研究生: |
鄭兆佑 Cheng, Chao-Yu |
---|---|
論文名稱: |
多晶矽埋入式電極太陽能電池之研究 Study of Multicrystalline Silicon Solar cells with Buried-Contact Structure |
指導教授: | 王立康 |
口試委員: |
張正陽
何文章 |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 光電工程研究所 Institute of Photonics Technologies |
論文出版年: | 2012 |
畢業學年度: | 100 |
語文別: | 中文 |
論文頁數: | 54 |
中文關鍵詞: | 多晶矽 、太陽能電池 、埋入式電極 |
相關次數: | 點閱:2 下載:0 |
分享至: |
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近幾年綠色能源深受注目,帶動了太陽能電池產業的蓬勃發展,在有限的照光面積下如何達到最高的轉換效率成為了首要目標;隨著太陽電池效率與製程技術的不斷改善,其中由Stuart Wenham所提出的埋入式電極太陽電池(BCSC,buried contact solar cell)結構,與一般太陽電池不同的是利用雷射技術定義出凹槽填入電極並加上選擇性射極,不僅減少了金屬電極的遮蔽效應還有增加藍光波段吸收與減少載子復合速率的優點,明顯的提升了轉換效率。
起初的埋入式電極搭配選擇性射極結構需經過兩次的磷擴散和黃光製程,不僅耗時又會有高成本的問題;本實驗較以往所提出的BCSC不同的地方是利用濕式蝕刻與抗蝕刻膠定義圖形的方法蝕刻出凹槽,並且只需經過一次磷擴散搭配回蝕(etch back)技術製作出選擇性射極,以往較複雜的製程都被簡化了,有減少製程時間及較低成本的優點。
[1] http://cdnet.stpi.org.tw/techroom/market/energy/energy022.htm
[2] M. M. Hilali,Ajeet Rohatgi and Sally Asher,” Development of Screen-Printed
Silicon Solar Cells With High Fill Factors on 100 /sq Emitters,”IEEE
Transactions on Electron Devices,vol.51,no.6,pp.948-955,2004.
[3] 黃建昇,結晶矽太陽電池發展現況,工業材料,203期,92年11月
[4] http://www.cnyes.com/research/20080108/154532-image002.gif
[5] A. G. Aberle ,“Surface Passivation of Crystalline Silicon Solar Cells:A
Review,”Prog. Photovolt: Res. Appl.,vol.8,no. 5,pp. 473-487,2000.
[6] Bernhard Vogl, A. M. Slade, C. B. Honsberg, J. E. Cotter and S. R. Wenham ,
“Inclusion of Dielectric Films for Surface Passivation of Buried Contact Solar
Cells,” Photovoltaic Specialists Conference,pp. 327-330,2000.
[7] B. Sopori and Y. Zhang, “H-Diffusion Mechanism(s) in PECVD Nitride
Passivation of Si Solar Cells,” NCPV 1st Conf. Program Review Meeting,
Lakewood Colorado, pp. 14-17,2001
[8] I. Martin, M. Vetter, A. Orpella, J. Puigdollers, A. Cuevas and R. Alcubilla,
“Surface Passivation of P-Type Crystalline Si by Plasma Enhanced Chemical
Vapor Deposited Amorphous SiC: H Films,” Appl. Phys. Lett., vol. 79, no. 14,
49
pp. 2199-2201,2001
[9] I. Cesar,E. Granneman,P. Vermont,E. Tois,P. Manshanden, L. J. Geerligs,E. E.
Bende, A. R. Burgers,A. A. Mewe,Y. Komatsu and A. W. Weeber,” Excellent
Rear Side Passivation on Multicrystalline Silicon Solar Cell with 20 nm
Uncapped Al2O3 layer: Industrialization of ALD for Solar Cell Applications,”
Photovoltaic Specialists Conference (PVSC),pp. 44-49,2010.
[10] S. K. Dhungel, J. Yoo, K. Kim, B. Karunagaran, H. Sunwoo, D. Mangalaraj and
J. Yi,“Effect of Pressure on Surface Passivation of Silicon Solar Cell by Forming
Gas Annealing,” Mater. Sci. Semicond. Process.,vol.7,no. 4-6,pp. 427-431,2004.
[11] V. D. Mihailetchi, Y. Komatsu and L. J. Geerligs, “Nitric Acid Pretreatment for
the Passivation of Boron Emitters for N-Type Base Silicon Solar Cells,” Appl.
Phys. Lett. ,vol. 92, no. 6,063510,2008.
[12] Kyeong-Yeon Cho,II-Hwan Kim,Dong-Joon Oh, Ji-Myung,Shim,Eun-Joo,Lee,
Hyun-Woo Lee,Jun-Young Choi,Ji-Sun Kim,Jeong-Eun Shin,Soo-Hong Lee
and Hae-Seok Lee,” Improvements of Voc by Selective Emitter Pattern
Optimization in Screen Printed Crystalline Si Solar Cells,” Photovoltaic
Specialists Conference (PVSC),pp.1335-1338, 2010.
[13] A. Kress, R. Tolle, T. Bruton, P. Fath and E. Bucher,” 10 x 10 cm2 Screen
Printed Back Contact Cell with A Selective Emitter,” Photovoltaic Specialists
50
Conference, 2000. Conference Record of the Twenty-Eighth IEEE,pp. 213-
216,2000.
[14] C. B. Honsberg,J. E. Cotter,K. R. McIntosh,S. C. Pritchard,B. S. Richards and
S. R. Wenham,”Design Strategies for Commercial Solar Cells Using the Buried
Contact Technology,”IEEE Transactions on EletronDevices,vol.46,no.10,pp.
1984-1992,1999.
[15 ] W. Jooss,M. McCann,P. Fath,S. Roberts and T. M. Bruton,”Buried Contact
Solar Cells on Multicrystalline Silicon With Optimized Bulk and Surface
Passication,”3rd World Confererence on Photovollaic Energv Conversion,vol.1,
pp. 959-962,2003.
[16] M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H.
Hanafusa and Y. Kuwano, “Development of New a-Si/c-Si Heterojunction Solar
Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer),” Jpn. J. Appl. Phys. 31 ,pp. 3518-3522,1992
[17] M. Taguchi , K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K.
Uchihashi, N. Nakamura, S. Kiyama and O.Oota, “HITTM cells High-Efficiency
Crystalline Si Cells With Novel Structure,” Prog. Photovolt,vol. 8,no.5,pp. 503-
513, 2000.
[18] Chun Gong, E. V. Kerschaver, Jo Robbelein, Tom Janssens,Niels Posthuma,
51
Jef Poortmans and Robert Mertens,” Screen-Printed Aluminum-Alloyed P+
Emitter on High-Efficiency N-Type Interdigitated Back –Contact Silicon Solar
Cells,” IEEE Electron Device Letters,vol.31,no.6,pp. 576-578,2010.
[19] Chun Gong, E. V. Kerschaver, Jo Robbelein, Niels E. Posthuma, Sukhvinder
Singh,Jef Poortmans and Robert Mertens,” High Efficient N-Type Interdigitated
Back Contact Silicon Solar Cells with Screen-Printed Al-Alloyed Emitter,”
Photovoltaic Specialists Conference (PVSC),vol.14,no.6,pp. 3145-3148, 2010.
[20] I. Lee, D.G. Lim, S.H. Lee and J. Yi,” The Effects of A Double Layer Anti-
Rreflection Coating for A Buried Contact Solar Cell Application,” Surface and
Coatings Technology,vol.137,no.1,pp. 86-91,2001.
[21] S.R. Wenham, C.B. Honsberg and M.A. Green,”Buried Contact Silicon Solar
Cells,” Solar Energy Materials and Solar Cells,vol. 34,no. 1-4,pp. 101-110,1994.
[22] Ryuichi Shimokawa and Yutaka Hayashi,”Characterization of High-Efficiency
Cast-SiSolar Cell Wafers by MBIC Measurement:,Japanese Journal of Applied
Physics,vol. 27,no.5,pp.751-758,May,1988
[23] 黃惠良、曾百亨,”太陽電池 Solar Cells”,五南圖書出版公司,2008
[24] J. F. Nijs,Jozef Szlufcik,Jozef Poortmans,S. Sivoththaman and Robert P. Mertens
,”Advanced Manufacturing Concepts for Crystalline Silicon Solar Cells,”IEEE
Transactions on Electron Devices,vol.46,no.10,pp. 1948-1969,1999.
52
[25] C. T. Sah,R. N. Noyce and W.Shockley,”Carrier Generation and Recombination
in P-N Junctions and P-N Junctions Characteristics,”Proceedings of the IRE,
vol.45,no. 9,pp. 1228-1243,1957.
[26] J. G. Fossum,R. D.Nasby and S. C. Pao,"Physics Underlying the Performance of
Back-Surface-Field Solar Cells,"IEEE Transactions on Electron Devices,vol.27,
no. 4,pp. 785-791,1980.
[27] M. A. Green 著,曹昭陽、狄大衛、李秀文譯,“太陽電池工作原理,技
術與系統應用”,五南圖書出版公司,2009
[28 ] Jpseph C. C. Tsai.”Shallow Phosphorus Diffusion Profiles In Silicon,”
Proceedings Of The IEEE.vol.57,no.9,pp. 1499-1506, 1969 .
[29] 翁敏航、楊茹媛、管鴻、晁成虎著,”太陽能電池-原理、元件、材料、製程
與檢測技術”,東華書局2010出版
[30] A. Rohatgi, M. Hilali, D. L. Meier, A. Ebong, C. Honsberg, A. F. Carrol and P.
Hacke,” Self-Aligned Self-Doping Selective Emitter for Screenprinted Silicon
Solar Cell,” in Proc. Eur. Solar Energy Conf., Munich,Germany, pp.1307–1310,
2001.
[31] D. L. Meier, H. P. Davis, A. Shitiba, T. Abe and K. Kinoshita, “Self Doping
Contacts and Associated Silicon Solar Cell Structures,”in Proc.World Conf.
Photovoltaic Solar Energy Conversion,Vienna,Austria,pp.1491–1494,1998.
53
[32] D. L. Meier, H. P. Davis, R. A. Garcia, J. A. Jessup, and A. F. Carroll,“Self-
Doping Contacts to Silicon Using Silver Coated with A Dopant Source,” in Proc.
IEEE Photovoltaic Specialists Conf., Anchorage, pp. 69–74,2000.
[33] E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller and V.
Moagar Poladian, “Optimization of Front Surface Texturing Processes For
High-Efficiency Silicon Solar Cells,” Solar Energy Materials & Solar Cells,vol.
87,no. 1-4, pp. 423-431,2005.
[34] D. H. Macdonald,A. Cuevas,M. J. Kerr,C. Samundsett,D. Ruby,S. Winderbaum
and A. Leo,” Texturing Industrial Multicrystalline Silicon Solar Cells,” Solar
Energy,vol. 76,no. 1-3,pp. 277–283,2004.
[35] Young-Woo Ok, Ajeet Rohatgi, Yeon-Ho Kil, Sung-Eun Park, Dong-Hwan Kim,
Joon-Sung Lee and Chel-Jong Choi”Abnormal Dopant Distribution in POCl3-
Diffused N+ Emitter of Textured Silicon Solar Cells,” IEEE Electron Device
Letters,vol.32,no.3,pp. 351-353,2011.
[36] Kyunghae Kim, S.K. Dhungel, Sungwook Jung, D. Mangalaraj and J. Yi
“Texturing of Large Area Multi-Crystalline Silicon Wafers Through Different
Chemical Approaches for Solar Cell Fabrication,” Solar Energy Materials &
Solar Cells,vol. 92,no. 8,pp. 960– 968, 2008.
[37] 龍健華、林景熙、杜政勳、徐偉智、葉芳耀,”選擇性射極矽晶太陽電池
54
技術介紹”,工業材料雜誌281期 2010/05
[38] M. Y. Ghannam,E. Demesmaeker,J. Nijs,R. Mertens and R. Van Overstraeten,
“Two Dimensional Study of Alternative Back Surface Passivation Methods for
High Efficiency Silicon Solar Cells,” in Proc. 11th EC PVSEC, pp. 45–48,1992.
[39] C. B. Honsberg,F. Yun, A. Ebong,M. Taouk, S. R. Wenham and M. A.Green,
“685 mV Open-Circuit Voltage Laser Grooved Silicon Solar Cell,”Sol. Energy
Material and Sol. Cells, vol. 34,no. 1-4,pp. 117–123, 1994.
[40] S. R. Wenham,S. J. Robinson,X. Dai, J. Zhao,A. Wang,Y.-H. Tang,A. Ebong,
C. B. Honsberg and M. A. Green, “Rear Surface Effects in High Efficiency
Silicon Solar Cells,” in Proc. 1st WCPEC,vol. 2, pp.1278–1282,1994.