在本論文中，我們運用不同的電子性質的過渡類金屬氧化物，可提供一個獨特的方式進而降低金屬層和有積層之間電荷注入所產生的能障差。當金屬氧化物薄膜夾在金屬和有機半導體之間時，其根本方法是藉由有機膜的摻雜濃度來控制接面間的電荷注入。首先，我們使用氧化鉬(MoO3) 和鋁作為射極端的電極來製作有機基極調制電晶體(OBMT)，然後置入一層碳酸銫層(Cs2CO3)作為基極電極和有機層之間的緩衝層。根據氧化鉬(MoO3)的最佳化厚度和碳酸銫 (Cs2CO3)的最佳化厚度，當VB和VCE同時操作在 - 5伏特時，其元件的抵補電壓將小於-1伏特。接下來我們在銦錫氧化物(ITO)塗佈層於玻璃基板上製作了倒置結構的有機基極調制電晶體(OBMT)，其真空度約為 10-6托耳。該元件具備優氧化鉬薄(MoO3)膜的最佳化厚度，操作在VB = - 5伏特時呈現出低於 - 0.5伏特的抵補電壓。最後，我們製作一個有機發光三極體，其量測操作在VCE和VB都是- 7伏特，光譜的最佳化厚度發射中心在520奈米和亮度為13.76 cd/m2。

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