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研究生: 林伯翰
Lin, Po Han
論文名稱: N-type Bi-SeTe合金摻雜第四元元素Ga的相圖建構
Phase diagram determinations of the N-type Bi-Se-Te-Ga alloys
指導教授: 陳信文
Chen, Sinn Wen
口試委員: 陳洋元
黃菁儀
朱旭山
陳信文
學位類別: 碩士
Master
系所名稱: 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年: 2015
畢業學年度: 103
語文別: 中文
論文頁數: 135
中文關鍵詞: N型-(Bi2Se3)x(Bi2Te3)1-x熱電材料相圖等值剖面相圖
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  • 能源是目前全球共同關注之焦點。開發各種替代能源、提高能源使用效率,都是非常重要之能源發展方向。熱電材料可以回收廢熱轉換成電能,提昇能源之使用效率,因此受到很大之重視。N型-(Bi2Se3)x(Bi2Te3)1-x為具有良好熱電性質之材料。先前研究結果更顯示,於N型-(Bi2Se3)x(Bi2Te3)1-x合金中摻雜第四元的Ga元素,能使熱電性質得到更進一步的提升。相圖是基本之材料資訊,對於材料製程的選擇、以及材料現象之瞭解,皆十分重要。然而目前文獻中並無Bi-Se-Te-Ga四元材料系統之相圖,本研究目的在於建構Bi-Se-Te-Ga四元系統相圖,以做為此熱電材料之開發與探討之基礎。本研究的工作包括:(1) 依據目前的文獻,建構Bi-Se-Te-Ga的三元子系統Bi-Se-Ga、Bi-Te-Ga、Ga-Se-Te及Bi-Se-Te於200oC之三元等溫橫截面圖;(2)以實驗的方法探討Bi含量40at.%之Bi-Se-Te-Ga在200oC及250oC下的等溫橫截面圖;(3)利用實驗的方法,探討與建構Bi-Se-Te及Bi-Se-Ga三元熱電系統之液相線投影圖。本研究已利用相關文獻建構出Bi-Se-Ga、Bi-Te-Ga、Ga-Se-Te及Bi-Se-Te於200oC下可能之等溫橫截面圖。在四元系統相圖的部分,建構出 Bi含量40at.%-Se-Te-Ga於200oC相圖兩個四相區的部分,屬於Ga含量較高的部分,包含Bi+Liquid+GaSe+GaTe以及Bi+Bi2Te+GaSe+GaTe兩個四相區。在Bi-Se-Te液相線投影圖的部分,建構出兩個首要析出相區包含Bi2(Se,Te)3及(Se,Te),而在上半部則由於Bi-Te及Bi-Se相關二元相太過複雜而無法確認,其中沒有三元相的存在;在Bi2(Se,Te)3及(Se,Te)兩個相區的邊界上存在一個鞍點。在Bi-Se-Ga液相線投影圖的部分,包含Bi、Ga、GaSe、α- Ga2Se3、β-Ga2Se3、Se、Bi2Se3及未知的Bi-Se二元相等首要析出相區。於此三元系統中包含一Class III反應Liquid+Bi+GaSe=Ga,反應溫度為222oC;及一個Class II反應,Liquid+β-Ga2Se3=Bi+GaSe,反應溫度為260oC。


    Energy-related issues are the world-wide focus nowadays. Thermoelectric
    materials have attracted tremendous research interests because of their abilities
    to convert waste heat directly into electricity and thus increase the energy usage
    efficiencies. N-type-(Bi2Se3)x(Bi2Te3)1-x alloys have good thermoelectric
    properties, and recent studies indicate their properties can be further enhanced
    with Ga doping. Phase diagrams are basic materials information, and are
    fundamentally important for the processing routes selection and understanding
    of related phenomena. This study determines the phase diagrams of the Bi-Se-
    Te-Ga system since there are only limited information available. The research
    efforts of this study include: (1) determination the isothermal sections at 200oC,
    based on the available related literatures, of the four constituent ternary systems
    of the Bi-Se-Te-Ga system, Bi-Se-Ga、Bi-Te-Ga、Ga-Se-Te and Bi-Se-Te, (2)
    experimental determination the 200oC isothermal sections of Bi-Se-Te-Ga at
    composition at 40 at.% Bi, (3) experimental determination the liquidus
    projections of Bi-Se-Te and Bi-Se-Ga systems. The item (1) has been completed,
    and the Bi-Se-Ga、Bi-Te-Ga、Ga-Se-Te and Bi-Se-Te at 200oC isothermal
    sections have been determined. Two four-phase regions, Bi+Liquid+GaSe+GaTe
    and Bi+Bi2Te+GaSe+GaTe, are determined in the 200oC isothermal section of
    Bi-Se-Te-Ga quaternary system at the Ga-rich corner. Since most of the binary
    compounds at the Bi-rich side are not clearly determined, only the phase
    relationships at the Se-Te side are determined. Two primary solidification phase
    regions, Bi2(Se,Te)3 and (Se,Te), were confirmed. No ternary compound has been
    found. There is a saddle point at the boundary of Bi2(Se,Te)3/(Se,Te). In the part
    of Bi-Se-Ga liquidus projection, there are eight primary solidification phase
    regions: Bi, Ga, GaSe, α-Ga2Se3, β-Ga2Se3, Se, Bi2Se3 and unknown Bi-Se
    binary compounds. There are one class III reaction: Liquid+Bi+GaSe=Ga at
    222oC and one class II reaction: Liquid+β-Ga2Se3=Bi+GaSe at 260oC.

    摘要 I Abstract II 一、前言 1 二、文獻回顧 4 2-1 Bi-Se二元系統相平衡 4 2-2 Bi-Te二元系統相平衡 4 2-3 Bi-Ga二元系統相平衡 5 2-4 Se-Te二元系統相平衡 5 2-5 Ga-Se二元系統相平衡 5 2-6 Ga-Te二元系統相平衡 6 2-7 Bi2Se3-Ga2Se3三元系統等值剖面圖 6 2-8 BiSe-Ga2Se3三元系統等值剖面圖 6 2-9 BiGa2Se4-Bi2Se3三元系統等值剖面圖 7 2-10 Bi-GaSe三元系統等值剖面相圖 7 2-11 Bi-Ga2Se3三元系統等值剖面相圖 7 2-12 Bi-Te-Ga三元系統等溫橫截面圖 7 2-13 Bi2Te3-Ga2Te3三元系統等值剖面圖 8 2-14 Bi2Te3-GaTe三元系統等值剖面圖 8 2-15 Bi-GaTe三元系統等值剖面圖 8 2-16 BiTe-GaTe三元系統等值剖面圖 8 2-17 Ga2Se3-Ga2Te3三元系統等值剖面圖 9 2-18 GaSe-GaTe三元系統等值剖面圖 9 2-19 GaSe-Ga2Te3三元系統等值剖面圖 9 2-20 Bi2Se3-Bi2Te3三元系統等值剖面圖 9 2-21 Bi40Se3Te57-Se50Te50三元系統等值剖面圖 10 2-22 Bi40Se3Te57-Se三元系統等值剖面圖 10 2-23 Bi40Se3Te57-Te三元系統等值剖面圖 10 三、研究方法 26 3.1 Bi-Se-Te-Ga 四元系統相平衡 26 3.1-1 相平衡合金製備 26 3.1-2相平衡實驗及分析 26 3.2 Bi-Se-Te及Bi-Se-Ga三元熱電系統液相線投影圖 27 3.2-1液相線投影圖合金製備 27 3.2-2液相線投影圖合金分析 27 3.2-3 微熱差分析 28 四、結果與討論 29 4.1 Bi-Se-Ga於200oC下的等溫橫截面圖 29 4.2 Bi-Te-Ga於200oC下的等溫橫截面圖 31 4.3 Ga-Se-Te於200oC下的等溫橫截面圖 33 4.4 Bi-Se-Te於200oC下的等溫橫截面圖 35 4.5 Bi-Se-Te-Ga四元系統200oC相平衡 37 4.5-1 Liquid+GaSe+GaTe+Bi四相區 39 4.5-2 Bi+GaSe+GaTe三相區 42 4.5-3 Bi+Bi2Te+GaSe+GaTe四相區 45 4.5-4 未達相平衡之合金 48 4.6 Bi-Se-Te三元系統液相線投影圖 56 4.6-1 首要析出相:Bi2(Se,Te)3相區 59 4.6-2 首要析出相:(Se,Te)相區 65 4.6-3首要析出相:未知相區 68 4.6-4 Bi-Se-Te熱分析 82 4.7 Bi-Se-Ga液相線投影圖 86 4.7-1首要析出相:Bi相區 90 4.7-2首要析出相:GaSe相區 96 4.7-3首要析出相:β-Ga2Se3相區 101 4.7-4首要析出相:Bi2Se3相區 115 4.7-4未知首要析出相區:Bi-Se二元相 118 4.7-5 Bi-Se-Ga熱分析 124 五、結論 129 六、參考文獻 131

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