本研究針對射頻領域之應用，實現壓電式微機電薄膜共振器的設計與研製。壓電式原理可實現微機電元件的多種應用，包含共振器、振盪器、濾波器，以及高階頻率產生單元等之設計與開發。本研究亦針對共振器的材料、製程，以及其線性及非線性之特性進行詳細的探討，以應用於未來共振式感測元件的開發。
藉由去除傳統共振器上的壓電及金屬材料層，並搭配電極的設計，本研究之方法能有效激發出各種不同的高性能模態，其中包含過往無法在壓電式薄膜共振器上實現的模態。此項全新的研究克服了傳統設計中，所面臨到的電荷消除效應、金屬負載過多，以及低品質因數(Quality Factor)等問題。本研究所開發之共振器於中心頻率58.5 MHz下，其品質因數可達58,500，為目前所有氮化鋁共振器文獻中的最佳性能指標。而將此方法延伸應用至其他的模態設計中，品質因數皆可達20,000 ~ 40,000的水準，優於傳統壓電式微機電共振器數倍。此外，本研究亦藉由特殊支撐樑的設計，實現了透過單一共振器形成窄頻帶通濾波器，於中心頻率 20.62 MHz下具備相當平坦的通帶，在僅有18 kHz的頻寬中(0.087% Bandwidth)，具有39 dB的高帶阻抑制能力(Stopband Rejection) 、4 dB的低插入損耗(Insertion Loss)，以及小於0.1 dB的帶通漣波。本研究針對兩種不同的模態(Wine-glass and Lamé mode)實現高性能振盪器，於閉迴路量測中，其相位雜訊(Phase Noise)在離中心頻率1 kHz分別具有-124.5 dBc/Hz 及 -119.4 dBc/Hz的表現。
本研究另提出了鋯鈦酸鉛(PZT)壓電式共振器的設計結構，於開迴路的量測條件下，運用其極佳的機電耦合係數及既有的非線性行為，成功激發出各種可控之高階振盪模態。本研究開發之非線性行為共振器，為一基於全電性整合之晶片級微機電系統的高階諧波產生器，透過晶片集成將尺寸微縮的特性使其更加具備多種應用。此外，本研究為首位於激發高階模態的狀態中，運用一CMOS相容之低電壓，操作單一激振頻率，以形成超過100個不同高階倍頻。
為使射頻通信系統具備更高效的性能，環境溫度監測為必要的項目。在研究所開發之微機電共振器的線性及非線性行為後，本研究開發出一四端口環形之多模態壓電式共振器，主要應用於環境溫度監控。其以共振器的雙模態進行溫度控制，並具備良好的品質因數(~ 6,000)及極高的頻率溫度係數差異(TCF ~ 8.5 ppm/K)，有機會實現一超高解析度之微機電共振式溫度感測器。

This work presents the design and realization of Thin film Piezoelectric-on-Substrate (TPoS) MEMS resonators for Radio Frequency applications. Piezoelectric transduction scheme is used to realize MEMS devices for a range of applications, mainly focusing on the design of resonator, oscillator, filter, frequency synthesizer, and spatial modulator. A brief outlook into inertial sensor applications is also introduced. The thesis covers both the linear and nonlinear MEMS study in detail with a special focus on device engineering and material selection.
In this thesis, an innovative technology to improve and enable the bulk mode excitation has been successfully demonstrated. By the elimination of the piezoelectric thin film and metal coverage over the bulk mode, a wide range of existing modes and also numerous high performance new and unconventional modes can be excited efficiently. This new approach successfully overcomes the issues of charge cancellation and excessive metal loading issues faced by traditional bulk mode resonators. Using this new support transducer topology, an extremely high quality factor (Q) of 58,500 has been attained at 58.5MHz, and it is the highest Figure of Merit achieved on any Aluminum Nitride-on-Silicon platform. The new transduction scheme when extended to several modes exhibit an average quality factor in the range of 20,000-40,000 which is several folds higher than the general Q of traditional piezoelectric MEMS based resonators. Additionally, using the support transducer topology a single resonator based channel select filter has been successfully demonstrated. At 20.62 MHz, the TPoS MEMS filter has an extremely flat passband and a narrow bandwidth of 18 kHz (0.087% BW), a 4dB Insertion Loss with a 39dB Stop Band Rejection and less than 0.1dB passband ripple. Closed-loop measurements were conducted to estimate the Phase Noise performance of resonators. Phase noise of -124.5dBc/Hz and -119.42dBc/Hz at 1 kHz offset were measured for improvised Wine-glass and Lamé mode resonators respectively.
The high coupling coefficient, inherent nonlinearity due to domain wall motion, and structural engineering of the Lead Zirconate Titanate (PZT) thin film material based resonator have been explored to attain a very high count of controllable higher-order harmonics of the fundamental resonance frequency when operated in an open-loop configuration. A fully electrically interfaced chip-scale Micro-Electro-Mechanical System based higher-order harmonic generator has multitudes of applications as it can simultaneously facilitate monolithic integration with on-chip electronics and offer microscopic footprint. The first demonstration of a record-high harmonics generation over 100 tones using a flexural mode micro resonator operating in an uncontrolled environment at CMOS compatible voltage levels is reported.
After exploring new linear and nonlinear MEMS resonators, the research is focused on developing multi-mode resonator that can be used for sensing ambient temperature drift. For efficient RF communication system performance, it is highly necessary to have a system temperature monitoring system. A novel four-port ring resonator that can simultaneously enable dual-mode operation with a good quality factor (~6,500) and high TCF (~9ppm/K) difference, which can serve as a strong candidate for a temperature sensor has been developed in this work.

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