由於鐵電薄膜特有的高介電常數，電容值隨外加電場而變的調變力及低的介電損耗，故常被應用於微波調諧元件。本實驗是以鐵電薄膜做為微波調諧元件變容器，在鐵電膜材料的選擇上採用與被廣泛研究的鈦酸鍶鋇(BST)同系列之鋯鈦酸鋇(BZT)，由於BZT比起BST有較低的介電損耗，以及不差的調變力，並可藉由添加鋯，將居里溫度降至室溫以下，得到順電相。
本實驗是以磁控濺鍍技術，沉積鋯鈦酸鋇(BZT)薄膜，鋯鈦比為25/75，以Pt/Ti/SiO2/Si作為基板，再製作不同種類及厚度的金屬底電極，觀察介電性質的變化。由於多篇論文曾提及以導電氧化物電極LNO作為底電極有助於同樣為鈣鈦礦結構的鐵電材料在低溫結晶，並具有優選指向，故採用LNO薄膜來幫助BZT結晶成長，再改變金屬底電極的厚度及種類，觀察隨頻率增加，介電常數、介電損失、調變性的改變。
較厚或是導電性較好的金屬底電極，可以減少量測時所造成得誤差，所以介電損耗較低，而BZT薄膜鍍製在LNO上，可使BZT薄膜由多晶結構轉變為(001)優選指向的結構，但因為LNO熱膨脹係數較BZT大，因而產生應力變化，造成介電常數及調變性的降低。

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