中 文 摘 要

我們已經研究金屬-氧化物-高介電係數介電層-氧化物-矽結構(SONOS-Type Flash Memory) 並使用HfO2 and ZrO2 作為高介電係數介電層結構的電容器和電晶體，分別稱作MOHOS與MOZOS。並對元件作基本的電性量測與可靠度分析；首先藉由不同的儲存層材料的差異，探討其對SONOS元件電特性的影響；再來探討不同RTA溫度對儲存層特性的影響。
Memory window方面，電容器結構在用as-deposited 的ZrO2所得到的Memory Window為7V是最大的情況，並計算出電荷密度為5.3×1013cm-2，且電荷保持力(retention time) 在十年後仍有0.5V的門檻電壓差。N-channel MOHOS電晶體，我們使用射頻磁控濺鍍法沈積HfO2或ZrO2薄膜，結果得到用as-deposited的high-k薄膜作儲存層時，memory window、寫入抹除速度和電荷保持力皆比其它情況好。
在基本電性上的表現，如：ID-VD，ID-VG及C-V等，皆證明電晶體能夠正常的操作，且發現臨界電壓約在1.9V，最小的次臨界斜率是85.5 mV/dec.，在VD=0.05V下，ION/IOFF的比例有5個數量級之多。經由次臨界斜率St=2.3(kT/q)[1+(CD+Cit)/Cox]的計算，可以得到界面缺陷電荷密度（Dit）為5.73x1011 cm-2-eV-1。

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