在這篇論文中，我們討論了兩個主題。第一個主題是關於三五族氮化物成長在矽基板的方位角二次諧波研究。我們以分子束磊晶成長AlN/Si(111)及GaN/AlN/Si(111)兩種結構，以RHEED(Reflection High Energy Electron Diffraction), PL（Photoluminescence spectroscopy），XRD（X-ray Diffraction）來證實磊晶薄膜的結構，藉以驗證光學二次諧波對薄膜本身及介面應力的響應。考慮來自於薄膜及介面的非線性響應，我們發現不均勻的介面應力對二次諧波的貢獻為方位角ψ的函數。因此，非線性效應可以提供非破壞性檢測並搭配製程參數檢測磊晶品質。
第二個主題是關於多晶結構之銀薄膜及銀奈米微顆粒成長在矽基板的方位角二次諧波研究。實驗發現成長於Si(111)基板的銀薄膜，以入射基頻光、反射二次諧波的不同偏振組合觀察到有不對稱的方位角二次諧波強度分佈之情形。由於矽基板具有中心對稱性的性質，二次諧波的貢獻來自於銀膜及矽基板表面，因此二次諧波強度不均的現象與不均勻的介面應力有關，而這個現象在銀薄膜經由熱褪火形成銀奈米微顆粒後，觀察方位角二次諧波的結果裡獲得證實。為了進一步觀察應力不均造成的非線性響應，我們觀察了直接以外力施加於矽基板，以及以環氧化系黏濯劑吸附在矽基板上的方位角二次諧波，發現得到相同的不對稱的二次諧波強度響應。

In this dissertation, two topics are discussed. The first part is concerning the rotational anisotropy SHG studies of the group-III nitride compound films on Si(111) substrates. The symmetry behavior of AlN/Si(111) and GaN/AlN/Si(111) structures grown by molecular beam epitaxy (MBE) have been analyzed by measuring the rotational dependence of the polarized second harmonic generation intensity for different polarized fundamental beams. The crystalline structure has also been checked by reflection high-energy electron diffraction (RHEED), X-ray diffraction and photoluminescence (PL) spectroscopy. Considering various contributions of the nonlinear response from the bulk and interfaces, the interface strain implies an nonuniform inhomogeneous intensity variation of second harmonic generation as functions of the surface azimuthal rotation angle ψ.Therefore, the observation of nonlinear optical effect provides a valuable illustration of the epitaxy quality and growth parameter characterization by a nondestructive method.
The second part is about the rotational anisotropy SHG studies of Ag thin films and nanoparticles on Si(111) substrates. The asymmetric distributions of the surface optical second harmonic generation (SHG) through azimuthally angular scans for thin silver films deposited on Si(111) wafers have been detected with different polarizations of output beams. On account of the inversion symmetry of silicon crystals, the SHG for the Ag/Si system is mainly contributed from silver film and silicon surface. In this work, we found that the interface strain implies an asymmetric intensity variation of SHG with respect to the surface azimuthal angle as an ultra thin Ag film is deposited on silicon wafers. This asymmetric behavior is prominent as the deposited silver layer is heated to change from a continuous film to granular nanoparticles. Similar change of the surface asymmetric SHG is observed for a bare Si wafer imposed with an external force or adsorbed with a drop of epoxy glue.

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