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研究生: 鄭兆佑
Cheng, Chao-Yu
論文名稱: 多晶矽埋入式電極太陽能電池之研究
Study of Multicrystalline Silicon Solar cells with Buried-Contact Structure
指導教授: 王立康
口試委員: 張正陽
何文章
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 光電工程研究所
Institute of Photonics Technologies
論文出版年: 2012
畢業學年度: 100
語文別: 中文
論文頁數: 54
中文關鍵詞: 多晶矽太陽能電池埋入式電極
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  • 近幾年綠色能源深受注目,帶動了太陽能電池產業的蓬勃發展,在有限的照光面積下如何達到最高的轉換效率成為了首要目標;隨著太陽電池效率與製程技術的不斷改善,其中由Stuart Wenham所提出的埋入式電極太陽電池(BCSC,buried contact solar cell)結構,與一般太陽電池不同的是利用雷射技術定義出凹槽填入電極並加上選擇性射極,不僅減少了金屬電極的遮蔽效應還有增加藍光波段吸收與減少載子復合速率的優點,明顯的提升了轉換效率。
    起初的埋入式電極搭配選擇性射極結構需經過兩次的磷擴散和黃光製程,不僅耗時又會有高成本的問題;本實驗較以往所提出的BCSC不同的地方是利用濕式蝕刻與抗蝕刻膠定義圖形的方法蝕刻出凹槽,並且只需經過一次磷擴散搭配回蝕(etch back)技術製作出選擇性射極,以往較複雜的製程都被簡化了,有減少製程時間及較低成本的優點。


    第一章 序論 .................................................................................................................... 1 1-1太陽能電池現況 .................................................................................................... 1 1-2文獻回顧 ................................................................................................................... 2 1-3研究構想 ................................................................................................................... 4 1-4論文架構 ................................................................................................................... 4 第二章 研究理論 ........................................................................................................ 6 2-1 基本半導體物理 ................................................................................................ 6 2-1.1 光與半導體 ............................................................................................................ 6 2-1.2 直接與間接能隙半導體 ........................................................................................ 6 2-1.3 載子復合 ................................................................................................................ 8 2-2 太陽能電池基本原理 ...................................................................................... 9 2-2.1 太陽光譜 ................................................................................................................ 9 2-2.2 太陽電池工作原理 .............................................................................................. 11 2-3 太陽能電池等效電路 .................................................................................... 12 2-4 太陽電池的特性與效率............................................................................... 14 2-5 效率的損失 ........................................................................................................ 17 2-6 矽太陽電池的設計 ......................................................................................... 18 2-6.1 光生載子的收集機率 .......................................................................................... 18 2-6.2 接面深度 .............................................................................................................. 19 2-6.3 死層效應 .............................................................................................................. 19 2-6.4 背面電場 .............................................................................................................. 20 2-6.5 選擇性射極結構 .................................................................................................. 21 第三章 實驗方法與流程 ..................................................................................... 23 3-1 實驗主要架構討論 ......................................................................................... 23 3-1.1 表面粗糙化 .......................................................................................................... 24 3-1.2 回蝕 ...................................................................................................................... 24 3-2 實驗流程 ............................................................................................................. 25 3-2.1網印抗蝕刻膠定義圖形 ....................................................................................... 25 3-2.2 groove etch &丙酮清洗........................................................................................ 25 3-2.3 RCA clean ............................................................................................................ 27 3-2.4 texturization .......................................................................................................... 27 3-2.5 N+ layer diffusion ................................................................................................. 28 3-2.6 網印抗蝕刻膠保護電極區 .................................................................................. 28 3-2.7 etch back&丙酮清洗 ............................................................................................ 29 3-2.8 AR coating ............................................................................................................ 29 3-2.9 screen-print Ag & Al ............................................................................................ 30 3-2.10 co-fired ............................................................................................................... 30 3-2.11 isolation .............................................................................................................. 31 第四章 實驗結果與討論 ..................................................................................... 32 4-1 表面結構粗糙化分析討論 ......................................................................... 32 4-1.1紫外光-可見光光譜儀 .......................................................................................... 32 4-1.2 SEM與效率 .......................................................................................................... 35 4-2 利用回蝕製作選擇性射極 ......................................................................... 37 4-2.1埋入式電極討論 ................................................................................................... 37 4-2.2回蝕後片電阻值與效率討論 ............................................................................... 41 4-2.3回蝕後的表面形貌與擴散深度 ........................................................................... 43 第五章 結論 .................................................................................................................. 46 參考文獻 ................................................................................................................ 48

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