本論文是以顯微拉曼光譜儀研究單層、雙層及多層(小於10層)石墨烯的氫化反應。氫化石墨烯，亦被稱為石墨烷，是由石墨烯經由氫化反應轉變而成，為一具有能隙之新材料。我們以機械剝離法製備石墨烯，並使用射頻氫氣電漿使石墨烯進行氫化反應，再觀察氫化反應前後石墨烯拉曼光譜之變化。
經過氫氣電漿處理，石墨烯之拉曼光譜除了原有的特徵峰值(G peak及2D peak)，還會出現晶格缺陷所導致的D peak，我們認為可還原的D peak與氫化反應有關，故我們以可還原的D peak強度判斷氫化反應的程度，D peak與氫化反應的關係我們將於論文中說明。我們發現除了單層石墨烯可被氫化之外，雙層石墨烯，甚至多層石墨烯(小於10層)亦可被氫化，層數不同的石墨烯其氫化條件並不相同，層數較少的石墨烯較容易被氫化。我們以改變氫氣電漿處理時間作為氫化條件的改變，我們發現層數較多的石墨烯需要更長的處理時間才能達到氫化的目的。本實驗結果展現了氫化反應的複雜性，這些影響的因素是在對石墨烯進行化學修飾(chemical functionaliztion)時不可忽略的。

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