摘要
為了更了解中樞神經系統，研究人員必須透過特殊之感測儀器來得到關鍵的神經訊號。近幾年來，這類神經感測探針的研發大多利用薄膜沉積與IC產業技術，藉由成熟的IC產業技術，神經感測探針的效能與可靠度可以大大的提升。但以往的設計大多需要特殊的製程配合，這意味著較高的製作成本。因此我們將設計與製成一新穎的神經感測探針以改進所述之缺點。
在此計畫中，我們將介紹一以CMOS微加工技術所製成之神經感測探針的設計與特色。此探針晶片的製作將利用標準的台積電0.35□m 2P4M CMOS製程，並配合適當的die level後製程技術。透過此CMOS-MEMS神經感測探針，我們可以進行細胞外神經感測，並可量測到神經訊號之action potential。因此，利用標準製程加上適當的die-level後製作，並且整合感測電路與探針結構將是此CMOS-MEMS神經感測探針之特色。

Abstract
In order to understand the central nervous system more, researchers must rely on some kinds of special recording instrument to record the neural signal we want. Recently, most of neural recording probes are fabricated by using thin-film and integrated circuit(IC) technology. Because of the maturity of IC technology, the performance of neural recording probe is more reliable and accurate. But they almost must use the special process to support and that means the higher production cost. In this article, we design a novel die-level fabrication of neural recording probes to improve drawbacks of the past probes.
In this project, we present the design and characterization of a CMOS micromachined neural recording probe. The fabrication uses a standard TSMC 0.35-□m 2P4M CMOS process followed by post-CMOS micromachined steps performed at the die level. We can do the extracellular recording through our CMOS-MEMS neural recording probe and measure the electrical signal like the action potential. Therefore, the key feature of our approach is the post-CMOS process of the die level to fabricate the microstructure of neural probe and integrate the sensing circuit with microprobes.

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