本研究目的為製備可應用於軟性電子之功能性奈米材料，最後整合這些奈米材料以噴墨法製作全噴印電子元件，工作內容有奈米材料微粒合成、材料分析、奈米級分散、噴墨技術、材料電性測量等，內容分為四部分。
一、奈米銀粒徑控制與特性研究
本研究首先使用還原力強之硼氫化鈉作為還原劑，以PVP作為分散劑，成功製備出平均粒徑介於9nm - 100nm間之奈米銀。藉由分析此一系列不同平均粒徑奈米銀，吾人對奈米銀的粒徑與導電特性作了完整的解釋。由TGA分析計算出PVP在奈米銀表面之飽和吸附量約5mg/m2，厚約4.2nm，事實上奈米銀的燒結與導電特性皆受到PVP包覆層的影響。平均粒徑大於60nm之奈米銀因其中PVP所佔體積分率低於粒子堆積孔隙率，在常溫乾燥後有最佳導電率約1x10-4Ω-cm，平均粒徑小於15nm之奈米銀則因PVP體積分率過高，銀微粒呈現彼此無接觸之均勻分散而無法導電。加熱有助於改善導電率，在200℃以下是為PVP中水分移除與銀微粒中晶粒燒結，當加熱到200℃時銀催化部分PVP在較低溫分解，使銀顆粒得以接觸，熱處理溫度達250℃以上時因銀催化大部分PVP分解，故即使PVP含量很高之銀膠體亦可形成導電膜。

二、奈米銀佈線之無電電鍍銅電路製作研究
研究顯示銅成膜品質受銀微粒之單位面積分佈量影響，每平方公分109個粒子以上較佳。當所使用之奈米銀粒徑為50nm時，噴墨塗佈催化層之銀墨水銀含量需高於1wt%，而當使用之奈米銀平均粒徑為20nm時銀含量僅需0.1wt%效果即十分良好。此奈米銀催化之銅鍍層可與物理方法粗糙化之PET表面形成很好的附著，而基材粗糙度Ra在0.4μm以下銅鍍層表面較平整，銅膜電阻率約為2μΩ-cm與純銅接近。使用電腦控制繪圖機在預處理之PET表面塗佈奈米銀塗佈線路，經無電電鍍銅可獲得與原圖案相同且附著良好之銅導線。

三、奈米InGaZnO製備與其溶液法薄膜電晶體特性研究
本實驗藉由控制共沈澱程序獲得勻相之In-Ga-Zn氫氧化物，再分別以鍛燒法獲得平均20nm 之非結晶及平均60nm之結晶相InGaZnO粒子 以水熱法獲得平均60nm之含結晶水之In-Ga-Zn化合物微粒。後續以CMC及PAA-NH4將奈米粒子穩定分散於水溶液中，以PVB將奈米粒子穩定分散於醇類溶液中，達到了能夠塗佈成膜的目的。而此IGZO膠體溶液所製備薄膜電晶體顯示出具有因電場大小而開關電流的特性，其載子遷移率為1.3~2.3cmV-1s-1，遠優於使用純氧化鋅製作之TFT，極具實用價值。

四、全噴墨式電子元件技術研究
最後本研究則整合了奈米銀噴墨、奈米太酸鋇噴墨、奈米IGZO噴墨，利用商用印表機製作出全噴墨之電子元件，包含導線、薄膜電容器、薄膜電晶體等，而如整合薄膜電容器與薄膜電晶體則可形成一個記憶體單元。

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