本研究提出游標尺式懸浮閘極場效應電晶體之位移量感測器，並且整合於微機電系統之中，用於提供靜電式梳狀致動器之位置迴授訊號，其優點為感測的架構單純、高解析度，以及數位式的感測方式，不但省去了後端再由類比轉數位的複雜電路，也節省了處理時間。
懸浮式閘極電晶體的操作原理，乃是透過輸出之汲極電流而感測懸浮閘極之位移量。本研究呈現游標尺式懸浮閘極電晶體的設計與分析，並闡述其操作原理與特性。另外，為了驗證系統整合的可能性，本研究亦設計一組靜電式梳狀致動器，並對其靜態與動態特性皆以數值模擬軟體進行驗證。
本研究的製程規劃以兩片晶片分別完成，再用XYZ平台加以組合。預計未來的工作，將平台架設好，並予以量測，最後期望量測結果能和模擬所得到的結果加以比較分析並做探討。

[1] W. C. Tang, T. H. Nguyen, and R. T. Howe, “Laterally driven
polysilicon resonant microstructures,” Sensors and Actuators, A:
Physical, vol. 20, pp. 25-32, 1989.

[2] T. Harness and R. R. A. Syms, “Characteristic modes of electrostatic
comb-drive X-Y microactuators,” Journal of Micromechanics and
Microengineering, vol. 10, pp. 7-14, 2000.

[3] C. Marxer, P. Griss, and N. F. de Rooij, “Variable optical attenuator
based on silicon micromechanics,” IEEE Photonics Technology
Letters, vol. 11, pp. 233-235, 1999.

[4] W. H. Juan and S. W. Pang, “High-aspect-ratio Si vertical
micromirror arrays for optical switching,” Journal of
Microelectromechanical Systems, vol. 7, pp. 207-213, 1998.

[5] M. A. Haque, M. T. A. Saif, “Microscale materials testing using
MEMS actuators,” Journal of Microelectromechanical Systems, vol.
10, pp. 146-152, 2001.

[6] P. Cheung, R. Horowitz, and R. T. Howe, “Identification, position
sensing, and control of an electrostatically-driven polysilicon
microactuator,” Proceedings of the IEEE Conference on Decision and
Control, vol. 4, pp. 3545-3550, 1995.

[7] Y. Sun, D. Piyabongkarn, A. Sezen, B. J. Nelson, and R. Rajamani,
“A high-aspect-ratio two-axis electrostatic microactuator with
extended travel range,” Sensors and Actuators, A: Physical, vol.
102, pp. 49-60, 2002.

[8] A. A. Kuijpers, R. J. Wiegerink, G. J. M. Krijnen, T. S. J. Lammerink,
and M. Elwenspoek, “Capacitive long-range position sensor for
microactuators,” Proceedings of the IEEE International Conference
on Micro Electro Mechanical Systems, pp. 544-547, 2004.

[9] B. Borovic, C. Hong, A. Q. Liu, L. Xie, and F. L. Lewis, “Control of a
MEMS optical switch,” Proceedings of the IEEE Conference on
Decision and Control, pp. 3039-3044, 2004.

[10] L. Wang, J. M. Dawson, L. A. Hornak, P. Famouri, and R.
Ghaffarian, “Real-time translational control of a MEMS comb
resonator,” IEEE Transactions on Aerospace and Electronic Systems,
vol. 40, pp. 567-575, 2004.

[11] I. H. Song and P. K. Ajmera, “Differential laterally movable gate
FETs (LMGFETs) as a position sensor,” Proceedings of SPIE - the
International Society for Optical Engineering, vol. 5389, pp.
267-273, 2004.

[12] H. Toshiyoshi, M. Goto, M. Mita, H. Fujita, D. Kobayashi, G.
Hashiguchi, J. Endo, and Y. Wada, “Fabrication of micromechanical
tunneling probes and actuators on a silicon chip,” Japanese Journal of Applied Physics, vol. 38, pp 7185-7189, 1999.

[13] R. Legtenberg, A. W. Groeneveld, and M. Elwenspoek, “Comb-drive
actuators for large displacements,” Journal of Micromechanics and
Microengineering, vol. 6, pp. 320-329, 1996.

[14] J. D. Grade, H. Jermanl, and T. W. Kenny, ”Design of large deflection electrostatic actuators,” Journal of Microelectromechanical Systems, vol. 12, pp. 335-343, 2003.

[15] G. Zhou and P. Guangya, “Tilted folded-beam suspension for
extending the stable travel range of comb-drive actuators,” Journal of
Micromechanics and Microengineering, vol. 13, pp. 178-183, 2003.

[16] H. C. Nathanson, W. E. Newell, R. A. Wickstrom, and J. R. Jr. Davis,
“The resonant gate transistor,” IEEE Transactions on Electron
Devices, vol. 14, pp. 117-133, 1967.

[17] A.Yoshikawa and T. Suzuki, “Properties ofmovable-gate-field
-effect structure as an electromechanical sensor,” Journal of
Acoustical Society of America, vol. 64, pp. 725-730, 1978.

[18] J. T. Suminto and W. H. Ko, “Pressure-sensitive insulated gate
field-effect transistor (PSIGFET),” Sensors and Actuators, A:
Physical, vol. 21, pp. 126-132, 1990.

[19] R. S. Jachowicz and Z. M. Azgin, “FET pressure sensor and iterative
method for modelling of the device,” Sensors and Actuators, A:
Physical, vol. 97-98, pp. 369-378, 2002.

[20] E. Hynes, M. O'Neill, D. McAuliffe, H. Berney, W. A. Lane, G.
Kelly, M. Hill, “Development and characterization of a surface
micromachined FET pressure sensor on a CMOS process,” Sensors
and Actuators, A: Physical, vol. 76, pp. 283-292, 1999.

[21] M. Fernandez-Bolanos, N. Abele, V. Pott, D. Bouvet, G-A. Racine, J.
M. Quero, A. M. Ionescu, “Polyimide sacrificial layer for SOI
SG-MOSFET pressure sensor,” Microelectronic Engineering, vol.
83, pp. 1185-1188, 2006.

[22] C. Steinbrüchel, “The mechanical field effect transistor: A new force sensor,” The Journal of Vacuum Science and Technology A, vol. 7, pp. 847-849, 1989.

[23] J. A. Plaza, M. A. Benitez, J. Esteve, and E. L. Tamayo, “New FET
accelerometer based on surface micromachining,” Sensors and
Actuators, A: Physical, vol. 61, pp. 342-345, 1997.

[24] Y. Yee, J. U. Bu, K. Chun, and J. W. Lee, “An integrated digital
silicon micro-accelerometer with MOSFET-type sensing elements,”
Journal of Micromechanics and Microengineering, vol. 10, pp.
350-358, 2000.

[25] P. K. Ajmera, I. H. Song, “Laterally movable gate FET (LMGFET)
for on-chip integration of MEMS with electronics,” Proceedings of
SPIE - the International Society for Optical Engineering, vol. 4334,
pp. 30-37, 2001.

[26] W. Olthuis, “Chemical and physical FET-based sensors or variations
on an equation,” Sensors and Actuators, B: Chemical, vol.105, pp.
96-103, 2005.

[27] I. Eisele and M. Burgmair, “Work function based field effect devices
for gas sensing,” Proceedings of the Conference on Optoelectronic
and Microelectronic Materials and Devices, pp. 285-291, 2000.

[28] T. Hirano, T. Furuhata, and K. J. Gabriel, “Design, Fabrication, and Operation of Submicron Gap Comb Drive Microactuator,” Journal of Microelectromechanical System, vol. 1, pp. 52-59, 1992.

[29] R. Legtenberg, A. W. Groeneveld, and M. Elwenspoek, “Comb
Drive Actuators for Large Displacement, ” Journal of
Micromechanics and Microengineering, vol. 6, pp. 320-329, 1996.

[30] H. Xie, Y. Pan, and G. K. Fedder, “A CMOS-MEMS mirror with
curled-hinge comb drives,” Journal of Microelectromechanical
Systems, vol. 12, pp. 450-457, 2003.