本論文透過利用低壓化學氣相沉積法製備單層的二硫化鎢當作鐵電場效電晶體的通道材料，並且利用鐵電材料取代傳統的閘極介電層，做成一元件，並探討它們的鐵電特性以及量測其電性與記憶體特性。元件製作是利用乾式轉印技術將低壓化學氣相沉積法成長之二維材料以及鐵電材料利用自行配製的PDMS搭配乾式轉印機台將材料轉移至目標位置，論文中也利用兩種不同的鐵電材料進行元件的製作，分別是HZO以及CIPS，HZO的製備是與清華大學工科所巫勇賢實驗室的同學進行合作所得到，透過調整成長參數，藉此量測到其鐵電特性，量測時會先利用PUND的量測方法測試其各自的鐵電特性，最後利用電流公式去計算出它們的極化值，此量測能夠觀察到鐵電材料的反轉電壓值以及其反轉電流大小，並利用這些條件進行後的記憶體特性量測，CIPS則是透過機械剝離法轉印至矽基板上，同樣利用乾式轉印技術將二硫化鎢對準到其上方，做成一元件進行相同的電性量測以及記憶體特性量測。

This thesis uses low pressure chemical vapor deposition (LPCVD) to fabricate a monolayer WS2 as the channel material for ferroelectric field-effect transistors (FeFET), and uses ferroelectric materials to replace the traditional gate dielectric layer to make a device and discuss for the ferroelectric characteristics. And also have its electrical and memory characteristics measurement.Device use dry transfer method to transfer the WS2 grown by low pressure chemical vapor deposition and ferroelectric materials to the target position using PDMS with a dry transfer machine. And also uses two different ferroelectric materials for the device ,called HZO and CIPS.The preparation of the HZO cooperate with professor Wu's laboratory of the Institute of Engineering of National Tsing Hua University. By adjusting the growth parameters, the ferroelectricity can be measured. During the measurement, the PUND test will be used to measure their ferroelectricity , and finally the current formula will be used to calculate their polarization value. This measurement can observe the switching voltage value and the switching current of the ferroelectric material. And also use this condition to do the memory characteristic measurement. CIPS is transferred to the silicon substrate by the mechanical exfoliate method, and the WS2 is aligned on top of the CIPS by using dry transfer method to make the device.And also have the electrical measurement and memory characteristic measurement.

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