電制吸收調變雷射（EML，Electroabsorption Modulated Laser）。有高速調變、低驅動電壓、可與雷射積體化、體積小等優點，符合都會光纖網路中光源的需求。而不須外加電熱致冷器就可以達到高溫度範圍的非冷卻式EML，是目前努力的目標之ㄧ。本論文旨在設計非冷卻式電制吸收調變器的量子井結構，並且量測分析實作元件的光電特性。在材料上採用有較佳溫度特性表現的AlGaInAs/InP系統，由兩次不同的設計方式，分別和1.55μm波段的FP以及DFB雷射做一積體整合，最後量測實作元件，比較其溫度特性和吸收表現上的優劣。
由實驗結果發現，較深的量子井，較厚的位能障厚度，能得到較大的吸收效果和良好的溫度特性表現。推斷其原因，應該是這樣的結構有較強烈的QCSE效應，造成明顯的激子吸收峰值，這樣的現象可以從不同溫度下，0V的光電流吸收頻譜中觀察到。然而，較淺的量子井，可能犧牲了部分的吸收效果，但理論上應該可以降低chirp的效應，可惜我們尚未將元件封裝，實際量測比較量子井結構對chirp的影響。本論文最後提出了一個改良的量子井結構，如果能搭配元件B的積體整合方式，應該可以得到更佳的光電特性，希望未來可以驗證此結構的可行性。

The electro-absorption modulated lasers(EMLs) has the advantage of high modulation speed、low drive voltage、integrated with lasers、small size. All of these are suitable to be the light source of metropolitan fiber network. Operating at a high temperature range without thermoelectric cooler (TEC) is the goals of this thesis. The work of this thesis includes the design of the uncooled quantum well structure and measures the optical characteristic of the devices. We use the AlGaInAs/InP material system in order to get the outstanding temperature characteristic. Two different EAM quantum well designs are integrated with 1.55μm FP and DFB laser respectively, and compare which one is better for the high temperature operation.
According to the results, we find that the EAM has larger absorption and better performance of temperature when the quantum well is deeper and the thickness of the barrier is thicker. The reason is such structure has stronger QCSE so that we can observe the exciton absorption peak at different temperature with the zero bias. However, the shallower quantum well may have the smaller absorption, but it could reduce the chirp effects theoretically. We did not package the device yet,and measure the influence of the quantum well structure on chirp parameter. We expect to verify this point in the future.

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