本文是利用互補式金屬氧化物半導體(Complementary Metal-Oxide-Semiconductor, CMOS)製程平台製作微機械雙鉗音叉式共振器(Double-ended Tuning Fork, DETF)，並搭配TSMC 2P4M CMOS 0.35 m製程的轉阻放大器電路設計出振盪器系統。為了改善振盪器之頻率穩定度，我們透過主動式的低功率消耗加熱平台進行溫度控制，其加熱效率為140 ℃/mW；並且搭配被動式溫度補償的設計(使用材料特性)有效降低振盪器系統之頻率溫度係數(Temperature Coefficient of Frequency, TCf)，其值約為2.84 ppm/℃ (未開啟加熱平台)。本論文並驗證了此振盪器系統相位雜訊無論是否啟用加熱平台皆能擁有一樣的水準，且一般的偏誤不穩定度(Bias Instability)約為32 ppb；而在啟用低功率消耗的加熱平台後之振盪器系統偏誤不穩定度僅略為提升至95 ppb。最終透過元件改善設計以及溫度控制改善整體系統性能使得元件之一階頻率溫度係數約為0.17 ppm/℃，溫度穩定度(Thermal Stability)約為4 ppm。

　　This work reports an ultra-low-power temperature-compensated CMOS-MEMS oscillator based on an uniform temperature design that ensures low temperature gradient of the proposed resonator to attain high frequency stability. The oven heating efficiency greater than 140˚C/mW has been achieved in this work by a proper thermal isolation design. In addition, the lowest temperature coefficient of frequency (TCf) of 2.84 ppm/˚C is also accomplished through a passive temperature compensation scheme. The performance of the ovenized oscillator is evaluated by Allan deviation where the frequency instability of 95 ppb / 32 ppb is characterized for the oven on/off conditions, respectively, which is on par with state-of-the-art silicon-based MEMS oscillators.
　　To further improve the performance of the oscillator, a revised CMOS-MEMS oscillator with close-to-zero TCf of 0.17 ppm/˚C is achieved by the single-anchored (SA-) design for stress releasing with passive compensation by composite materials. The overall thermal stability of 4 ppm across 140˚C temperature span has been demonstrated by the constant resistance algorithm realized by the LabVIEW system, which is equivalent to 29 ppb/˚C. In addition, the Built-in Self-Test (BIST) has been designed for the rapid thermal-cycling test, which greatly reduces the testing time from hours to minutes.

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