奈米雙晶銅薄膜成功地藉由非平衡磁控濺鍍系統製備完成，其高硬度高導電率的特性使其成為未來半導體工業中interconnect的理想候選人，而在半導體製程上，在鍍著interconnect之前會先鍍著一層鈦當作黏著層，在此次實驗中，也將會探討此鈦介層對於奈米雙晶銅的性質之影響。
從TEM及FIB的觀察中我們發現了三種不同方向的雙晶，一種跟試片的表面夾70度角，另一種跟試片的表面夾54.5度角，最後一種是平行於是片表面；在比較有鈦介層跟無鈦介層的試片之後我們發現，鈦介層會促進銅(111)相的生長進而使70度角跟平行於是片表面的這兩種雙晶比例增高；而藉由改變基材到靶材的距離，可使鍍膜速率有顯著的改變進而使傳遞到成長中的薄膜的每單位面積的能量改變，而此能量的增加可以讓原子有更高的機會移動到平衡的位置，而讓原子堆積與排列得更好，使得薄膜有更高的硬度；而升高起始的鍍膜溫度將會使雙晶的生成數量減少，進而降低硬度。
另一方面，我們也對奈米雙晶銅隨著薄膜厚度的變化進行了研究，發現到殘餘應力與硬度都會隨著厚度改變而有變化，而其中硬度與殘餘應力呈現一個正相關；另外，生成的雙晶的方向也隨著厚度而有變化，在膜厚小於600nm的時候，並沒有觀察到雙晶的生成，但之後隨著膜厚增加，逐漸有70度角跟54.5度角的雙晶生成，而後又繼續增加厚度才發現有平行的雙晶生成，而這些雙晶的生成可能是藉由壓應力的釋放造成。
此外，雙晶的生成也會影響腐蝕的速率，因為雙晶與晶界的交會處有機會形成一低能量的區間，而此低能量的區間較不容易腐蝕，因此，能與晶界有比較多交會處的平行的雙晶有比較好的抗腐蝕性。

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