摘要
本論文以低溫的製程將有機薄膜電晶體製作於軟性塑膠基板上，以室溫沉積Parylene C作為塑膠基板的阻氣層與介電層，旋塗P3HT作為有機半導體層，再利用自製的矽遮罩用以沉積汲極源極金屬電極。另在元件製作完成後，觀察其加熱與否以及置放於空氣的時間長短對元件電性的影響。
由實驗結果得知，Parylene C已明顯的達到阻氣效果，同時也降低塑膠基板的表面粗糙度；而parylene C亦為良好的絕緣材料。另外，在閘極金屬的兩端鍍以鈦作為黏著層，成功的解決parylene C與鋁黏著度差的問題。在自製的矽光罩方面，則以矽基板為主體，氮化矽為主要的遮罩，並於元件上鍍出的最小線寬為8μm。
在旋塗完P3HT後分為兩種製程，一為未加熱的情況下，元件的載子遷移率為1.8×10-4cm2/v-s；另一個為經過加熱80℃、2小時後的情況下，元件的載子遷移率提升至8.8×10-4 cm2/v-s ，Ion/Ioff比也明顯提升，載子遷移率上升了約略5倍，Ion/Ioff上升了將近100倍。由I-V電性量測得知，暴露在空氣中的時間越久(30min~14days)，P3HT電晶體的特性衰減的越嚴重。因此，由實驗結果推論可能是P3HT吸收空氣中的氧氣與水氣而造成此種現象。

Abstract
In this thesis, thin film transistor was fabricated on the soft plastic substrate with low temperature. First, we deposited Parylene C at room temperature as gas barrier and dielectric layer. Secondly, we spun coating P3HT as organic semiconductor layer. Finally, we deposited both source and drain electrodes defined by our self-made silicon shadow mask. After fabricating the transistor, I-V characteristic were measured, the degradation study was also investigated.
As a result of this experiment, Parylene C had not only distinctly isolated the air but also reduced the surface roughness of the plastic base plate. From electrical measurement, Parylene C is a good insulating material. Titanium was deposited as adhesion layer and solved the adhesion problem for Parylene C and aluminum. For The pattern defining, shadow mask was developed. Two different specimen of P3HT were then spun on the Parylene C. The as-deposited sample showed the mobility 1.8×10-4cm2/v-s. The sample with annealing processes at temperature 80oC for 2 hours improved the mobility about 8.8×10-4 cm2/v-s. So did the Ion/Ioff ratio. The transistor with gate length of 8μm were then completed. I-V characteristic of the degradation of P3HT transistor was also studied after various air-exposure time 30 minutes to 14 days. It might related to the absorption of the oxygen or water in thin film P3HT.

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