Y2O3乃是高介電材料中備受矚目的材料之一，其擁有高介電常數(K=15~18)，高ΔEC(2~3Ev)，界面熱穩定性佳，低漏電流等優點，但薄膜本身結晶溫度不夠高，在高溫退火後無法維持非晶質結構，故不利於製作非晶質薄膜，然而高介電非晶薄膜應用於閘極氧化層的研究中，鋁酸鹽(MxAl1-xOy)乃是最受矚目的研究方向之一，如: Zr1-xAlxOy、Hf1-xAlxOy，其研究結果顯示可擁有不錯的介電常數，且在一般二元材料中添加Al2O3，可提升其結晶溫度，並有助於抑制漏電流發生，因此本研究方向乃是選擇為(Ｙ2O3)1-x(Al2O3)x作為研究對象，探討添加Al2O3的含量對薄膜結晶溫度與電性方面的影響．
　本實驗乃採用射頻磁控濺鍍法在p-Si(100)基板上鍍覆Y1-xAlxO3 (x=0~0.58)薄膜，其主要探討的重點主要分為四個部分:一.薄膜退火前後之結晶狀態分析與討論．二.薄膜之表面形貌分析與討論．三.閘極電容退火前後之介電特性分析與討論．四.閘極電容退火前後之漏電流特性分析與討論．
實驗結果發現增加薄膜中Al的含量有助於提升薄膜結晶溫度，並且可藉由抑制結晶薄膜之結晶化程度，降低其薄膜表面粗糙度，在電性方面之表現，結果顯示增加薄膜中Al的含量將造成介電常數呈現下降趨勢，並有助於抑制漏電流的發生，當Al含量為23%時，在875℃下、退火10min仍可以維持非晶質結構，膜厚250nm之薄膜其介電常數為11.49，且由於界面層電容串聯效應，膜厚10nm之薄膜其介電常數僅5.3，在E=1MV/cm時，其漏電流密度為3.42×10-8 A/cm2．薄膜經過高溫熱退火後，可改善其C-V遲滯現象，並且隨著退火溫度的提升其平帶電壓呈增加趨勢，且造成薄膜之整體單位面積電容值下降，此乃因為界面層增加造成之影響，故隨退火溫度上升其漏電流密度呈現下降趨勢。

參考文獻
第一章
【1】G.D.Wilk,R.M.Wallace,and J.M.Anthony,J.Appl.Phys. 89,
5243(2001)
【2】S. H. Lo et al., IEEE Electron Device Lett.,EDL-18,pp.
209-211 (1997).
【3】G. Timp et al., IEDM Tech. Digest, pp.615-618 (1998).
【4】G. Timp et al., IEDM Tech. Digest, pp.930-932 (1997).
【5】Y.Ma,Y.Ono,L.Stecker,D.R.Evans,andS.T.Hsu,Tech.Dig.-Int
Electron Devices Meet.,149(1999)
【6】 Manchanda,M.L.Green,R.B.vanDover,M.D.Morris,A.Kerber,Y
Hu,J.P.Han,P.J.Silve rman,T.W.Sorsch,and G Weber et
al.Tech.Dig.-Int Electron Device Meet,23(2000)
【7】L. Ragnarsson, S. Grha, M. Copel, E. Cartier,N.A. Bojarczuk,
J. Karasinski:Appl. Phys. Lett. 78, 4169 (2001)
【8】J. Kwo,a) M. Hong, A. R. Kortan, K. T. Queeney, Y. J. Chabal,
J. P.Mannaerts, T.Boone,J.J.Krajewski, A. M. Sergent,
and J.M.Rosamilia ,Appl.Phys.Lett.,Vol.77,No.1,3 July
2000
【9】5W. M. Cranton, D. M. Spink, R. Stevens, and C. B. Thomas,
Thin Solid Films 226,156(1993)
【10】R. H. Horng, D. S. Wuu, J. W. Yu, and C. Y. Kung, Thin
Solid Films 289,234 (1996).
【11】A. F. Jankowski, L. R. Schrawyer, and J. P. Hayer, J. Vac.
Sci. Technol. A11, 1548 (1993).
【12】A. C. Rastogi and R. N. Sharma, J. Appl. Phys.71,5041
(1992)
【13】A. C. Rastogi and R.N.Sharma,Semicond.Sci.Technol.16,641
(2001).
【14】J.Robertson., Applied Surface Science190(2002)2-10
【15】P. W. Peacocka) and J. Robertson,J.Appl.Phys.92,4712
(2002)
【16 】K. J. Hubbarda)and D.G.Schlom,J.Mater.Res.,11,
2757(1996)
第二章
【1】李雅明，〝固態電子學〞， p.161~166
【2】L.Hench and J.West,Pronciples of electronic
ceramics,wiley,1990
【3】Yuan Taur, Tak H. Ning, 〝Fundamentals of Modern VLSI
Devices〞, p.82
【4】RobertF.Pierret＂Semiconductor Device Fundamental＂
【5】National Institute of Standards and Technology
Semiconductor Electronics Division Gaithersburg, MD 20899
【6】J.Robertson., Applied Surface Science190(2002)2-10
【7】P. W. Peacocka) and J. Robertson,J.Appl.Phys.92,4712
(2002)
【8】E.P. Gusev, M. Copel, E. Cartier, I.J. Baumvol, C. Krug,
M.A. Gribelyuk: Appl. Phys. Lett. 76, 176 (2000)
【9】Krug C, da Rosa E B O, de Almeida R M C, Morais J,Baumvol
I J R, Salgado T D M and Stedile F C 2000 Phys.Rev. Lett.
85 4120
【10】Copel M, Gribelyuk M A and Gusev E 2000 Appl. Phys. Lett.76
436
【11】Bai WP, Lu N, Kwong DL,IEEE ELECTRON DEVICE LETTERS 26
(6): 378-380 JUN 2005
【12】W. Zhu, T. P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers,
M. Gibso,and T. Furukawa, Tech. Dig.-Int. Electron
Devices Meet. 2001, 20.4.1~2001!.
【13】Nagasato Y, Ueno T,JAPANESE JOURNAL OF APPLIED PHYSICS
PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 44 (4A):
1667-1670 APR 2005
【14】Zhu J, Li YR, Liu ZG,JOURNAL OF PHYSICS D-APPLIED PHYSICS
37 (20): 2896-2900 OCT 21 2004
【15】Inoue T and Nakamura T 1999 Thin Solid Films 344 594
【16】JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS
SHORT NOTES & REVIEW PAPERS 41 (4B): 2480-2483 APR 2002
【17】A. Chin, Y. H. Wu, S. B. Chen, C. C. Liao, and W. J. Chen,
Proceedings of the Technical Digest VLSI Symposium 2000,
Vol.16.
【18】Kim Y, Miyauchi K, Ohmi S, et al., MICROELECTRONICS
JOURNAL 36 (1): 41-49 JAN 2005
【19】L. Ragnarsson, S. Grha, M. Copel, E. Cartier,N.A.
Bojarczuk, J. Karasinski:Appl. Phys. Lett. 78, 4169
(2001)
【20】J. Kwo,a) M. Hong, A. R. Kortan, K. T. Queeney, Y. J. Chabal,
J. P.Mannaerts, T.Boone,J.J.Krajewski, A. M. Sergent,
and J.M.Rosamilia ,Appl.Phys.Lett.,Vol.77,No.1,3 July
2000
【21】5W. M. Cranton, D. M. Spink, R. Stevens, and C. B. Thomas,
Thin Solid Films 226,156(1993)
【22】R. H. Horng, D. S. Wuu, J. W. Yu, and C. Y. Kung, Thin
Solid Films 289,234 (1996).
【23】A. F. Jankowski, L. R. Schrawyer, and J. P. Hayer, J. Vac.
Sci. Technol. A11, 1548 (1993).
【24】A. C. Rastogi and R. N. Sharma, J. Appl. Phys.71,5041
(1992)
【25】A. C. Rastogi and R.N.Sharma,Semicond.Sci.Technol.16,641
(2001).
【26】A. Dimoulas, A.Travlos,G.Vellianitis,N.Boukos,and K.
Argyropoulos,J. Appl.Phys. 90, 4224 (2001).
【27】A. Dimoulas, A. Travlos, G. Vellianitis, N. Boukos, and
K. Argyropoulos,J. Appl.Phys. 90, 4224 (2001)
【28】H. J. Gao, D. Kummar, K. G. Cho, P. H. Holloway, R. K.
Singh, X. D.Fan, Y. Yan, and S. J. Pennycook, Appl. Phys.
Lett. 75, 2223 (1999).
【29】M. Putkonen, T. Sajavaara, L. S. Johansson, and L.
Niinisto, Chem. Vap.Deposition 7, 44 (2001)
【30】L.-A. Ragnarsson, S. Guha, M. Copel, E. Cartier, N. A.
Bojarczuk,and J.Karasinski,Appl.Phys.Lett.78,4169
(2001).
【31】K. J. Hubbard and D. G. Schlom,J.Mater.Res.11, 2757
(1996).
【32】J. Robertson, MRS Bull. 27, 217 (2002.)
【33】A. Dimoulas, G. Vellianitis, A. Travlos, V. Ioannou, and
A. G. Nasiopoulou ,J. Appl.Phys. 92, 426 (2002).
【34】Raffaella Lo Nigro,a) Vito Raineri, and Corrado Bongiorno ,
Appl.Phys.Lett., Vol.83, No. 1, 7 July 129(2003)
【35】Roy P K and Kizilyalli I C 1998 Appl. Phys. Lett. 72 2835
【36】G.B.Alers,D.J.Werder,Y.Chabal, H .C. Lu, E. P. Gusev, E.
Gaarfunkel ,T.Gustafsson,R.S.Urdahl:Appl.Phys.Lett. 73,
1517 (1998)
【37】van Dover R B 1999 Appl. Phys. Lett. 74 3041 G.B. Alers,
D.J.Werder, Y. Chabal, H.C. Lu, E.P. Gusev, E.
Gaarfunkel,
【38】T. Gustafsson, R.S. Urdahl: Appl. Phys.Lett.73,1517
(1998)
【39】B. Cheng et al., IEEE Trans. Electron Devices, ED-46,
pp.1537-1544 (1999)
【40】X. B. Lu,a) X. Zhang, and R. HuangH. B. Lu, Z. H. Chen,
W. F. Xiang, M. He, and B. L. ChengH. W. Zhou, X. P. Wang,
and C. Z. Wang B. Y. Nguyen,Appl. Phys. Lett., Vol. 84,
No. 14, 5 April 2004
【41】G. D. Wilk and R. M. Wallace, Appl. Phys. Lett.76,112
(2000)
【42】J. J. Chambers and G. N. Parsonsa), J. Appl. Phys.,Vol.
90, 918(2001)
【43】K. J. Hubbarda)and D.G.Schlom,J.Mater.Res.,11,
2757(1996)
【44】Zhang NL, Song ZT, Xing S, et al.，MICROELECTRONIC
ENGINEERING 66 (1-4): 427-432 APR 2003
【45】Lysaght PS, Chen PJ, Bergmann R, et al JOURNAL OF NONCRYSTALLINE
SOLIDS 303 (1): 54-63 MAY 1 2002
【46】G.D.Wilk,R.M.Wallace,and J.M.Anthony,J.Appl.Phys.89,
5243
【47】Lee PF,Dai JY,Wong KH,et al.APPLIED PHYSICS LETTERS 82
(15): 2419-2421 APR 14 (2003~2001)
【48】C. Hobbs, H. Tseng, K. Reid, B. Tayhor, L. Dip, L. Hebert,
R. Garcia, R.Hedge, J. Grant, D. Gilmer, A. Frake, V.
Dhandapani, M. Azrak, L.Prabhu, R. Rai, S. Bagchi, J.
Conner, S. Backer, F. Dumbuya, B. Nguyen,and P. Tobin,
Tech.
【49】M. A. Quevedo-Lopez, M. El-Bouanani, B. E. Gnade, and R.
M. Wallacea),M. R. Visokay, M. Douglas, M. J. Bevan, and
L. Colombo, J. Appl. Phys., Vol. 92, No. 7, 1 October 2002
【50】C. Zhao et al. Journal of Non-Crystalline Solids 303 (2002)
144–149
【51】Jin H, Oh SK, Kang HJ, et al,JOURNAL OF THE KOREAN PHYSICAL
SOCIETY 46: S52-S55
【52】Suppl. S JUN 2005 Yu HY, Li MF, Kwong DL,THIN SOLID FILMS
462: 110-113 SEP 2004
【53】 Miotti L, Bastos KP, Pezzi RP, et al. PHYSICA STATUS
SOLIDI A-APPLIED RESEARCH 201 (5): 870-880 APR 2004
【54】Kim H, McIntyre PC,JOURNAL OF APPLIED PHYSICS 92 (9):
5094-5102 NOV 1 2002
【55】Fulton CC, Cook TE, Lucovsky G, et al.,JOURNAL OF APPLIED
PHYSICS 96 (5): 2665-2673 SEP 1 2004
【56】Fujitsuka R, Sakashita M, Sakai A, et al. JAPANESE JOURNAL
OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES &
REVIEW PAPERS 44 (4B): 2428-2432 APR 2005
【57】Zhu J, Liu ZG, Li YR,JOURNAL OF PHYSICS D-APPLIED PHYSICS
38 (3): 446-450 FEB 7 2005
【58】Zhu J, Liu ZG, Zhu M, et al,APPLIED PHYSICS A-MATERIALS
SCIENCE & PROCESSING 80 (2): 321-324 FEB 2005
【59】Zhu J, Liu ZG, Feng Y JOURNAL OF PHYSICS D-APPLIED PHYSICS
36 (23): 3051-3056 DEC 7 2003
【60】L. Manchanda and M. Gurvitch, IEEE Electron Device Lett.
9,180(1988)
【61】M. Gurvitch, L. Manchanda, and J. M. Gibson, Appl. Phys.
Lett. 51, 919(1987).
【62】L Yan1, L B Kong2, Q Li1 and C K Ong,Semicond. Sci. Technol.
18 (2003) L39–L41
【63】P. F. Lee, J. Y. Dai, K. H. Wong, H. L. W. Chan, and C.
L. Choy. J .Appl.Phys,93,Number6 3665 (2003)
【64】Lee PF, Dai JY, Chan HLW, Choy CL. INTEGRATED
FERROELECTRICS 57:1213-1219(2003)
【65】Masato Koyama,Yuuichi Kamimuta, Mitsuo Koike,Masamichi
Suzuki and Akira Nishiyama .Japanese Journal of Apploed
Physics Vol.43,No.4B, (2004)pp.1788-2794
【66】Mikhelashvili V, Brener R, Kreinin O, et al,APPLIED
PHYSICS LETTERS 85 (24): 5950-5952 DEC 13 2004 Cho MH,
Moon DW, Park SA, et al.
【67】Bae SH, Lee CH, Clark R, et al,IEEE ELECTRON DEVICE LETTERS
24 (9): 556-558 SEP 2003
【68】 Zhao, C.; Richard, O.; Young, E.; Bender, H.; Roebben,
G.; Haukka, S.; De Gendt, S.; Houssa, M.; et. al.
Jounral of Non-Crystalline Solids 303 (2002) 144-149
【69】Zhu J, Liu ZG .MICROELECTRONIC ENGINEERING 66 (1-4):
849-854 APR 2003
【70】Zhu, Minga, b; Chen, Penga; Fu, Ricky K.Y.a; Liu, Weilib;
Lin,Chenglub; Chu, Paul K.aThin Solid Films 476 (2005)
312–316
【71】Byung-Eun Parka) and Byung-Eun Parka) ,Appl. Phys. Lett.,
Vol. 79, 807(2001)
【72】R. A. B. Devinea),J. Appl. Phys.,Vol.93,No.12, 9938(2003)
【73】Pvitnov,A.Harazoniva,Journal of material science:
Material in electronic,14(2003)757-758
【74】J Zhu1,3, Z G Liu2 and Y R Li1,J. Phys. D: Appl. Phys.
38 (2005) 446–450
【75】R. A. B. Devine and A. G. Revesz J. Appl. Phys.,Vol. 90,
No. 1, 1 July 2001
【76】F.Chen et al.Microelectronic Engineering72(2004)263–
266
【77】CHANDRA S. DESU, POORAN C. JOSHI & SESHU B. DESU,Journal
of Electroceramics, 10, 209–214, 2003
【78】Yet-Ming.Chiang,Dunbar.Birnie.W.David Kingery,
「Physical Ceramics」
【79】J Zhu1,3, Z G Liu2 and Y R Li1,J. Phys. D: Appl. Phys.
38 (2005) 446–450
【80】H.Y. Yua,*, M.F. Li a,b, D.L. KwongThin Solid Films 462–
463 (2004) 110–113
【81】Hyoungsub Kim,a) Ann Marshall, and Paul C.
McIntyreKrishna C. oon Sig JOO, Byung Jin CHO_, Chia
Ching YEO, Nan WU, Hongyu YU, Chunxiang ZHU,Ming Fu LI,
Dim-Lee KWONG1 and Narayanan BALASUBRAMANIAN2Jpn. J.
Appl. Phys. Vol. 42 (2003) pp. L 220–L 222
【83】J Zhu, Z G Liu1 and Y FengJ. Phys. D: Appl. Phys. 36 (2003)
3051–3056
【84】Pvitnov,A.Harazoniva,Journal of material science:
Material in electronic,14(2003)757-758
【85】M.-H. Cho,a) Y. S. Rho, H.-J. Choi,b) S. W. Nam,b) D.-H.
Ko,b) J. H. Ku,c) H. C. Kang,d) D. J. Vac. Sci. Technol.
A, Vol. 20, No. 3, MayÕJun 2002
第四章
【1】Xiaomei Guo and Kenji Sakurai,Mechano-chemical synthesis
of Y-M-O (M =Al, Ga) oxides (October, 2000)
【2】Dieter K.Schroder＂Semiconductor Material and Device
Characterization、2nd edition “
【3】R. A. B. Devine,A. G. Revesz,J. Appl. Phys., Vol. 90, No.
1,1July pp. 389-393(2001)
【4】CHANDRA S. DESU, POORAN C. JOSHI & SESHU B. DESU,
Journal of Electroceramics, 10, 209 –214, 2003
【5】F. Chen, X. Bin, C. Hella, X. Shi, W.L. Gladfelter, S.A.
Campbell,Microelectronic Engineering 72 (2004)263 –266
【6】Moon Sig JOO, Byung Jin CHO _ ,Chia Ching YEO, Nan WU, Hongyu
YU, Chunxiang ZHU,Ming Fu LI, Dim-Lee KWONG1 and
NarayanaBALASUBRAMANI,Jpn.J.Appl.Phys.Vol.42(2003)pp.L2
20–L222
【7】J.Robertson*, P.W.Peacock ,Thin Solid Films 445
(2003)155 –160
【8】J Zhu, Z G Liu1 and Y FengJ. Phys. D: Appl. Phys. 36 (2003)
3051–3056
【9】Pvitnov,A.Harazoniva,Journal of material science:
Material in electronic,14(2003)757-758
【10】M.-H. Cho,a) Y. S. Rho, H.-J. Choi,b) S. W. Nam,b) D.-H.
Ko,b) J. H. Ku,c) H. C. Kang,d) D. J. Vac. Sci. Technol.
A, Vol. 20, No. 3, MayÕJun 2002
【11】H.Y. Yua,*, M.F. Li a,b, D.L. Kwong,Thin Solid Films 462–
463 (2004) 110– 113.
【12】V. Afanas＇eva! and A. Stesmans,C. Zhao and M. Caymax,Z.
M. Rittersma, J. W.Maes ,Appl.Phys.Lett.86,072108(2005)
【13】H. Y. Yu, M. F. Li,a) B. J. Cho, C. C. Yeo, and M. S.
Joo,D.-L.Kwong,J. S. Pan,C. H. Ang and J. Z. Zheng,S.
Ramanathan,Appl. Phys. Lett.,Vol.81, No. 2, 8 July (2002)
【14】Hyoungsub Kim,a) Ann Marshall, and Paul C. McIntyreKri
shna C. oon Sig JOO, Byung Jin CHO_, Chia Ching YEO, Nan
WU, Hongyu YU, Chunxiang ZHU,Ming Fu LI, Dim-Lee KWONG1
and Narayanan BALASUBRAMANIAN2Jpn. J. Appl. Phys. Vol.
42 (2003) pp. L 220–L 222