CeO2 ( 二氧化鈰 ) 可應用於超導元件中YBCO ( yttrium barium copper oxide, 釔鋇銅氧 ) 和Sapphire ( 藍寶石, α-Al2O3 ) 間之緩衝層，與SOI ( silicon on insulator, 絕緣矽晶薄膜基板 ) 元件中之絕緣層。同時也有文獻報導可藉由摻雜金屬元素調整CeO2之晶格常數與改善薄膜之結晶性。在本研究中，我們利用自己組裝的MOCVD ( metal organic chemical vapor deposition, 有機金屬化學蒸鍍 ) 設備來成長CeO2與CeO2：La薄膜，前驅物為Ce(tmhd)4與La(tmhd)3。鍍膜主要調整參數有前驅物的溫度、基板溫度、載入氣體 ( carrier gas ) 流量及製程壓力。實驗結果顯示晶格常數隨La添加量增加而增加。且添加La ( 鑭 ) 之後CeO2薄膜的優選方向為 [ 200 ]，使得結晶性更好了。經高溫退火後，不但薄膜的結晶性變得更好也可繼續成長介於CeO2：La薄膜與矽晶圓間之自然氧化層 ( native oxide ) 厚度。

The metal organic chemical vapor deposition ( MOCVD ) of several cerium-based oxides has been studied in order to prepare buffer layers tailored to the epitaxial growth of oxide. Due to the similarity of the crystal structure and the lattice constant of CeO2 to those of Si, there have been many attempts to grow single crystal epitaxial layers of CeO2 on Si substrate in order to realized a silicon-on-insulation ( SOI ) structure by deposition methods. It has been shown that ceria-based oxide film with a sufficiently wide variation of lattice constant could be prepared. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 : La thin film had a column texture of polycrystal structure. The crystallinity and orientation were characterized by X-Ray diffraction (XRD). The film was polycrystalline and preferentially orientated to the <100> direction. Annealing at 1000℃ in O2 atmosphere for 30 min. increased the thickness of SiO2 between CeO2 : La thin film and Si substrate.

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