場效電晶體離子感測場效電晶體二氧化鈦
外文關鍵詞: EGFET, ISFET, TiO2
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  • 中文摘要

    二氧化鈦延伸式閘極離子感測場效電晶體之研究

    本論文是以Dual E-Gun Evaporation System沈積Titanium Oxide (TiO2)薄膜,作為延伸式閘極離子感測場效電晶體(EGFET)的感測膜,以此進行溶液中H+離子濃度的量測。文中將討論:(1) TiO2感測膜對H+離子之擷取與元件相關電性。(2) TiO2感測膜的特性分析。

    從實驗中得知TiO2薄膜EGFET的感測度50∼74 mV/PH(T=29℃),pH值範圍為3∼9,可以證明TiO2 薄膜是很好的H+離子的感測膜。

    本論文中發現TiO2 薄膜的成分組成,當CO/CTi的比例越高的話,其感應靈敏度也會跟著上升,所以要改善TiO2 薄膜的感應靈敏度,可利用熱處理等方式提高TiO2 薄膜的含氧比例。


    目錄 摘要………………………………………………………………… 1 誌謝………………………………………………………………… 2 目錄………………………………………………………………… 3 圖目錄…………………………………………………………………4 第一章 諸論 ……………………………………………………… 6 第二章 實驗原理……………………………………………………13 2-1 ISFET理論………………….……….………………………………..13 2-2 延伸式閘極離子感測場效電晶體之原理…..……………………….20 2-3 TiO2特性探討…………………………………………..…………….24 第三章 元件製作與薄膜特性分析…………………………………34 3-1 EGFET元件製作……………………………………………………...35 3-2 TiO2 thin film 特性分析………………………………………………40 第四章 結果與討論…………………………………………………51 4-1 H+離子感測靈敏度量測結果…………………………………………51 4-2 TiO2薄膜介電常數量測結果…………………………..………….….57 4-3 TiO2薄膜電阻量測結果………………………………………………59 4-4 TiO2薄膜ESCA分析結果……………………………………………61 4-5 TiO2薄膜AFM分析結果…………………………………….....….....66 4-6 TiO2薄膜X ray繞射分析結果………………………………….…….70 第五章 結論…………………………………………………………72 第六章 參考文獻……………………………………………………73

    第六章 參考文獻

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