本論文中第一部份主要著重在矽晶圓上形成高濃度鍺 (Ge) 薄膜以及高品質的二氧化矽 (SiO2) 熱氧化層，實驗方法首先是在矽晶圓上蒸鍍鍺薄膜，並經由退火形成單晶矽鍺 (SiGe)，後續使用濕式氧化爐管形成矽鍺氧化物 (SiGeOx)，利用矽鍺氧化物在混合氣體 (forming gas) 中會還原成鍺的特性，實驗成功的形成了高濃度鍺薄膜，而因為鍺氧化物相當不穩定，所以矽鍺氧化物會不斷經由反應式GeO2 (in solution SiO2) + H2 --> Ge + H2O 將鍺析出，最終形成二氧化矽層。當結構完成之後，輔以材料分析如X射線繞射儀、二次離子質譜儀、穿透式電子顯微鏡、電子繞射圖等儀器針對磊晶鍺薄膜作定性分析，並發現到實驗中形成的鍺薄膜是單晶結構、高濃度且二氧化矽和鍺的介面是相當平坦的。
論文第二部分主要探討使用NH3、N2O、O2不同氣體處理對氧化層電性的影響，利用在第一部份形成的結構製作成NMOS以及PMOS之鍺電容器，並量測其閘極漏電流、電容電壓特性及磁滯特性曲線。我們發現經過NH3氮化後，雖然能夠有效的提高電容值，但是卻會惡化漏電流、增加電子陷阱 (electron trap) 等效應，然而NH3氮化之後如果再以N2O或O2來修補鍵結，就能夠擁有有效提高電容值、較低漏電流的好處。

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