Interfacial Electrical Properties of In-situ ALD-HfAlO/GaAs MOS Capacitor

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研究生：	許嘉倫 Hsu, Chia-Lun
論文名稱：	Interfacial Electrical Properties of In-situ ALD-HfAlO/GaAs MOS Capacitor 原位原子層沉積成長氧化鉿鋁/砷化鎵之介面及其電性研究
指導教授：	洪銘輝 Hong, Minghwei 郭瑞年 Kwo, Ray Nien
口試委員:	□振瀛
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2011
畢業學年度：	99
語文別：	英文
論文頁數：	70
中文關鍵詞：	原位原子層沉積、氧化鉿鋁、砷化鎵、電晶體
外文關鍵詞：	ALD, HfAlO, GaAs, MOS
相關次數：	點閱：2 下載：0
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The scaling of Si-based metal-oxide-semiconductor ﬁeld-effect transistors (MOSFETs) is approaching to the physical limitations when scaling down. One potential solution is to replace to the traditional SiO2/Si MOS structure with high k oxide/GaAs.
In this work, in-situ ALD-HfAlO on n-GaAs and p-GaAs without using interfacial passivation layers and chemical treatments between oxide/III-V interfaces were performed in a multi-chamber UHV MBE/ALD system.
The C-V frequency dispersions were 59% and 23% on n- and p- GaAs, respectively. After RTA at 850oC in He for 10 sec, the frequency dispersion were decreased to 30% for n-type and 13% for p-type. The electrical property shows the structure has high thermal stability. The ALD-HfAlO/GaAs stack has a high dielectric constant ranged from 13.8 to 15, and the CET was decreased to 1.18nm.
The study shows that in-situ ALD-HfAlO is a suitable dielectric oxide for MOSFETs design due to its effective passivation of GaAs surface and excellent thermodynamic stability after RTA to 850oC for S/D activation.

　　隨著互補式金氧半場效電晶體(MOSFETs)電子元件尺寸的縮小，現有的矽半導體相關的電子元件已面臨本質材料特性與技術上前所未有的挑戰，如此一來，我們必須要具備有高載子遷移率之半導體材料，像是三五族半導體砷化鎵，再搭配高介電常數氧化物成為未來發展的趨勢。
　　本實驗藉著原子層沉積法成長高介電常數氧化鉿鋁於乾淨的砷化鎵半導體通道上，過程中全部都在超高真空系統中進行。
　　在經過850oC快速高溫氦氣退火10秒後，由MOSCAP的電容電壓曲線量測結果顯示在聚積層和空乏層中電容的分散趨勢有明顯的縮小，n型半導體砷化鎵由59%降低到30%，p型半導體砷化鎵由23%降低到13%，這說明了我們實驗室利用超高真空系統原子層沉積方式成長氧化鉿鋁在砷化鎵半導體上有良好的熱定性，並且有相當高的介電常數接近13.8到15，同時可降低電容等效氧化厚度(CET)到達1.18奈米左右。
　　為了要活化場效電晶體的源極與汲極區，電晶體必須要能夠耐熱到850oC以上快速高溫退火，因此，原子層沉積氧化鉿鋁在砷化鎵半導體上，具有高發展潛力做為未來場效電晶體的設計。

中文摘要  IIV
Abstract  III
致謝  IV
Table of Content  VII
Figure Captions  IX
Table Captions  XIII
Chapter 1 Introduction  1
1 Background  1
2 Alternative High-k dielectrics  3
3 Motivation and Challenges of III-V Channel Materials Beyond Si CMOS  5
4 High-k Dielectrics on III-V InGaAs  7
Chapter 2 Theory and Instrumentations  10
1 Principles of Atomic Layer Deposition  10
1.1 Basic characteristic of ALD  10
1.2 General characteristics of the surface chemistry of ALD  11
1.3 Other ALD high-k materials  11
2 Ultra-High Vacuum Multi-Chamber MBE System  17
2.1 Molecular beam epitaxy  17
2.2 Reflection high energy electron diffraction (RHEED)  19
3 X-ray Photoelectron Spectroscopy  22
3.1 Instrumentation  22
3.2 Primary structure  23
3.3 Angular effect  24
4 X-ray Reflectivity  26
5 High-Resolution Transmission Electron Microscope  27
6 Fundamental of The Metal-Oxide-Semiconductor  28
6.1 The ideal MOS capacitor  28
6.2 Non-ideal effects in MOS capacitors  32
6.3 Interfacial trapped charge Analysis  33
6.4 Charges in Oxide  35
Chapter 3 Experimental Procedures  36
1 Experimental requirement  36
2 Film Deposition in Ultra-high Vacuum Multi-chamber system  36
2.1 Substrate Preparation  37
2.2 GaAs (001) buffer layer deposition  37
3 In-situ Angle-resolved X-ray Photoelectron Spectroscopy  42
4 High resolution transmission electron microscopy  42
5 Metal electrode deposition  43
6 Electrical Properties Measurement  43
Chapter 4 Results and Discussions  44
1 HR-TEM Image of Interface  44
2 In-situ ALD-HfAlO/HfO2 (~9.2nm) on GaAs(001)  45
2.1 ALD-HfAlO/HfO2 (~9.2nm) on (4x6) surface reconstruction GaAs (001)  45
2.2 Thermodynamic stability of ALD-HfAlO/HfO2 on n-GaAs  47
2.3 Leakage current and breakdown electric-field study of ALD-HfAlO/HfO2 on GaAs  50
2.4 High frequency C-V loops for a MOS capacitor  52
2.5 C-V characteristics with diﬀerent annealing temperature  53
3 In-situ ALD-HfAlO/HfO2 (~4.5nm) on p-GaAs(001)  54
3.1 ALD-HfAlO/HfO2 (~4.5nm) on (4x6) surface reconstruction p-GaAs(001)  54
3.2 Thermodynamic stability of ALD-HfAlO/HfO2 on p-GaAs  55
3.3 Leakage current and breakdown electric-field study of ALD-HfAlO/HfO2 (4.5nm) on p-GaAs  58
3.4 High frequency C-V loops for a MOS capacitor  59
4 XPS analysis of ALD-HfAlO/p-GaAs (001) interface  60
4.1 XPS analysis of ALD-HfAlO on GaAs (001) interface  60
4.2 ALD-HfAlO on p-GaAs (001) Band offsets  65
Chapter 5 Conclusion  67
References 68

                                

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