本文以溶凝膠法製作鋯鈦酸鉛(PZT)鐵電薄膜，使用以射頻磁控濺鍍法製作的鉛酸鋇(BaPbO3)、鎳酸鑭(LaNiO3)及以溶凝膠法製備的鉛酸鋇(BaPbO3)三種氧化物導電薄膜作為底電極。研究不同底電極對不同成份的PZT鐵電薄膜性質的影響。
在三種氧化物基板上皆可降低結晶溫度。濺鍍製備的BPO及LNO大約可降低結晶溫度50℃，在以溶凝膠法製備的BPO上可降低結晶溫度100℃左右，在550℃便可完全轉變為perovskite的相。顯示與PZT同為鈣鈦礦結構的BPO、LNO皆可幫助其結晶。在三個氧化物電極上皆無rosette結構的產生有平整的表面。

在介電方面，PZT鍍在以濺鍍方式製備的BPO及LNO上，介電常數值在Zr/Ti分別為60/40、53/47有較大的介電常數值，各為693、1092。而鍍在以溶凝膠法製備的BPO上，介電常數只有212。

在鐵電性方面，在三個氧化物電極上皆可得到較小的矯頑電場，尤其是在LNO上，因為La的擴散使矯頑電場大幅降低，殘留極化量也減少，而在兩個不同製備方式的BPO上接有較高的殘留極化量。在以溶凝膠法製備的BPO上，PZT薄膜鐵電行為較差、電滯曲線偏移的情況可經由使用較高溫熱處理過的BPO而獲得改善。

在漏電流的表現三者皆優於在Pt上的表現。施加電場小於100kV/cm，其漏電流都在1E-7 A/cm2以下。在疲勞性質有最明顯的改善，若上下電極皆使用BPO或LNO則幾乎沒有疲勞的現象。

實驗結果顯示，PZT在氧化物電極BPO、LNO上有更佳的性質，而未曾

當作PZT底電極的BPO將是個不錯的下電極選擇。

1.J.F.Scott,C.A.P.de Araujo, L.D.McMillan,H.Yoshimori, H.Watanabe, T.Mihara, M.Azuma, T.Ueda, Tetsuk Ueda, D.Ueda, and G.Kano, “Ferroelectric Thin Films in Integrated Microelectronic Devices”, Ferroelectrics , 133,(1992)47.
2.G.H.Haerting,“Ferroelectric Thin Film for Electronic Applica-
tions” , J.Vac. Sci. Technol., A9(3),(1991)414.
3.L.M.Sheppard, “Advances in Processing of Ferroelectric Thin Film”, Ceramic Bulletin,71(1), (1992) 85.
4.M.Sayer and K.Sreenivas, “Ceramic Thin Film:Fabrication and Applications”, Science 247, (1990) 1056.
5.G.Yi and M.Sayer, “Sol-Gel Processing of Complex Oxide Films”, Ceramic Bulletin, 70(7), (1991) 1173.
6.林諭男, “強介電陶磁薄膜的應用”,工業材料,107,(1995)49.
7.T. Mihara, H Watanabe, and C. A. P. de Araujo, “Evaluation of Imprint Properties in Sol-Gel Ferroelectric Pb(ZrTi)O3 Thin-Film Capacitors”, Jpn. J. Appl. Phys.,32(9B),(1993) 4168.
8. R. Ramesh, W. K. Chan, B. Wilken, H. Gilchrist, T. Sands, J. M. Tarascon, V. G. Keramidas, D. K. Fork, J. Lee, and A. Safari, “Fatigue and Retention in Ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/
Y-Ba-Cu-O Heterostructures”, Appl. Phys. Lett., 61(13),(1992) 1537.
9.P. C. Joshi and S. B. Krupanidhi, “Switching, Fatigue, and Retention in Ferroelectric Bi4Ti3O12 Thin Films”, Appl. Phys. Lett., 62(16),(1993) 1928.
10.I. K. Yoo, S. B. Desu, and J. Xing, ”Correlations among Degradations Lead Zirconate Titanate Thin Film Capacitors “, Mat. Res. Soc. Symp. Proc. Vol. 310, (1993) 165.
11.A.J.Moulson and J.M.Herbert, ”Electroceramics” Materials, Properties, Applications (1990) 52.
12.Yuhuan Xu, “Ferroelectric Materials And Their Application”,
Published by NorthHolland, Netherlands,(1991) 1-36.
13.葉明華, “脈衝雷射鍍膜法製備鈣鈦礦型鐵電薄膜之研究”,清華大學,博士論文,(1994).
14.陳銘森 , “鎳酸鑭電極對鋯鈦酸鉛溶凝膠製作與特性影響之研究”,清華大學,博士論文,(1996).
15.林家政, “添加劑(La,Mn,Nb)對溶凝膠PZT鐵電薄膜性質之影響”, 清華大學, 碩士論文, (1996)
16.I. K. Yoo and S. B. Desu, “Fatigue Modeling of Lead zirconate Titanate Thin Films”, Mater. Sci. Eng. B13 (1992) 319.
17.W. H. Shepherd, “Fatigue and Aging in Sol-Gel Derived PZT Thin Films” , Mat. Res. Soc. Symp. Proc. Vol. 200,(1990) 277.
18.H. N. Al-shareef, B. A. Tuttle, W. L. Warren, D. Dimos, M. V. Raymond, and M. A. Rodriguez, “Low Temperature Processing of Nb-doped Pb(Zr，Ti)O3 Capacitors with La0.5Sr0.5CoO3 Electrodes”, Appl. Phys. Lett.68 (2),(1996) 272
19.J. F. Scott and B. Pouligny, “Raman spectroscopy of Submicron KNO3 Films. Π. Fatigue and Space-Charge Effect”, J. Appl. Phys., 64(3), (1988) 1547.
20.D. M. Smyth, “Charge Motion in Ferroelectric Thin Films”, Ferroelectrics, (1991) 117.
21.H. M. Duiker, P. D. Beale, and J. F. Scott, “Fatigue and Switching in Ferroelectric Memories : Theory and Experiment”,J. Appl. Phys., 68 (11) ,(1990) 5783.
22.J. J. Lee C. L. Thio, M. Bhattacharya, and S. B. Desu, “Electrode Contact on PZT Thin Films and their Influence on Fatigue Properties”, Mat. Res. Soc. Symp. Proc. Vol. 361, (1995) 241.
23.D. J. Johnson, D. T. Amw, E. Griswold, K. Sreenivas, G. Yi. and M. Sayer, “Measuring Fatigue in PZT Thin Films”, Mat. Res. Soc. Symp. Proc. Vol. 200, (1990) 289.
24.C. K. Kwok and S. B. Desu, “Role of Oxygen Vancancies on the ferroelectric Properties of PZT Thin Films”, Mat. Res. Soc.Symp. Proc. Vol. 243, (1992) 393.
25.P. K. Larsen, G. J. M. dormans, D. J. Taylor, and P. J. van Veldhoven, “Ferroelectric Properties and Fatigue of PbZr0.51Ti0.49O3 Thin Film of Varying Thickness: Blocking Layer Model”, J. Appl. Phys., 76(4), (1994) 2405.
26.Carlos Paz De Araujo, James F. Scott and George W. Taylor, “Ferroelectric Thin Films: Synthesis and Basic Properties ”,
(Gordon and Breach Publishers,1996) 193-194
27.S.Wolf and R. N. Tauber, ”Silicon Processing for the VLSI Era”, published by Lattice Press , CA Sunset Beach , (1986) 384
28.E. A. Kneer , D. P. Birnie , R. D. Schrimpf , J. C. Podlesny , and G. Teowee , ”Investigation of Surface Roughness and Hillock Formation on Platinized Substrates Used for Pt/PZT/Pt Capacitor Fabrication” , Integrated Ferroelectrics ,7,(1995) 61
29.K. Sreenivas , I. Reaney , T. Maeder , and N. Setter ,”Investi-
gation of Pt/Ti Bilayer Metallization on Silicon for Ferro- electric Thin Film Integration ” , J.Appl.Phys.,75(1),(1994) 232
30.R. Bruchhaus , D. Pitzer, O. Eibl,U. Scheithauer, and W. Hoesler, “Investigation of Pt Bottom Electrodes for in-situ Deposited Pb(Zr，Ti)O3(PZT) Thin Film”,Mater. Res. Soc.Symp.Proc.,243,(1992) 123
31.Fan Wang,Antti Uusimaki,Seppo Leppavuori and Hongxue Zhang,
”Preparation of Conductive Barium Metaplumbate Thin Film Using Solution Method ”,Materials Research Bulletin,31,1,(1996)37
32.M. Kuwabara, T. Kuroda, S. Takahashi and T. Azuma, ”Preparation of BaTiO3 and PbTiO3 Thin Film on BaPbO3 Substrate by the Sol-Gel Method and Their Properties”, Mat. Res. Soc. Symp. Proc. Vol. 271, (1992) 365.
33.Takahiro Azuma, Sheiji Takahashi and Makoto Kuwabara,”Prepa-
ration and Basic Properties of BaTiO3-BaPbO3 Mutilayer Thin Film by Metal-Alkoxides Method ”,Jpn.J.Appl.Phys.Vol32,(1993) 4089
34.M.Kuwabara,S.Takahashi and T.Kuroda,”Preparation of ferro-
electric BaTiO3 Thin Film on Polycrystalline BaPbO3 Substrate by Sol-Gel Processing and Their Electric Properties”, Appl. Phys. Lett.62(25),21,(1993) 3372
35. Takahiro Azuma, Yuuji Sakamoto, Kayo Mitani, Sheiji Takahashi and Makoto Kuwabara,” Preparation and Electrical Conductivity of Metallic Conductive BaPbO3 Thin Film by Metal-Alkoxide Method”,Journal of the Ceramic Society of Japan,Vol.103,No8, (1995) 822
36.Sheiji Takahashi, Satoshi Yoneda , Hirokazu Shimooka and Makoto Kuwabara,“ Preparation of Pb(Ni1/3Nb2/3)O3 Thin Film by Sol-Gel Method”, Journal of the Ceramic Society of Japan,Vol.103,No7,
(1995) 660
37.K. Sreenivas, M.Sayer,T.Laursen,J.L. Whitton,R.Pascual,D.J.Johnson, D.T.Amm,G.I.Sproule,D.F.Mitchell,M.J.Graham,S.C.Gujrathi and K. Oxorn, ”Character of Lead Zirconate Titanate (PZT)-Indium Tin Oxide(ITO) Thin Film Interface ” ,Mater.Res.Soc.Symp.Proc. 200, (1990) 255
38.Ashok V. Rao, Said A. Mansour*, Arden L.Bement, Jr.,” Fabrication of Ferro- electric PZT Thin Film Capacitors with Indium Tin Oxide (ITO) Electrodes”, Materials Letters ,29 ,(1996) 255
39.C. W. Law, K. Y. Tong, J. H. Li, K. Li, M. C. Poon, “Effect of Oxygen Content and Thickness of Sputtered RuOx Electrodes on the Ferroelectric and Fatigue Properties of Sol-Gel PZT Thin Film ”, Thin Solid Film,
354,(1999) 162
40.H. N. Al-Shareef, B. A. Tuttle, W. L. Warren, T. J .Headly, D. Dimos, J. A. Voigt and R. D. Nasby, ”Effect of B-Site Cation Stoichiometry on Electrical Fatigue of RuO2//Pb(ZrxTi1-x)O3//RuO2 Capacitors ”, J. Appl. Phys. ,79(2),(1996) 1013
41.H. N. Al-Shareef, K.R. Bellur, O. Auciello, A.I. Kingon, “Phase Evolution and Annealing Effects on the Electrical Properties of Pb(Zr0.53Ti0.47)O3 Thin Films with RuO2 Electrodes”, Thin Solid Film,
256,(1995) 73
42.H. Kurogi, Y. Yamagata, K. Ebihara, N. Inoue, “Preparation of PZT Thin Films on YBCO Electrodes by KrF Excimer Laser Ablation Technique”, Surface and Coat- -ing Technology ,100-101,(1998) 424
43. Sung-Min Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara,” Preparation of PbZrxTi1-x O3 / La1-xSrxCoO3 Heterostructures Using the Sol-Gel Method and their Electrical Properties ”, Applied Surface Science ,117/118,(1997) 447
44..R. Dat, D. J. Lichtenwalner, O. Auciello, and A. I. Kingon,”Poly-
crystalline La0.5 Sr0.5CoO3/PbZr0.53Ti0.47/ La0.5 Sr0.5CoO3 Ferroelectric Capacitors on Platinized Silicon with No Polarization Fatigue ”, Appl.Phys.Lett.,64(20),(1994) 2673
45.R. Ramesh, H. Gilchrist, T. Sands, and V. G. Keramidas,” Ferroelectric La-Sr- Co-O/Pb-Zr-Ti-O/ La-Sr-Co-O Heterostructures on Silicon via Template Growth”,Appl.Phys.Lett.,63(26),(1993) 3592
46.Sang-Mo Koo, Li-Rong Zheng, and K.V. Rao,” BaRuO3 Thin Film Electrode for Ferroelectric Lead Zirconate Titanate Capacitors”, J.Mater.Res,vol.14,No10,(1999) 3833
47.C. B. Eom, R. B. Van Dover, Julia M. Phillips, D. J. Werder, J. H. Marshall, C. H. Chen, R. J. Cava, and R. M. Fleming,” Fabrication and Properties of Epitaxial Ferroelectric Heterostructures with (SrRuO3) Isotropic Metallic Oxide Electrodes” , Appl.Phys.Lett.63(18),(1993) 2570
48.C. R. Cho, L.F. Francis, D.L. Polla,” Ferroelectric Properties of Sol-Gel Deposited Pb(Zr,Ti)O3/LaNiO3 Thin Film on Single Crystal and Platinized-Si Substrates ”, Materials Letters,38,(1999) 125
49.C.R. Cho,” Heteroepitaxial Growth and Switching Behaviors of PZT(53/47) Films on LaNiO3-Deposited LaAlO3 and SrTiO3 Substrate”, Materials Science and Engineering ,B64,(1999) 113
50.Tao Yu, Yan-Feng Chen, Zhi-Guo Liu, Si-Bei Xiong, Li Sun, Xiao-Yuan Chen, Nai-Ben Ming,” Growth of Highly C-Axis-Oriented Pb(Zr0.53Ti0.47)O3 Thin Film on LaNiO3 Electrodes by Pulsed Laser Ablation”, Materials Letters,26,(1996) 291
51.Ming-Sen Chen, Tai-Bor Wu, and Jenn-Ming Wu,” Effect of Textured LaNiO3 Electrodes on the Fatigue Improvement of Pb(Zr0.53Ti0.47)O3 Thin Films ”, Appl. Phys.Lett.,68(10),(1996) 1430
52.Cheng-Hsiung Lin, Wen-Dung Hsu, I-Nan Lin,” Ferroelectric Properties of Pb(Zr0.52Ti0.48)O3 Thin Films Prepared by Metal-Organic Decomposition Process”, Appl Surface Science ,142,(1999) 418
53.G. Teowee, J. M. Boulton, K. McCarthy, E.K. Franke, T.P. Alexander,T.J. Bukowski, and D.R. Uhlmann,” Effect of PbO Content on the Properties of Sol- Gel Derived PZT Films”, Integrated Ferroelectrics,14,(1997) 265