本論文將研究兩種形式的微波電漿源，分別為共振式微波電漿源(resonant type microwave plasma)和表面波電漿源(surface wave plasma source)，在實際建立電漿系統前，運用數值計算來模擬電漿系統之可行性已是現在趨勢，透過模擬結果來觀察電漿在系統中極短時間內變化更有利於了解其特性，因此本研究以數值模擬計算分析進一步探討電漿腔體與微波源耦合之特性，藉由二維軸對稱流體模型放電氣體選用氫氣，模型包括電漿理論、電磁波理論，同時考慮熱傳與流場影響。
共振式微波電漿源其應用於鑽石薄膜的合成是目前許多學界及業界所研究的領域，其中目前最主要的合成方式即為微波電漿輔助化學氣相沉積(Microwave plasma-assisted CVD, MPACVD)。表面波電漿的優點為大面積、高密度、高均勻度等，大面積晶圓製程、極短製程時間、奈米等級關鍵尺寸為目前半導體工業之趨勢，表面波電漿為理想的製程電漿源之一。
共振式微波電漿TM023-CMM-V模擬結果顯示利用隨時變之斜坡函數調整都卜勒參數，微波進入腔體後激發預期之共振模態，在基板沉積平面上方成功點起直徑約100 mm之電漿球體。提出第二電漿的問題是與腔體模態有關，共振頻率偏移是由於腔體模態所影響，若不改變頻率，電漿點起後原本腔體模態的共振頻率會偏移，因此需要找回原來腔體模態之共振頻率以解決第二電漿之問題，同時藉由操作在共振頻率能增加相同壓力下微波功率的操作範圍。
表面波電漿SW-SWP-V模擬結果顯示側壁表面波電漿腔體微波由溝槽天線耦合進介電質窗，在介電質窗表面形成駐波之表面波結構，並成功點起電漿，同時也解決了加上流場熱傳後COMSOL數值模擬軟體難以收斂的問題，在微波功率為1 kW，氫氣氣壓為30 mTorr時，電子密度約為5x1016 m-3，電漿主要區域電子溫度約為1-3 eV，進一步分析表面波電漿源之功率耦合與低氣壓下的電漿特性，表面波的形成與電磁場分佈等微波特性，探討電子密度、電漿電位、電子溫度等電漿特徵。

This thesis will study two different types of microwave plasma sources, namely, resonant microwave plasma sources and surface wave plasma sources. Before the plasma system is actually established, the feasibility of using numerical calculation to simulate the plasma system has become a current trend. Through the simulation results, the changes of the plasma in the system can be observed in a very short time, which is more conducive to understanding the characteristics of the plasma. Therefore, this study further explored the coupling characteristics between the plasma cavity and the microwave source through numerical simulation calculation analysis. Hydrogen was selected as the discharge gas by a two-dimensional axisymmetric fluid model. The model includes plasma theory and electromagnetic wave theory, and also considers heat transfer and laminar flow influences.
Resonant microwave plasma source for the synthesis of diamond film has been widely studied by many researcher and industrial. The mainly method for synthesize diamond film is microwave plasma- assisted chemical vapor deposition (MPACVD). Surface wave plasma has the benefits of large plasma area, high plasma density, and high plasma uniformity, and therefore it is an ideal plasma source of semiconductor industry pursuing large area wafer process, extremely rapid process period, and nanometer critical dimension.
The simulation results of the resonant microwave plasma TM023-CMM-V show that the Doppler parameter is adjusted by the step function that changes over time. After the microwave enters the cavity, the expected resonant mode is excited, and a diameter of about 100 mm is successfully placed above the deposition plane of the substrate.
Surface wave plasma SW-SWP-V simulation results show that microwave coupling into the dielectric window, forming the surface wave structure in the standing wave form, and the plasma ignited successfully. At the same time, also solves the problem that the COMSOL numerical simulation software is difficult to converge after adding the heat transfer in the laminar field. When the microwave power is 1 kW and the hydrogen pressure is 30 mTorr, the electron density is about 5x1016 m-3, and the electron temperature in the main plasma area is about 1-3 eV, further analyze the power coupling of the surface wave plasma source and the plasma characteristics under low pressure, the formation of the surface wave and the electromagnetic field distribution and other microwave characteristics, and discuss the plasma characteristics such as electron density, plasma potential, and electron temperature.

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