Sn-Cu-Ni是現代微電子工業中重要之系統，本研究以實驗之方法，探討Sn/(Cu,Ni)之界面反應，以及Sn/Ni、Sn-0.7wt%Cu/Ni之界面反應與接點機械性質。前者主要是補足文獻中於此部份之不足，後者則是探討接點之界面反應與接點機械性質之間的關係。由240℃之Sn/(Cu,Ni)反應偶結果發現，當Sn與純Cu以及Cu-1wt%Ni基材反應時，界面處會生成Cu6Sn5以及Cu3Sn兩相；當Cu基材中的Ni含量介於5wt%Ni~30wt%Ni時，界面處將只生成Cu6Sn5相；當Cu基材中的Ni含量介於35wt%Ni~40wt%Ni時，界面處將會出現Cu6Sn5相及Ni3Sn4相兩相；而當Cu基材中的Ni含量超過40wt%時，界面處將只觀察到Ni3Sn4相的生成。Sn/Ni於200℃下，僅在界面生成Ni3Sn4相，且其生成相厚度與反應時間成一「拋物線」關係；而Sn-0.7wt%Cu/Ni系統則在反應72小時之後，於界面處觀察到Cu6Sn5以及Ni3Sn4兩相的生成，且其生成相總厚度與反應時間並非成「拋物線」的關係。
從Sn/Ni與Sn-0.7wt%Cu/Ni拉伸強度測試的結果可知，接點拉伸強度會因界面生成相的成長，而有明顯的下降趨勢。且破壞位置以及破壞面型態，亦會因界面生成相的成長以及種類而有所改變，且破壞位置會從原先破壞在銲料中，轉移到生成相中。

省樞, 工業材料, 第127期, pp. 90-96, 民國86年7月
2. 林光隆, 中國材料科學學會年會論文集, pp. 153-159, (1998)
3. 溫英男, 電子月刊, 第六卷, 第十一期, pp. 178-185, (2000)
4. 馮克林, 工業材料, 第158期, pp. 90-98, 民國89年2月
5. 余俊輝, 戴江漢, 陳培煌, 工業材料, 第158期, pp. 84-89,民國89年2月
6. C. H. Lin, S. W. Chen and C. H. Wang, J. Electronic Materials, Vol. 31. No. 9, pp. 907-915, (2002)
7. J. HicKl and R. W. Heckel, Metallurgical Transactions A, Vol.6A, pp.431-440, (1975)
8. J. I. Dybkov, J. Materials Science, Vol. 21, pp. 3078-3084, (1986)
9. C. L. Tsao, S. W. Chen, J. Materials Science, Vol. 30, pp.5215-5222, (1995)
10. G. V. Kidosn, J. Nuclear Materials, Vol. 3, No.1, pp.21-29, (1960)
11. F. J. J. Van Loo, Prog. Solid St. Chem., Vol. 20, pp.47-99, (1990)
12. C. Wagner, Z. Anorg. Chem., Vol. 236, pp. 320, (1938)
13. J. B. Clark, Transactions of the Metallurgical Society of AIME, Vol. 227. pp.1250-1251, (1963)
14. P. Shewmon, “Diffusion in Solids”, 2nd ed., McGraw-Hill, New York, (1963)
15. D. A. Porter, K. E. Easterling, “Phase Transformations in Metals and Alloys”, (2000)
16. R. E. Reed-Hill and R. Abbaschian, “Physical Metallurgy Principles”, 3rd edition, PES, Boston, (1994)
17. L. H. Su, Y. W. Yen, C. C. Lin, and S. W. Chen, Metallurgical and Materials Transaction B, Vol. 28B, pp. 927-934, (1997)
18. N. Saunders and A. P. Miodownik, Bulletion of the Alloy Phase Diagrams, Vol. 11, No. 3, pp. 278-287, (1990)
19. K. N. Tu and R. D. Thompson, Acta Metall., Vol. 30, pp. 947-952, (1981)
20. Z. Mei, A. J. Sunwoo and J. W. Morris, Jr., Metallurgical Transactions A, Vol. 23A, pp. 857-864, (1992)
21. S. W. Chen, C. M. Chen and W. C. Liu, J. Electronic Materials, Vol. 27, No. 11, pp. 1193-1198, (1998)
22. A. Hayashi, C.R. Kao and Y. A. Chang, Scripta Materialia, Vol. 37, No.4, pp. 393-398, (1997)
23. S. Bader, W. Gust and H. Hieber, Acta Metall. Mater., Vol. 43, No. 1, pp. 329-337, (1995)
24. F. Bartels and J. W. Morris, Jr., G. Dalke and W. Gust, J. Electronic Materals, Vol. 23, No. 8, pp. 787-790, (1994)
25. P. Nash and A. Nash, Bulletin of Alloy Phase Diagrams, Vol. 16, No. 4, pp. 350-359, (1985)
26. 陳志銘, ”電遷移對無鉛銲料與基材界面反應之影響”, 國立清華大學, 化學工程研究所博士論文, (2002)
27. W. J. Tomlinson, H. G. Rhodes, J. Materials Science, Vol. 22, No. 5, pp. 1769-1772, (1987)
28. S. K. Kang and V. Ramachandran, Scripta Metallurgica, Vol. 14, pp. 421-424, (1980)
29. D. Gur and M. Bamberger, Acta Mater, Vol. 46, No. 14, p. 4917-4923, (1998)
30. J. A. Van Beek, S. A. Stolk and F. J. J. Van Loo, Bd., Vol. 73, pp. 439-444, (1982)
31. D. J. Chakrabarti, D. E. Laughlin, S. W. Chen and Y. A. Chang, “Phase Diagrams of Binary Nickel Alloys”, edited by P. Nash, ASM, Materials Park, pp. 85-95, (1991)
32. 王朝弘, “Al-Cu-Ni三元系統和Sn-Cu-Ni三元系統在800℃下之相平衡及其相關界面反應”, 國立清華大學, 化學工程研究所碩士論文, (2002)
33. W. T. Chen, C. E. Ho and C. R. Kao, J. Materials Research, Vol. 17, No. 2, pp. 263-266, (2002)
34. J. S. Ha, C. S. Kang, J. Y. Park and J. P. Jung, Materials Transactions, Vol. 42, No. 5, 00. 814-819, (2001)
35. N. E. Dowling, “Mechanical Behavior of Materials”, 2nd , Prentice Hall, (1999)
36. G. P. Anderson, S. J. Bennett and K. L. Devries, “Analysis and Testing of Adhesive Bonds”, Academic Press, (1977)
37. R. D. Adams and W. C. Wake, “Structural Adhevsive Joints in Engineering”, Elsevier Applied Science Publishers, (1984)
38. R. Howink and G. Salomon, “Adhesion and Adhesives”, Elsevier Pubishing Company, (1967)
39. “1983 Annual Book of ASTM Standards”, Vol. 15.06, pp. 184-187, (1983)
40. J. London and D. W. Ashall, Brazing and Soldering, No. 10, pp. 17-20, (1986)
41. L. Qua, D. Frear, D. Grivas and J. W. Morris, Jr., J. Electronic Materials, Vol. 16, No. 3, pp. 203-208, (1987)
42. H. T. Lee and M. H. Chen, Materials Science and Engineering, Vol. 333, pp. 24-33, (2002)
43. 陳明宏, 李驊登, 饒慧美, 廖天龍, “界面金屬間化合物對錫銲接點破壞行為之行為”, 中華民國第七屆破壞科學研討會論文集(民國九十一年), B4-05-1, (2000)
44. S. H. Huh, K. S. Kim and K. Suganuma, Materials Transactions, Vol. 43, No. 2, pp. 239-245, (2002)
45. S. H. Huh, K. S. Kim and K. Suganuma, Materials Transactions, Vol. 42, No. 5, pp. 739-744, (2001)
46. J. K. Lin, A. D. Silva, D. Frear, Y. Guo, J. W. Jang, L. Li, D. Mitchell, B. Yeung, and C. Zhang, 2001 Electronic Components and Technology Conference, pp. 455-462, (2001)
47. C. M. L. Wu, and M. L. Huang, Journal of Electronic Materials, Vol. 31, No. 5, pp. 442-448, (2002)
48. J. S. Hwang, Z. Guo, and H. Koenigsmann, Soldering and Surface Mount Technology, Vol. 13, No. 2, pp. 7-13, (2001)
49. L. Xiao, J. Liu, Z. Lai, L. Ye, and A. Th ölén, 2000 International Symposium on Advanced Packaging Materials, pp. 145-151, (2000)
50. W. J. Plumbridge, and C. R. Gagg, Journal of Material Science: Materials in electronics, Vol. 10, pp. 461-468, (1999)
51. D. E. Gray, American Institute of Physics Handbook, McGraw-Hill, New York, (1957)